5STP 12M6200
Abstract: 12M6500
Text: VDSM = 6500 V ITAVM = 1330 A ITRMS = 2080 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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5SYA1004-03
12M6500
12M6500
12M6200
12M5800
67xVDRM
11ing
CH-5600
5STP 12M6200
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12M6500
Abstract: abb s 212 ABB thyristor 5 5STP12M6500
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1330 A 2080 A 22000 A 1.20 V 0.600 mΩ Ω Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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12M6500
5SYA1004-03
12M6200
12M5800
CH-5600
12M6500
abb s 212
ABB thyristor 5
5STP12M6500
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12M6500
Abstract: No abstract text available
Text: Key Parameters VDSM = 6500 ITAVM = 1200 ITRMS = 1880 ITSM = 22000 VT0 = 1.20 rT = 0.600 V A A A V mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA 1004-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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Original
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PDF
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12M6500
12M6500
12M6200
12M5800
67xVDRM
CH-5600
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