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    CR10

    Abstract: M58WR032EB M58WR032ET VFBGA56
    Text: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR032ET M58WR032EB 54MHz 100ns CR10 M58WR032EB M58WR032ET VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR D1 E D 776487-2 SCALE 776487-4 776487-3 2:1 SCALE SCALE 2:1 2:1 DESCRIPTION DATE DWN APVD REVISED PER ECO-11-005294 30APR2011 RK HMR REVISED PER ECO-13-019168


    Original     		PDF ECO-13-019168 05DEC2013 30APR2011 ECO-11-005294 12DEC2002 16DEC2002