L7C108WC25
Abstract: MT5C1008 l7c109wi25
Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology
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L7C108/109
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
L7C108WC25
MT5C1008
l7c109wi25
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PDF
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Untitled
Abstract: No abstract text available
Text: FT71024 CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM Military (–55°C to +125°C) Equal access and cycle times military: 20ns The FT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. Using high-performance CMOS technology
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FT71024
300mil)
576-bit
200mV
400-mil
SO32-3)
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PDF
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cmos vs ttl
Abstract: STK25CA8
Text: STK25CA8 128K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Module FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 128K x 8 Static RAM, BatteryBacked RAM or EEPROM • 35ns and 45ns Access Times
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Original
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STK25CA8
200ns
100-Year
32-Pin
STK25CA8
cmos vs ttl
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PDF
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SO32
Abstract: IDT71V124 IDT71V124SA
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise
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Original
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IDT71V124SA
9/10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
200mV
71V124
300-mil
SO32
IDT71V124SA
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PDF
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IDT71V124
Abstract: IDT71V124SA
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise
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Original
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
200mV
71V124
IDT71V124SA
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05131 Spec Title: CY7C1018CV33 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra pras Replaced by: NONE CY7C1018CV33 128K x 8 Static RAM Features • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns
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CY7C1018CV33
CY7C1018CV33
CY7C1018BV33
300-mil-wide
32-pin
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PDF
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SO32-3
Abstract: IDT71V124 IDT71V124SA SO32-2
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times
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Original
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
200mV
71V124
SO32-3
IDT71V124SA
SO32-2
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05038 Spec Title: CY7C109B, CY7C1009B 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra PRAS Replaced by: NONE CY7C109B CY7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109B/CY7C1009B is a high-performance CMOS
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Original
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CY7C109B,
CY7C1009B
CY7C109B
CY7C1009B
400-mil-wide
32-pin
300-mil-wide
CY7C109B/CY7C1009B
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PDF
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IDT71V124
Abstract: IDT71V124SA
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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Original
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
IDT71V124
576-bit
IDT71V124SA
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PDF
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Untitled
Abstract: No abstract text available
Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial: 12/15/20ns
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IDT71124
12/15/20ns
15/20ns
32-pin
IDT71124
576-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 MEGABIT 128K x 8-BIT CMOS STATIC RAM PLASTIC SIP MODULE i d ï 8MP824S FEATURES: DESCRIPTION: • High-density 1024K (128K x 8) CMOS static RAM module The IDT8MP824S is a1024K (131,072 x 8-bit) high-speed static RAM constructed on an epoxy laminate substrate using four
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OCR Scan
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8MP824S
1024K
IDT8MP824S
a1024K
IDT71256
8MP824
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 MEGABIT 128K x 8 REGISTERED/BUFFERED/ LATCHED CMOS STATIC RAM SUBSYSTEMS IDT7M824 FAMILY FEATURES: DESCRIPTION: • High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and l/Os The IDT7M824 fam ily is a set of 1024K-bit (128K x 8-bit) high
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OCR Scan
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1024K-bit
-15mA
64-pin,
IDT49C802
IDT49C802
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PDF
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AL4A
Abstract: No abstract text available
Text: Jdt 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise.
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OCR Scan
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IDT71V124
12/15/20ns
Plastic32-pin
32-pin
IDT71V124
576-bit
71V124
400-mil
S032-3)
AL4A
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PDF
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Untitled
Abstract: No abstract text available
Text: Jdt Integrated Device Technology, Inc. 3.3V CMOS STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise
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OCR Scan
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
71V124
300-m
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PDF
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TL 1838
Abstract: No abstract text available
Text: 128K x 32 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module The CYM1838 is a very high perform ance 4-megabit static R A M m odule organized as 128K words by 32 bits. T he m odule is constructed using four 128K x 8 static
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OCR Scan
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CYM1838
66-pin,
1838H
66-Pin
TL 1838
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PDF
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71v124
Abstract: No abstract text available
Text: Î:]Â Nn\ 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for
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OCR Scan
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IDT71V124
12/15/20ns
32-pin
IDT71V124
576-bit
200mV
4A25771
0022Sfl2
71V124
71v124
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PDF
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S0323
Abstract: S0324
Text: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times
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OCR Scan
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9/10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124SA
IDT71V124
576-bit
200mV
71V124
300-mil
S0323
S0324
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PDF
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S0323
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times
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OCR Scan
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9/10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124SA
IDT71V124
576-bit
200mV
71V124
300-mil
S0323
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PDF
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s0324
Abstract: No abstract text available
Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.
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OCR Scan
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IDT71V124
12/15/20ns
Plastic32-pin
32-pin
IDT71V124
576-bit
71V124
400-mil
S032-3)
s0324
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PDF
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024-S
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 1 MEG 128K x 8-BIT PRELIMINARY IDT71B024 Integrated Device Technology, Inc. FEATURES: • 128K x 8 Advanced High-Speed BiCMOS Static RAM • Equal access and cycle times — Commercial: 15/17ns • Two Chip Selects plus one Output Enable pin
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OCR Scan
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IDT71B024
15/17ns
32-pin
IDT71B024
576-bit
IDT71BOE
71B024
400-m
P32-3)
024-S
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PDF
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Untitled
Abstract: No abstract text available
Text: jjjm ÆmSmmkjjjjjj jmSSm L 7 C 1 0 8 /1 0 9 128K x 8 Static RAM Low Power mm MMMM DEVICES INCORPORATED DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology
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OCR Scan
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MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
L7C109WC15*
L7C109WC12*
L7C109WC10*
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PDF
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Untitled
Abstract: No abstract text available
Text: IDT71M024 IDT71M025 128K x 8 CMOS STATIC RAM In teg rated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 1 megabit 128K x 8 static RAM • Dual Chip Select Version (ID T71M 024) Single Chip Select Version (ID T71M 025) • Fast access time:
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OCR Scan
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IDT71M024
IDT71M025
100mA
32-pin
024/71M
IDT71M024/71M025
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PDF
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Untitled
Abstract: No abstract text available
Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for
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OCR Scan
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: L7C108/109 128K x 8 Static RAM Low Power ;• v .• s [. : j ;i’[ : <a DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum
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OCR Scan
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L7C108/109
L7C108
L7C109
L7C109KC25*
L7C109KC20*
L7C109KC17*
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PDF
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