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    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE DDR3 SDRam 128Mx32-BGA 3D3D4G32YB2495 DDR3 Synchronous Dynamic Ram 4Gbit DDR3 SDRam organized as 128Mx32 Pin Assignment Top View BGA 136 (Pitch : 0.80 mm) Main applications: •     Embedded Systems Workstations Servers Super Computers


    Original     		PDF 128Mx32-BGA 3D3D4G32YB2495 128Mx32 3DFP-0495-REV

    MR36V04G54S

    Abstract: No abstract text available
    Text: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply


    Original     		PDF FEDR36V04G54S-002-01 MR36V04G54S MR36V04G54S

    Untitled

    Abstract: No abstract text available
    Text: SG532288FG8NWUU October 5, 2007 Ordering Information Part Numbers Description Module Speed SG532288FG8NWDB 128Mx32 512MB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant).


    Original     		PDF SG532288FG8NWUU SG532288FG8NWDB 128Mx32 512MB) 200-pin 128Mx8 DDR2-400-333, PC2-3200 SG532288FG8NWDG

    Untitled

    Abstract: No abstract text available
    Text: SG532283FG8NWUU Preliminary Ordering Information Part Numbers Description Module Speed SG532283FG8NWDB 128Mx32 512MB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0


    Original     		PDF SG532283FG8NWUU SG532283FG8NWDB 128Mx32 512MB) 200-pin 64Mx16 DDR2-400-333, PC2-3200 SG532283FG8NWDG

    Untitled

    Abstract: No abstract text available
    Text: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply


    Original     		PDF FEDR36V04G54B-002-01 MR36V04G54B

    Untitled

    Abstract: No abstract text available
    Text: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word  32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply


    Original     		PDF FEDR36V04G54S-002-01 MR36V04G54S D31/A-1 128Mx32 256Mx16-bit 32-Bit 16-word 16-Bit

    Untitled

    Abstract: No abstract text available
    Text: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word  32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply


    Original     		PDF FEDR36V04G54B-002-01 MR36V04G54B D31/A-1 128Mx32 256Mx16-bit 32-Bit 16-word 16-Bit

    Untitled

    Abstract: No abstract text available
    Text: FEDR36V04G54S-002-01 Issue Date: Aug. , 2009 MR36V04G54S 128M–Word  32–Bit Page Mode P2ROM FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply ·Random Access time


    Original     		PDF FEDR36V04G54S-002-01 MR36V04G54S

    Untitled

    Abstract: No abstract text available
    Text: SU5322885D8F0CL January 17, 2005 Ordering Information Part Numbers Description Module Speed SM5322885D8F0CL 128Mx32 512MB , DDR, 100-pin DIMM, Unbuffered, 64Mx8 Based, Non-ECC, DDR333B, 30.48mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5322885D8F0CL 128Mx32 (512MB), DDR, 100-pin DIMM, Unbuffered, 64Mx8


    Original     		PDF SU5322885D8F0CL SM5322885D8F0CL SB5322885D8F0CL 128Mx32 512MB) 100-pin 64Mx8 DDR333B,

    Untitled

    Abstract: No abstract text available
    Text: SU5322885D8F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5322885D8F0CG 128Mx32 512MB , DDR, 100-pin DIMM, Unbuffered, 64Mx8 Based, Non-ECC, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5322885D8F0CG 128Mx32 (512MB), DDR, 100-pin DIMM, Unbuffered, 64Mx8


    Original     		PDF SU5322885D8F0CU SM5322885D8F0CG SB5322885D8F0CG 128Mx32 512MB) 100-pin 64Mx8 DDR266A,

    H5GQ4H24MFR-R2C

    Abstract: H5GQ2H24AFR-R0C H5GC4H24MFR-T2C H5GQ1H24BFR-R0C H5GQ1H24BFR-T2C H5GC2H24BFR-T2C H5TQ2G63DFR-11c H5GQ2H24AFR-T2C H5TC4G63AFR-11C H5TQ2G63FFR
    Text: Page 1 DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.1GHz 0.9ns H5TQ4G63AFR-N1C FBGA(96ball) 8Bank, 1.5V/ 1.5V Now 1.0GHz (1.0ns) H5TC4G63AFR-N0C FBGA(96ball) 8Bank, 1.35V/ 1.35V Now FBGA(96ball) 8Bank, 1.5V/ 1.5V Now FBGA(96ball) 8Bank, 1.35V/ 1.35V


