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    12N80 Search Results

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    12N80 Price and Stock

    Susumu Co Ltd RG2012N-8061-W-T5

    RES SMD 8.06KOHM 0.05% 1/8W 0805
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    DigiKey RG2012N-8061-W-T5 Digi-Reel 4,996 1
    • 1 $0.88
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    RG2012N-8061-W-T5 Cut Tape 4,996 1
    • 1 $0.88
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    RG2012N-8061-W-T5 Reel 5,000
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    Mouser Electronics RG2012N-8061-W-T5 4,997
    • 1 $0.88
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    Newark RG2012N-8061-W-T5 Reel 5,000
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    IXYS Corporation IXFV12N80P

    MOSFET N-CH 800V 12A PLUS220
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    DigiKey IXFV12N80P Tube
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    JW Winco Inc 12N80A13-D

    HEAVY DUTY ADJUSTABLE LEVER
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    DigiKey 12N80A13-D Box 1
    • 1 $31.07
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    IXYS Corporation IXFC12N80P

    MOSFET N-CH 800V 7A ISOPLUS220
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    DigiKey IXFC12N80P Tube 50
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    JW Winco Inc 12N80L76-E

    HEAVY DUTY ADJUSTABLE LEVER
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    DigiKey 12N80L76-E Box 1
    • 1 $59.72
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    12N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 12N80 O-220 12N80 O-220F1 O-220F2 QW-R502-594

    12n80

    Abstract: 12N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 12N80P IXFH 12N80P IXFP 12N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 12 A 1.1 Ω 250 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 12N80P 12N80P O-263 O-247 O-220 405B2 12n80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 12N80 12N80 QW-R502-594

    "12n80"

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 12N80 12N80 QW-R502-594 "12n80"

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in


    Original
    PDF 12N80 O-220 12N80 O-220F1 QW-R502-594

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 12N80 12N80 QW-R502-594

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 12N80 12N80 12N80L-T47-T QW-R502-594

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 7 A Ω ≤ 0.93 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original
    PDF ISOPLUS220TM 12N80P E153432 -55ved

    12n80

    Abstract: "12n80"
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in


    Original
    PDF 12N80 O-220 12N80 O-220F1 O-220 QW-R502-594 "12n80"

    12n80

    Abstract: 12n80p
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 7 A ≤ 0.93 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original
    PDF ISOPLUS220TM 12N80P E153432 12n80 12n80p

    12n80

    Abstract: "12n80" PSPICE thyristor triac pspice AN3003
    Text: 12N80 12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool


    Original
    PDF FKPF12N80 O-220F FKPF12N80 O-220F-3 AN-3003: MOC3011 FKPF12N80YDTU 12n80 "12n80" PSPICE thyristor triac pspice AN3003

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2