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    128K X 8 STATIC RAM Search Results

    128K X 8 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    71024S12TYG Renesas Electronics Corporation 5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout Visit Renesas Electronics Corporation

    128K X 8 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62128

    Abstract: CY62128V JESD22 CY62128-SC
    Text: Cypress Semiconductor Qualification Report QTP# 97195 VERSION 1.0 October, 1997 128K x 8 SRAM - R32 Technology - Fab4 Qualification CY62128 128K x 8 Static Ram 5V Operation CY62128V 128K x 8 Static Ram (3V Operation) Cypress Semiconductor, Inc. 128K x 8 SRAM - R32 Technology


    Original     		PDF CY62128 CY62128V CY62128/CY62128V 32-pin, 400-mil 85C/85 CY62128-SC /-65C CY62128V-SC CY62128 CY62128V JESD22 CY62128-SC

    L7C108WC25

    Abstract: MT5C1008 l7c109wi25
    Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C108WC25 MT5C1008 l7c109wi25

    CXK581020

    Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
    Text: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin CXK581020 L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25

    cy62128ev30ll-55sxe

    Abstract: No abstract text available
    Text: CY62128EV30 MoBL Automotive 1-Mbit 128K x 8 Static RAM 1-Mbit (128K x 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62128EV30[1] is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features


    Original     		PDF CY62128EV30 cy62128ev30ll-55sxe

    14560

    Abstract: cd 5151
    Text: EDI8F32128V 128K x 32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION • 128K x 32 bit CMOS Static RAM The EDI8F32128V is a high speed 4 megabit Static RAM module organized as 128K words by 32 bits. This module is constructed from four 128K x 8 Static RAMs in SOJ packages on an epoxy


    Original     		PDF EDI8F32128V EDI8F32128V 8F32128V 038-8F32128V 039-8F32128V EDI8F32128V10MMC EDI8F32128V12MMC EDI8F32128V10MZC 14560 cd 5151

    Untitled

    Abstract: No abstract text available
    Text: CY62128E MoBL 1-Mbit 128K x 8 Static RAM 1-Mbit (128K x 8) Static RAM Features Functional Description The CY62128E[1] is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E

    HX6228

    Abstract: honeywell memory sram
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Honeywe-8295 HX6228 honeywell memory sram

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Hone8295

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 HLX6228 128K x 8 STATIC RAM—Low Power SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is


    Original     		PDF HLX6228 ADS-14207

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation


    Original     		PDF HLX6228 360mW 40MHz ADS-14207

    CY62128ELL-45SXI

    Abstract: CY62128B CY62128E CY62128ELL CY62128ELL-45SXA CY62128ELL-45ZAXI CY62128ELL-45ZXA CY62128ELL-45ZXI
    Text: CY62128E MoBL 1-Mbit 128K x 8 Static RAM 1-Mbit (128K x 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E CY62128ELL-45SXI CY62128B CY62128ELL CY62128ELL-45SXA CY62128ELL-45ZAXI CY62128ELL-45ZXA CY62128ELL-45ZXI

    CY7C008

    Abstract: CY7C009 CY7C018 CY7C019
    Text: CY7C008/009 CY7C018/01964K/128K x 8/9 Dual-Port Static RAM CY7C008/009 CY7C018/019 64K/128K x 8/9 Dual-Port Static RAM Features • Automatic power-down • True Dual-Ported memory cells that allow simultaneous access of the same memory location • 128K x 8 organization CY7C009


    Original     		PDF CY7C008/009 CY7C018/01964K/128K CY7C018/019 64K/128K CY7C009) CY7C018) CY7C019) CY7C008) 35-micron CY7C008 CY7C009 CY7C018 CY7C019

    Untitled

    Abstract: No abstract text available
    Text: CY7C008/009 CY7C018/01964K/128K x 8/9 Dual-Port Static RAM CY7C008/009 CY7C018/019 64K/128K x 8/9 Dual-Port Static RAM Features • Automatic power-down • True Dual-Ported memory cells that allow simultaneous access of the same memory location • 128K x 8 organization CY7C009


    Original     		PDF CY7C008/009 CY7C018/01964K/128K CY7C018/019 64K/128K CY7C009) CY7C018) CY7C019) CY7C008) 35-micron

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6228 1000mW 40MHz ADS-14206

    CYM1838HG-25M

    Abstract: CYM1838
    Text: PRELIMINARY CYM1838 128K x 32 Static RAM Module Features Functional Description D The CYM1838 is a very high performance 4Ćmegabit static RAM module organized as 128K words by 32 bits. The module is constructed using four 128K x 8 static RAMs mounted onto a multilayer ceramic


    Original     		PDF CYM1838 CYM1838 66pin, CYM1838HG-25M

    CYM1420PD-55C

    Abstract: CYM1420PD-20C CYM1420PD-25C CYM1420PD-30C CYM1420PD-35C CYM1420PD-45C PD05
    Text: CYM1420 128K x 8 Static RAM Module Features Functional Description D The CYM1420 is a very high performance 1Ćmegabit static RAM module organized as 128K words by 8 bits. This module is constructed using four 32K x 8 static RAMs mounted onto a substrate. A deĆ


    Original     		PDF CYM1420 CYM1420 32pin, CYM1420PD-55C CYM1420PD-20C CYM1420PD-25C CYM1420PD-30C CYM1420PD-35C CYM1420PD-45C PD05

    Cross Reference

    Abstract: Pseudostatic RAM TC51832
    Text: Pseudo-Static RAM Cross Reference PSEUDO-STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 32K 64K 128K X X X 8 8 8 128K x 8 w/CS 512K 2-50 X 8 SHARP MODEL LH5P832 LH5P864 LH5P8128 COMPETITIVE VENDOR COMPETITIVE MODEL ACCESS TIME PACKAGE OPTIONS Hitachi


    OCR Scan     		PDF LH5P832 HM65256B TC51832 LH5P864 HM658128A TC518128A TC518129A HM658512 TC518512 LH5P8128 Cross Reference Pseudostatic RAM TC51832

    S-8812

    Abstract: S8812B
    Text: MOSEL / _ M S 8 8 1 2 8 / 128K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • Compatible with JEDEC standard pinout for monolithic megabit 128K x 8 The Mosel MS88120 is a 1 Megabit 1,048,576 bits static random access memory module organized as 128K


    OCR Scan     		PDF 250mW MS88120 MS88128 PID023 MS88128 MSB8128-10PC MSB8128-12PC S-8812 S8812B

    Untitled

    Abstract: No abstract text available
    Text: 1 MEGABIT 128K x 8-BIT CMOS STATIC RAM PLASTIC SIP MODULE i d ï 8MP824S FEATURES: DESCRIPTION: • High-density 1024K (128K x 8) CMOS static RAM module The IDT8MP824S is a1024K (131,072 x 8-bit) high-speed static RAM constructed on an epoxy laminate substrate using four


    OCR Scan     		PDF 8MP824S 1024K IDT8MP824S a1024K IDT71256 8MP824

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 128K x 32 Static RAM M odule Features Functional Description • The CYM1838 is a very high performance 4-megabit static RAM module organized as 128K words by 32 bits. The module is constructed using four 128K x 8 static


    OCR Scan     		PDF CYM1838 CYM1838 66-pin, 128KX WE3C53 38-M-00046

    Untitled

    Abstract: No abstract text available
    Text: 1 MEGABIT 128K x 8 REGISTERED/BUFFERED/ LATCHED CMOS STATIC RAM SUBSYSTEMS IDT7M824 FAMILY FEATURES: DESCRIPTION: • High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and l/Os The IDT7M824 fam ily is a set of 1024K-bit (128K x 8-bit) high­


    OCR Scan     		PDF 1024K-bit -15mA 64-pin, IDT49C802 IDT49C802

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module T he CYM1422 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. This module is constructed using four 32K x 8 static


    OCR Scan     		PDF CYM1422 1422PS-30 1422PS-35 1422PS-45 1422PS-55

    smd AL5

    Abstract: No abstract text available
    Text: CYM1423 pyppucq SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1423 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. This module is constructed using four 64K x 4 static


    OCR Scan     		PDF CYM1423 CYM1423 32-pin, 1423PD-70 1423PD-45 1423PD-55 smd AL5

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS88128 128K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • Compatible with JEDEC standard pinout for monolithic megabit 128K x 8 The Mosel M S88128 is a 1 Megabit 1,048,576 bits static random access memory module organized as 128K (131,072) words by 8 bits. It is built using four surface


    OCR Scan     		PDF MS88128 250mW S88128 MS88128 PID023 MS88128-10PC MS88128-12PC