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    128KX8 EEPROM Search Results

    128KX8 EEPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MR28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, CQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    MD28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM27C010-70DI Rochester Electronics UVPROM, 128KX8, 70ns, CMOS, CDIP32, WINDOWED, CERAMIC, DIP-32 Visit Rochester Electronics Buy
    AM27C010-55PC Rochester Electronics LLC OTP ROM, 128KX8, 55ns, CMOS, PDIP32, PLASTIC, DIP-32 Visit Rochester Electronics LLC Buy
    TN28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, PQCC32, 0.450 X 0.550 INCH, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy

    128KX8 EEPROM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Extended Temperature, 5 Volt, 1 Megabit EEPROM TT28HT010 DESCRIPTION: The TT28HT010F/G/K/N memory contains a 128Kx8 EEPROMs, packaged in a hermetically sealed cermaic package, making the modules suitable for commercial, industrial military and extended temperature


    Original     		TT28HT010 TT28HT010F/G/K/N 128Kx8 256-Byte 19us/Byte 128Kx8 250ns 200oC 40A048-00 PDF

    WME128K8-XXX

    Abstract: No abstract text available
    Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP


    Original     		WME128K8-XXX 128Kx8 300ns MIL-STD-883 120ns 06HYX 01HXX 250ns 02HXX WME128K8-XXX PDF

    WME128K8-XXX

    Abstract: No abstract text available
    Text: WME128K8-XXX White Electronic Designs 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES „ Read Access Times of 125, 140, 150, 200, 250, 300ns „ JEDEC Approved Packages „ Automatic Page Write Operation • Internal Address and Data Latches for 128 Bytes


    Original     		WME128K8-XXX 128Kx8 300ns MIL-STD-883 150ns 04HYX 140ns 05HYX 01HXX WME128K8-XXX PDF

    TDB 0156

    Abstract: a/TDB 0156
    Text: WME128K8-XXXE WHITE ELECTRONIC DESIGNS CORPORATION 128Kx8 CMOS MONOLITHIC EEPROM ADVANCED* FEATURES FIG. 1 • Access Times of 150, 200, 250, 300ns ■ JEDEC Approved Packages • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ce.ramic, 0.400" SOJ (Package 101)


    Original     		WME128K8-XXXE 128Kx8 300ns 128Kx8. MIL-STD-883 TDB 0156 a/TDB 0156 PDF

    ACU51

    Abstract: EEPROM128KX8 128KX8
    Text: New Product Release Advanced Control Unit ACU ACU51 Block EEPROM 128Kx8 Four 8-Bit Parallel Ports Power Control Two Synch. Serial Ports Four Asynch. Serial Ports Digital Interface and Control Specifications Features • Size and Weight: 1.0” x 1.4” x 0.12”, 3 grams


    Original     		ACU51 128Kx8 8051-based, 12-bit 10-bit 16-bit RS-232, ACU51 EEPROM128KX8 128KX8 PDF

    WME128K8-XXX

    Abstract: No abstract text available
    Text: WHITE ELECTRONIC DESIGNS CORPORATION WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns ■ JEDEC Approved Packages • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)


    Original     		WME128K8-XXX 128Kx8 300ns MIL-STD-883 140ns 05HYX 120ns 06HYX 01HXX WME128K8-XXX PDF

    1011541

    Abstract: No abstract text available
    Text: I 512kx8bitEEPROM-Radiation Hardened 7 t Q w ^ v n w V i n H w P 128 k x 8 P I V I M CM EEPROM M em ory For Space Applications SeI's 79C040RP RP WE ~ ~ CE- for RAD-PAK multiA».chip module (MCM) memory features a mini­ 128Kx8 128Kx8 128Kx8 128Kx8 mum 100 kilorad (Si) to­


    OCR Scan     		512kx8bitEEPROM-Radiation 79C040RP 128Kx8 79C040RP 512-kilobyte 1011541 PDF

    32Kx16

    Abstract: Intel EEPROM 32kx8
    Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4


    OCR Scan     		32Kx8 64KX8 32KX16 128KX8 64KX16 32KX32 64KX32 512KX8 256KX16 Intel EEPROM 32kx8 PDF

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp


    OCR Scan     		LH6N10/LH6N11 LH6N10/11 128KX8) LH6N10 LH6N11 LH6N10/LH6N11 100ns 32-pin PDF

    48-PIN

    Abstract: No abstract text available
    Text: REFERENCE SIZE SRAM 1 M egabit PART NUMBER 3 M egabit SPEED ns PACKAGE 128Kx8 7 0 ", 85, 100, 120, 150 32-Pin D IP 32-Pin F LA T P A C 15 128Kx8, 64Kx16, 32Kx32 25, 35, 45, 55, 70 66-Pin P G A 23 2 0 *, 25, 30, 35, 45 48-Pin SLC C 48-Pin ° r Lead 48-Pin y Lead


    OCR Scan     		PS128M PS3232V DPS128X16CJ3/BJ3 PS128X16CH DPS128X16Y3 PS128X16H PS128X24BH PS512S8BN PS512S8N 48-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI5M32128C 128Kx32 EEPROM ELECTRONIC 0ESX5N& N C 128Kx32 CMOS EEPROM Module Features 128Kx32 bit CMOS The EDI5M32128C is a high speed, high performance, our megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8 EEPROMs surface


    OCR Scan     		128Kx32 200ns EDI5M32128C EDI5M32128C 128Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module The ED17F81024C isa5V-0nly In-System Programmable and Erasable Read Only Memory Module. raiuiiosMCT Features Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­


    OCR Scan     		EDI7F81024C ED17F81024C 128Kx8 150ns EDI7F81024C A17-A19 323D114 EDI7F81024C120BSC EDI7F81024C150BSC PDF

    A17A18

    Abstract: No abstract text available
    Text: EDI7F8512C Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features and Erasable Read Only Memory Module. Organized as 512Kx8 bit CMOS Flash Electrically Erasable Programmable 512Kx8 bits, the module contains four 128Kx8 Flash Memo­


    OCR Scan     		EDI7F8512C 512Kx8 EDI7F8512C 128Kx8 Configurat0-A16 A17-A18 EDI7F8512C120BSC A17A18 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash


    OCR Scan     		EDI7F82048C EDI7F82048C 128Kx8 A17-A20 Q01fl34 EDI7F82048C120BSC EDI7F82048C150BSC EDI7F82048C200BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­


    OCR Scan     		EDI7F8512C 512Kx8 EDI7F8512C 128Kx8 3E30114 EDI7F8512C120BSC EDI7F8512C150BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­


    OCR Scan     		EDI7F81024C ED17F81024C 128Kx8 EDI7F81024C A17-A19 3D114 01fl23 EDI7F81024C120BSC EDI7F81024C150BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI5M32128C ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128KX32 CMOS EEPROM Module ] gi II Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8


    OCR Scan     		EDI5M32128C 128KX32 EDI5M32128C 128Kx8 sp5M32128C150GM EDI5M32128C200GM EDI5M32128C120GB EDI5M32128C150GB EDI5M32128C200GB PDF

    Untitled

    Abstract: No abstract text available
    Text: 32KX32 EEPROM MODULE ADVANCED FEATURES • Access times of 120,150, 200ns • Built in decoupling caps for low noise operation • Organized as 32Kx32; User configurable as 64Kxl6 or 128Kx8 • Operation with single 5 volt supply • Low power CMOS • TTL Compatible Inputs and Outputs


    OCR Scan     		32KX32 200ns 32Kx32; 64Kxl6 128Kx8 AS7E32K32 32Kx32-bits 128Kx8. AS27C256 AS7E32K32P25M PDF

    Untitled

    Abstract: No abstract text available
    Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8


    OCR Scan     		EDI5M32128C 128Kx32 EDI5M32128C 128Kx8 1b-10 020x45Â PDF

    Untitled

    Abstract: No abstract text available
    Text: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300


    OCR Scan     		WME128K8-XXX 128Kx8 300nS MIL-STD-883 Cycl250nS 128Kx 200nS 03HYX 150nS PDF

    j3a11

    Abstract: No abstract text available
    Text: MD\ EDI7F32256C ELECTRONIC DESIGNS INC. « High Performance Eight Megabit Flash EEPROM 256Kx32 CMOS Flash EEPROM Module Features The EDI7F32256C is a 5V-0nly In-System Program­ mable and Erasable Read Only Memory Module. Orga­ nized as 256Kx32 bits, the module contains eight 128Kx8


    OCR Scan     		EDI7F32256C 256KX32 150ns EDI7F32256C 128Kx8 j3a11 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. • High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The EDI7F81024C is a 5V-0nly In-System Program­ mable and Erasable Read Only Memory Module. Orga­ nized as 1Megx8 bits, the module contains eight 128Kx8


    OCR Scan     		EDI7F81024C EDI7F81024C 128Kx8 A0-A19 EDI7F81024C120BSC EDI7F81024C150BSC EDI7F81024C200BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM Dense-Pac Microsystems, Inc. DPE51288 128KX8 CMOS EEPROM MODULE O D ESC RIPTIO N : The DPE51288 is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPRO M module organized as 128K X 8. The DPE51288 is pin compatable with


    OCR Scan     		DPE51288 128KX8 DPE51288 64-Bytes 500mV PDF