Untitled
Abstract: No abstract text available
Text: ila H M C 151 MICROWAVE CORPORATION PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 1 - 4 GHz FEBRUARY 1998 Features General Description GAIN: 12dBtyp. The HMC151 is an amplifier with gain con trolled with a 5 bit binary word. The magni tude of the voltage gain varies linearly with
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12dBtyp.
HMC151
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pa 2030a
Abstract: J1 3007-1 120C 2SC4365 IS211 2T transistor surface mount transistor et 454 I PT 0 0 7N 0 6 N
Text: SANYO SEMI CONDUCTOR CORP 2 2E D • 7^70713 O ODb ö b l Û T-3N7 2SC4365 * 2018A 3007 Features • Low-voltage operation N P N Epitaxial Planar Silicon Transistor V/U M IX, OSC, Low-Voltage High-Frequency Amp Applications fT=3.0GHz typ V oe = 3V MAG=12dBtyp (VCE=3V,Ic=10mA)
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2SC4365
12dBtyp
pa 2030a
J1 3007-1
120C
2SC4365
IS211
2T transistor surface mount
transistor et 454
I PT 0 0 7N 0 6 N
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2SK653
Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s
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2SK648
2SK649
2SK650
2SK651
150ni
2SK652
2SK665
50MHz
2SK666
2SK765
2SK653
2SK671
Gv-80dB
2SK674
2SK669
2SK677
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FLM6472-12D
Abstract: FLM4450-4B/D FLM3742-12D FLM6472-8C FLM3742-4B FLM4450-25D FLM7177-4C FLM6472-4C FLM5964 FLM5964-14/D
Text: - 136 - & a £ tt € ffl iÉ m ís A ñ * K V * té £ 1 (V) (A) M V P d/P ch * I gss (max) (A) « Vg s (V) (Ta=25cC ) (min) (raax) Vd s (A) (V) (A) (rain) (max) Vd s (V) (V) (V) Id (A) (rain) (S) Vd s (V) Id (A) FLM3742-12D a ± ii C-Band PA GaAs N D
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FLM3742-12D
FLM3742-14/D
FLM3742-25D
FLM3742-4B/D
FLM3742-8B/D
FLM4450-12D
GaAs-14/D
44dBm,
FLM6472-25D
36dBm,
FLM6472-12D
FLM4450-4B/D
FLM3742-12D
FLM6472-8C
FLM3742-4B
FLM4450-25D
FLM7177-4C
FLM6472-4C
FLM5964
FLM5964-14/D
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NEc hemt
Abstract: 2SK1953 2SK1963 2SK2043 2SK1951 2SK1952 2SK1954 2SK1958 2SK1959 2SK1960
Text: - 126 - H f m £ ít % m m « it i A A 5È 1 K V m * * * (V) « fér , R, L (A) * :t * less (max) (A) (W) Vg s (V) (min) (A) SE W (Ta=25‘ C) (min) (max) V d s (V) (V) (V) (max) Vd s (A) (V) (min) (S) (t$ Id (A) Vd s ’ (V) Id (A) 2SK1951 B Ì 'HS PSW, DDC
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2SK1951
2SK1952
2SK1953
2SK1954,
1954-Z
2SK195T
90nstyp
2SK1991
2SK1992
NEc hemt
2SK1963
2SK2043
2SK1954
2SK1958
2SK1959
2SK1960
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2SK565
Abstract: 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544
Text: - 54 - m e tt ÌÈ. £ m & f y * 1 % K ft X £ P d/ Pc h E ft * V MOS N E 900 DSX ±20 2SK539 SW Reg MOS N 900 DSX ±20 IF J ND 12 D S X -15 S ±20 s a 2SK542 NEC i 2SK543 2SK544 2SK545 - f t 2SK546 LN A , t ' f *i*7 SW MOS N E F M Tuner, V H F RF MOS
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2SK538
2SK539
ZSK541
2SK542
2SK543
2SK556
2SK557
2SK559
2SK560
2SK622
2SK565
2SK541
2SK566
2SK569
2SK561
2SK564
2SK549
2SK572
2SK538
2SK544
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FLR024FH
Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D
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FLM7785-8C/D
FLM8596-4C
FLM8596-8C
FLR014FH
FLR014XP
FLC311MG-4
FLS31ME
36dBm,
FLS50
FLR024FH
FLX102MH-12
flx202mh-12
FLS09ME
FLS09
FLR016XP
FLR014FH
FSC10FA
FLR056XV
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FLL101ME
Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)
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FLK202MH-14
FLK202XV
FLL10ME
FLL17MB
FLL35ME
GaLM1011-8D
FLM1112-4C
FLM1213-4C
FLM1213-4D
FLM1213-8C
FLL101ME
FLL100MK
FLL171ME
FLM1414-4C
fll171
FLM0910-8C
FLK202MH-14 PA
FLM1011-4C
FLK202MH-14
FLM0910-4C
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pa68h
Abstract: YTFP150 PA63H NEC PA63H UPA33A YTF840 YTFP450 UPA50A PA71A pamt
Text: - 170 - f £ € tt £ m & m it vm * 1 ft h' V $ Vg s * m * fë I* _ P /P (A) * £ X (V) X fr* d r ch (W) (max) (A) Vg s (V) î£ Rî W s (min) (max) V d s (A) (V) (A) (Ta=25*C) « (min) (max) Vd s (V) (V) (V) Id (A) gm (min) (S) Vds (V) Id (A) YTF840
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40mVmax
400MHz
10niA,
ZPA503T
PA502T
12dBtyp
60mVmax
106nstyp
180nstyp
pa68h
YTFP150
PA63H
NEC PA63H
UPA33A
YTF840
YTFP450
UPA50A
PA71A
pamt
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2SK1001
Abstract: 2SK1002 2SK918 2SK990 2SK994 2SK1000 2SK962 2SK976 2SK987 2SK989
Text: - 78 - f m s tt £ m m m ^ * K 2SK962 £: ft V* V fe i* * (V) ft * (A) M S X P d /P c h ft * (W) (¿E? (A) Vg s (V) W s wiy (A) (min) (max) Vd s (V) (V) (V) sm (min) Vd s (S) {\ l f (V) 1d (A) SW-Reg, USP, DDC MOS N E 900 DSS ±30 S 8 D 2SK963 n r DDC, Motor-D
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2SK962
2SK963
2SK968
2SK970
2SK971
220nstyp
2SK992
230nstyp
2SK993
2SK1001
2SK1002
2SK918
2SK990
2SK994
2SK1000
2SK962
2SK976
2SK987
2SK989
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2SK131
Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Text: - 34 - f m ít % m £ m A i fr K V Eft * fê Ê * 1 ft * (V) (A) % S ft* P d/ P c h (W) Ig s s (max) (A) Vg s (V) W (min) (max) V d s (A) (A) (V) 4# tt (Ta=25eC ) Id (min) (max) V d s (V) (V) (V) (A) (min) (typ) V d s (S) (S) (V) 2SK128 föT LF LN A }
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2SK130
2SK130A
2SK131
25/CH
2SK132
20mVniax
VDS-10V.
2SJ73
2SK146
10dBmax
2SJ72
2SK146
2SJ49 2sk134
2SK151
2SK150
2SK160
2SK150 A
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RF-45
Abstract: No abstract text available
Text: •m l 1.5 11.9 GHz Band Chip Multilayer D.B.MIXER Model No. SLM-170A Equivalent Circuits Shape & Size 3.2 2.0 0.95 0.95 K >K >l ixers [Hl 1 RF LO 2 Ground 3 IF in T I— r 4 Ground 5 Ground 6 4 5 6 Top View >H-t— 0.4 LO(RF) — ♦— K - 0.4 0.4 Side View
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SLM-170A
1400-1900MHz
1400-2000MHZ
400MHz
12dBTyp.
13dBm
-10dBm
80MHz
RF-45
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Untitled
Abstract: No abstract text available
Text: Audio ICs High-definition sound processor BA3888S The BA3888S is a sound processor 1C that performs phase and harmonic compensation on audio signals to accu rately reproduce the “rise” section of audio signals that determines the characteristics of the sound, and thus repro
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BA3888S
BA3888S
PIN16
FIN17
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