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    1299 MOSFET Search Results

    1299 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1299 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dc to dc buck converter 200A

    Abstract: push-pull converter 80V output C1206223K5RAC SLF12575-100M5R4 PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES CMPD2838-NSA 1299 mosfet SM76925 current fed push pull topology C2012X7R1H104K
    Text: National Semiconductor Application Note 1299 Grant Smith March 2004 Introduction by a push-pull isolation stage that also provides voltage reduction in the transformer. The buck stage is synchronous, the upper and lower Mosfets are both N-channel, which are


    Original     		PDF LM5101 LM5041, AN-1299 dc to dc buck converter 200A push-pull converter 80V output C1206223K5RAC SLF12575-100M5R4 PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES CMPD2838-NSA 1299 mosfet SM76925 current fed push pull topology C2012X7R1H104K

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA074A – May 2004 – Revised May 2013 AN-1299 LM5041 Evaluation Board 1 Introduction The LM5041 evaluation board is designed to provide the design engineer with a fully functional current fed push-pull power converter to evaluate the LM5041 controller, and also the LM5101 buck stage gate driver,


    Original     		PDF SNVA074A AN-1299 LM5041 LM5101

    WPC8763L

    Abstract: ATI M64-M QUANTA GD1 C3157 PCI8402 SAMSUNG GDDR3 quanta Neo c480 l3007 cps psi 100u 1p0
    Text: 1 2 3 4 5 1 CPU MEROM GD1 Block Diagram 478 PIN micro FC-PGA P3,4 14.318MHz A A FSB 667 MHz(166X4) FSB 800 MHz(200X4) CLOCK GEN SVideo Out S-Video 32MVRAM 32bits P34 P10 S-Video LCD LVDS P7 CRT R/G/B 32bits P10 ICS9LPR363 P2 P11 LVDS 1299 Ball (micro FCBGA)


    Original     		PDF 318MHz 166X4) 200X4) 32MVRAM 32bits ICS9LPR363 16Lanes P31-35 WPC8763L ATI M64-M QUANTA GD1 C3157 PCI8402 SAMSUNG GDDR3 quanta Neo c480 l3007 cps psi 100u 1p0

    APT50M80JLC

    Abstract: No abstract text available
    Text: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT50M80JLC OT-227 APT50M80JLC

    ed 77A DIODE

    Abstract: APT50M50JLC 77A DIODE ed 77A
    Text: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT50M50JLC OT-227 ed 77A DIODE APT50M50JLC 77A DIODE ed 77A

    APT10050JLC

    Abstract: No abstract text available
    Text: APT10050JLC 1000V POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT10050JLC OT-227 Volt87) MIL-STD-750 APT10050JLC

    Untitled

    Abstract: No abstract text available
    Text: APT10025JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is


    Original     		PDF APT10025JFLC OT-227 APT10025JF

    Untitled

    Abstract: No abstract text available
    Text: APT10050JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is


    Original     		PDF APT10050JFLC OT-227 APT10050JF

    Untitled

    Abstract: No abstract text available
    Text: APT5010JFLC 500V POWER MOS VITM 44A 0.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5010JFLC OT-227

    APT50M80

    Abstract: APT50M80B2LC APT50M80LLC
    Text: APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT50M80B2LC APT50M80LLC O-264 O-264 APT50M80 O-247 APT50M80 APT50M80B2LC APT50M80LLC

    Untitled

    Abstract: No abstract text available
    Text: APT50M50JFLC 500V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is


    Original     		PDF APT50M50JFLC OT-227 APT50M50JFL

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2FLC APT5010LFLC 500V 47A 0.100W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5010B2FLC APT5010LFLC O-264 O-264 O-247

    050590

    Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
    Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VFR APT10040LVFR O-264 O-264 APT10040 FO810 MIL-STD-750 050590 APT10040B2 APT10040B2VFR APT10040LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011LVFR O-264 O-264

    APT5010JLC

    Abstract: No abstract text available
    Text: APT5010JLC 44A 0.100 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5010JLC OT-227 APT5010JLC

    050590

    Abstract: APT10040B2VR APT10040LVR
    Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 050590 APT10040B2VR APT10040LVR

    Untitled

    Abstract: No abstract text available
    Text: APT50M80JFLC 500V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is


    Original     		PDF APT50M80JFLC OT-227 APT50M80JFL

    Untitled

    Abstract: No abstract text available
    Text: APT50M80B2FLC APT50M80LFLC 500V 58A 0.080W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT50M80B2FLC APT50M80LFLC O-264 O-264 O-247

    APT10050L

    Abstract: No abstract text available
    Text: APT10050B2FLC APT10050LFLC 1000V 21A 0.500W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT10050B2FLC APT10050LFLC O-264 O-264 O-247 APT10050L

    amp mosfet schematic circuit

    Abstract: schematic bluetooth headset 10mhz mosfet HP-3310A 100MHz high-frequency generator sweep generator mosfet amp ic bluetooth antenna AN1299 bluetooth headset
    Text: Measuring RF Interference in Audio Circuits Application Note March 28, 2007 AN1299.0 Introduction Test Results The proliferation of wireless transceivers in portable applications has led to increased attention to an electronic circuits’ ability to operate in the vicinity of high frequency


    Original     		PDF AN1299 amp mosfet schematic circuit schematic bluetooth headset 10mhz mosfet HP-3310A 100MHz high-frequency generator sweep generator mosfet amp ic bluetooth antenna bluetooth headset

    Si7453DP

    Abstract: 1299 mosfet
    Text: SPICE Device Model Si7453DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7453DP 0-to-10V 20-Mar-03 1299 mosfet

    XP131A1520SR

    Abstract: No abstract text available
    Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.02Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP131A1520SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP131A1520SR XP131A1520SR

    Marquardt 1298

    Abstract: marquardt power switch 2701 2709.5101 Marquardt Switches 2504 2504.0301 Marquardt 1299 Marquardt Switches 1298 1267.7121 marquardt power switch 2709 2602
    Text: POWER TOOL SWITCHES VARIETY. QUALITY. INNOVATION POWER TOOL SWITCHES BY MARQUARDT THE PROGRAM This catalog covers our wide range of power tool switches. The standard versions are listed with their part numbers. Sample switches and installation drawings with tolerance specifications are available


    Original     		PDF

    Si7453DP

    Abstract: si7453
    Text: SPICE Device Model Si7453DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7453DP 0-to-10V 18-Jul-08 si7453