    Original     		PDF H5TQ4G63AFR-N1C 96ball) H5TC4G63AFR-N0C 256Mx16 H5TC4G63AFR-11C 900MHz H5GQ4H24MFR-R2C H5GQ2H24AFR-R0C H5GC4H24MFR-T2C H5GQ1H24BFR-R0C H5GQ1H24BFR-T2C H5GC2H24BFR-T2C H5TQ2G63DFR-11c H5GQ2H24AFR-T2C H5TC4G63AFR-11C H5TQ2G63FFR

    Untitled

    Abstract: No abstract text available
    Text: SM57228457HE83R01 July 3, 2002 Orderable Part Numbers Module Part Number SM57228457HE83R01 Description 128Mx72 1GB , SDRAM, 168-pin DIMM Registered, 128Mx4 (Stacked- two 64Mx4) Based, CL=4 (Device =3), PC133, 30.48mm. Revision History • July 3, 2002 Modified mechanical drawing on page 11.


    Original     		PDF SM57228457HE83R01 SM57228457HE83R01 128Mx72 168-pin 128Mx4 64Mx4) PC133,

    FBGA DDR3 x32

    Abstract: "DDR3 SDRAM" MCP DDR3 CKE01 128Mx32 W3J64M72G-XSBX zq transistor DDR2 128M x 32 intel 3601 ddr3 udqs
    Text: 512MByte DDR3 SDRAM 4 Gbit The W3J64M64G-XSBX, W3J64M72G-XSBX, W3J128M32G-XSBX, and W3J2128M16G-XSBX are the introductory devices of WEDC’s high density/high performance family of DDR3 SDRAM’s designed to support high performance processors, and chipsets


    Original     		PDF 512MByte W3J64M64G-XSBX, W3J64M72G-XSBX, W3J128M32G-XSBX, W3J2128M16G-XSBX 352mm2 2x128Mx16 DQ0-63 DQ0-15 FBGA DDR3 x32 "DDR3 SDRAM" MCP DDR3 CKE01 128Mx32 W3J64M72G-XSBX zq transistor DDR2 128M x 32 intel 3601 ddr3 udqs

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    Untitled

    Abstract: No abstract text available
    Text: SM572284578E8UP01 July 3, 2002 Orderable Part Numbers Module Part Number Description SM572284578E8BP01 128Mx72 1GB , SDRAM, 168-pin DIMM Registered, 128Mx4 ( Stacked- two 64Mx4) Based, CL= 2 & 3, PC100, 30.48mm SM572284578E83P01 128Mx72 (1GB), SDRAM, 168-pin DIMM Registered, 128Mx4


    Original     		PDF SM572284578E8UP01 SM572284578E8BP01 SM572284578E83P01 128Mx72 168-pin 128Mx4 64Mx4) PC100,

    Untitled

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    K4G41325FC

    Abstract: K4G41325F samsung GDDR5 K4G10325FG-HC03 gddr5 samsung K4W4G1646 256MX16 K4G20325FD
    Text: Nov. 2012 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF K4W2G1646E BC1A/11 K4W4G1646B A/11/12 K4J10324KG HC1A/14 32Mx32 8K/32ms K4G10325FG HC03/04/05 K4G41325FC K4G41325F samsung GDDR5 K4G10325FG-HC03 gddr5 samsung K4W4G1646 256MX16 K4G20325FD

    Untitled

    Abstract: No abstract text available
    Text: SM572284578E83R01 July 3, 2002 Orderable Part Numbers Module Part Number SM572284578E83R01 Description 128Mx72 1GB , SDRAM, 168-pin DIMM Registered, 128Mx4 ( Stacked- two 64Mx4) Based, CL=4 (Device =3), PC133, 30.48mm Revision History • July 3, 2002 Modified mechanical drawing on page 11.


    Original     		PDF SM572284578E83R01 SM572284578E83R01 128Mx72 168-pin 128Mx4 64Mx4) PC133, page11.

    256Mx16

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF FEDR36V04G54B-002-01 MR36V04G54B 256Mx16

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe