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    128K X 8 EEPROM JLCC Search Results

    128K X 8 EEPROM JLCC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    MD27C256-25/B Rochester Electronics LLC UVPROM, 32KX8, 250ns, CMOS, CQCC32, CERAMIC, JLCC-32 Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy

    128K X 8 EEPROM JLCC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 128K x 32 EEPROM Module PUMA 2/67E4001/A/B -12/15/20 Issue 4.3 : January 2001 Description Available in PGA Puma 2 , and JLCC (Puma 67) footprints, the Puma *E4001 is a 4 Mbit EEPROM module user configurable as 128K x 32, 256K x 16 or 512K x 8. Available with access times of 120, 150


    Original     		PDF 2/67E4001/A/B E4001 200ns, PUMA67 MIL-STD883 128Kx

    Untitled

    Abstract: No abstract text available
    Text: 128K x 32 EEPROM Module TIGA 2E4001 -12/15/20 TIGA 6E4001/A/B -12/15/20 TIGA 7E4001/A/B -12/15/20 Description Available in PGA TIGA 2 , JLCC (TIGA 1/6) and Gullwing (TIGA 7) footprints, the TIGA *E4001 is a 4 Mbit EEPROM module user configurable as 128K x 32, 256K x 16 or 512K x 8. Available with


    Original     		PDF 2E4001 6E4001/A/B 7E4001/A/B E4001 200ns, MILSTD-883 128Kx

    58C1001

    Abstract: eeprom 4 pin 128k x 8 eeprom JLCC
    Text: EEPROM FT58C1001 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory . SPECIFICATIONS 32-Pin CFP , 32-Pin CSOJ 32-Pin CSOP Comm. Ind, Mil MIL-STD-883 M5004 only RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss FEATURES High speed: 150, 200, and 250ns


    Original     		PDF FT58C1001 MIL-STD-883 M5004 32-Pin 250ns 20mW/MHz 128-Byte FT58C1001 58C1001 eeprom 4 pin 128k x 8 eeprom JLCC

    Untitled

    Abstract: No abstract text available
    Text: 128K x 32 EEPROM Module PUMA 2E4001 -12/15/20 PUMA 67E4001/A/B -12/15/20 PUMA 77E4001/A/B -12/15/20 Elm Road, West Chirton, North Shields, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Available in PGA (Puma 2), JLCC (Puma 67) and


    Original     		PDF 2E4001 67E4001/A/B 77E4001/A/B E4001 200ns, PUMA67/77 MIL-STD-883

    67E4001

    Abstract: d29 08 E4001
    Text: 128K x 32 EEPROM Module PUMA 2/67E4001/A/B -12/15/20 Issue 4.3 : January 2001 Elm Road, West Chirton, North Shields, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Available in PGA (Puma 2), and JLCC (Puma 67) footprints, the Puma *E4001 is a 4 Mbit EEPROM


    Original     		PDF 2/67E4001/A/B E4001 200ns, PUMA67 MIL-STD883 MIL-STD-883 67E4001 d29 08

    67e4

    Abstract: E4001 77E4001 128k x 8 eeprom JLCC
    Text: 128K x 32 EEPROM Module PUMA 2/67/77E4001/A - 12/15/20 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description Available in PGA (Puma 2), JLCC (Puma 67) and Gullwing (Puma 77) footprints, the Puma *E4001 is


    Original     		PDF 2/67/77E4001/A E4001 200ns, MILSTD-883 MIL-STD-883 67e4 77E4001 128k x 8 eeprom JLCC

    77E4001

    Abstract: pumas E4001
    Text: 128K x 32 EEPROM Module PUMA 2E4001 -12/15/20 PUMA 67E4001/A/B -12/15/20 PUMA 77E4001/A/B -12/15/20 Elm Road, West Chirton, North Shields, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Available in PGA (Puma 2), JLCC (Puma 67) and


    Original     		PDF 2E4001 67E4001/A/B 77E4001/A/B E4001 200ns, PUMA67/77 MIL-STD-883 77E4001 pumas

    SRAM 6T

    Abstract: MSM8128 "32K x 8" SRAM dil SRAM 35ns "32K x 8" SRAM PLCC 2035 puma 5 128k x 8 eeprom JLCC
    Text: Part Numbering M S M 8512 SC X L MB - 10 1. 2. 3. 4. 1. 2. Speed 7. 6. 5. TECHNOLOGY 5. PINOUT ARRANGEMENT The memory technology is represented by a single character:- This field identifies the mechanical arrangement of the device pinout:- S D E U blank E


    Original     		PDF MFM8126 MFM8516 16Mbit PUMA2S1000 S4000 S16000 F4006 F16006 PUMA2E1000 SRAM 6T MSM8128 "32K x 8" SRAM dil SRAM 35ns "32K x 8" SRAM PLCC 2035 puma 5 128k x 8 eeprom JLCC

    hitachi hn27c256

    Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
    Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /


    Original     		PDF HM514100 HM514400 HM514800 HM51S4800 HM514900 HN62W4116 HN62W5016N HM62W4018N 50/40ns) hitachi hn27c256 hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    hanbit non-volatile ram

    Abstract: HMN1288J MN128
    Text: HANBit HMN1288J Non-Volatile SRAM MODULE 1Mbit 128K x 8-Bit ,34Pin-JLCC, 5V Part No. HMN1288J GENERAL DESCRIPTION The HMN1288J Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits. The HMN1288J has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write


    Original     		PDF HMN1288J 34Pin-JLCC, HMN1288J 576-bit hanbit non-volatile ram MN128

    M38510/10101

    Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
    Text: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC


    Original     		PDF TDC1046 TDC1049C1V M38510/10301 LM710 LM160 LM161 SE529 M38510/10305 QP2111 M38510/10101 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		PDF M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 FLASH MFM8126 - 70/90/12 Issue 4.3 : April 2001 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW Max Program/Erase 275mW (Max) Standby Power 5.5mW (Max) • JEDEC standard package. • Flexible Sector Erase Architecture - 16K byte sector


    Original     		PDF MFM8126 120ns. MIL-STD-883 128Kx

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 FLASH MFM8126 - 70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 4.2 : November 1998 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW (Max)


    Original     		PDF MFM8126 120ns. 165mW 275mW MIL-STD-883 128Kx

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 EEPROM M E M 812 9 -1 5 /2 0 /2 5 Issue 12 .: February 1993 ADVANCE PRODUCT INFORMATION 131,072 x 8 bit MNOS EEPROM . Features — • Pin Definition Fast Access Time of 150/200/250 ns. Operating Power 200 mW typical. Standby Power 2.5mW typical.


    OCR Scan     		PDF MlL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: MFM8128V/J-25/30 Issue 1.1 : July 1989 128K x 8 CMOS FLASH MFM8128V/J EEPROM ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS FLASH EEPROM Features FLASH™ Eraseable Non-Volatile Memory Access Times of 250/300 ns Operating Temperature Range -40 to +85°C Supply voltage range of 5V±10%


    OCR Scan     		PDF MFM8128V/J-25/30 MFM8128V/J 300mW 500jiW MFM8128J

    Untitled

    Abstract: No abstract text available
    Text: nAH 128K X 8 EEPROM m o î a ï c MEM8129-12/15/20 Issue 1.0: February 1992 M o s a ic ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 131,072 x 8 bit MNOS EEPROM Features Pin Definition Fast Access Time of 120/150/200 ns. Operating Power 200 mW typical.


    OCR Scan     		PDF MEM8129-12/15/20

    Untitled

    Abstract: No abstract text available
    Text: • 19g; 128K X 8 FLASH EEPROM molate MFM8128G/J/S/V/W-15/20 Issue 1.1 : JANUARY 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r Pin D efinition Vpp A16 A15 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GND 131,072 x 8 CMOS FLASH EEPROM Memory Features Access Times of 150/200 ns


    OCR Scan     		PDF MFM8128G/J/S/V/W-15/20 MIL-STD-883 600mil 100mil cAR92i2i

    MOSAIC SEMICONDUCTOR

    Abstract: MEM8129M EM8129-15
    Text: •jjt 80 128K x 8 EEP R O M molate MEM8129-15/20/25 Issue 1.3 : July 1993 M o s a ic S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION N Pin Definition ZD 32 Vcc NC 1 C 131,072 x 8 bit MNOS EEPROM Inc. Features Fast Access Time of 150/200/250 ns. Operating Power 200 mW typical.


    OCR Scan     		PDF MIL-STD-883 X1024 MEM8129-15/20/25 STD-883, MOSAIC SEMICONDUCTOR MEM8129M EM8129-15

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


    OCR Scan     		PDF M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 FLASH mosaic MFM8126S - 70/90/12 semiconductor, inc. 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.2 : November 1998 Features General Description • Fast Access Time of 7 0 / 9 0 / 1 20ns.


    OCR Scan     		PDF MFM8126S 165mW 275mW L-STD-883 128Kx

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


    OCR Scan     		PDF