Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    127F Search Results

    127F Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28127FRTZ-T13 Renesas Electronics Corporation Precision Single and Dual Low Noise Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28127FRTZ Renesas Electronics Corporation Precision Single and Dual Low Noise Operational Amplifiers Visit Renesas Electronics Corporation

    127F Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    127-F11-P10-H-KF-10A E-T-A Circuit Breakers, Circuit Protection, CIR BRKR THRM 10A 250VAC 50VDC Original PDF
    127-F11-P10-H-KF-2A E-T-A Circuit Breakers, Circuit Protection, CIR BRKR THRM 2A 250VAC 50VDC Original PDF
    127-F11-P10-H-KF-6A E-T-A Circuit Breakers, Circuit Protection, CIR BRKR THRM 6A 250VAC 50VDC Original PDF
    127-F-P10-H-0.2A E-T-A Circuit Breakers, Circuit Protection, CIR BRKR THRM 200MA 250VAC 50VDC Original PDF
    127-F-P10-H-KF-1A E-T-A Circuit Protection - Circuit Breakers - CIRC BRKR THRM Original PDF
    127-F-P10-H-KF-4A E-T-A Circuit Protection - Circuit Breakers - CIRC BRKR THRM Original PDF

    127F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSCDRI-127F

    Abstract: 127f MSCDRI-127F-5R6
    Text: SCOPE： This specification applies to the Pb Free high current type SMD inductors for MSCDRI-127F-SERIES PRODUCT INDENTIFICATION MSCDRI-127F-100 M ① ② ③ ④ ① Product Code ② Dimensions Code ③ Inductance Code ④ Tolerance Code 1 SHAPES AND DIMENSIONS


    Original     		PDF MSCDRI-127F-SERIES MSCDRI-127F-100 50Typ. 00Typ. MSCDRI-127F-SERIES 500pcs/Reel MSCDRI-127F 127f MSCDRI-127F-5R6

    transistor marking WC 2C

    Abstract: E22/6/AS7620/TMS320C6678/AS7620/NZT6728-datasheet
    Text: TMS320C6678 SPRS691E—November 2010—Revised March 2014 Multicore Fixed and Floating-Point Digital Signal Processor Check for Evaluation Modules EVM : TMS320C6678 1 TMS320C6678 Features and Description 1.1 Features • Eight TMS320C66x DSP Core Subsystems (C66x


    Original     		PDF TMS320C6678 SPRS691Eâ TMS320C6678 TMS320C66xâ 4096KB transistor marking WC 2C E22/6/AS7620/TMS320C6678/AS7620/NZT6728-datasheet

    Untitled

    Abstract: No abstract text available
    Text: 66AK2E05, 66AK2E02 SPRS865B—June 2013—Revised January 2014 Multicore DSP+ARM KeyStone II System-on-Chip SoC 1 66AK2E05/02 Features and Description • ARM Cortex -A15 MPCore™ CorePac – Up to Four ARM Cortex-A15 Processor Cores at up to 1.4-GHz


    Original     		PDF 66AK2E05, 66AK2E02 SPRS865Bâ 66AK2E05/02 Cortex-A15 Cortex-A15 TMS320C66xâ

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W28J320B/T 16/4M

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x+ 16-/32-Bit DDR2-667 BR17

    W742C816

    Abstract: W742E PC-4000 BELLCORE 202 dual c816
    Text: W742E/C816 4-BIT MICROCONTROLLER Table of Contents1. GENERAL DESCRIPTION .3 2. FEATURES .3


    Original     		PDF W742E/C816 W742C816 W742E PC-4000 BELLCORE 202 dual c816

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


    Original     		PDF W28F321BT/TT 32MBIT W28F321, W28F321

    7813 Texas Instruments Transistor

    Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 7813 Texas Instruments Transistor TMS320C6000 C6000 C6474 C64X SPRS552H BR17

    Untitled

    Abstract: No abstract text available
    Text: TMS320C6472 SPRS612G – JUNE 2009 – REVISED JULY 2011 www.ti.com TMS320C6472 Fixed-Point Digital Signal Processor 1 Features • • • • • • • • • • • Congestion Control • IEEE 1149.6 Compliant I/Os – UTOPIA • UTOPIA Level 2 Slave ATM Controller


    Original     		PDF TMS320C6472 SPRS612G TMS320C6472 8/16-Bit

    Untitled

    Abstract: No abstract text available
    Text: AM5K2E04, AM5K2E02 SPRS864B—June 2013—Revised January 2014 Multicore ARM KeyStone II System-on-Chip SoC 1 AM5K2E04/02 Features and Description • ARM Cortex -A15 MPCore™ CorePac – Up to Four ARM Cortex-A15 Processor Cores at up to 1.4-GHz – 4MB L2 Cache Memory Shared by all Cortex-A15


    Original     		PDF AM5K2E04, AM5K2E02 SPRS864Bâ AM5K2E04/02 Cortex-A15 Cortex-A15

    transistor d880

    Abstract: BR17
    Text: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552E TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 transistor d880 BR17

    Untitled

    Abstract: No abstract text available
    Text: AM5K2E04, AM5K2E02 SPRS864B—June 2013—Revised January 2014 Multicore ARM KeyStone II System-on-Chip SoC 1 AM5K2E04/02 Features and Description • ARM Cortex -A15 MPCore™ CorePac – Up to Four ARM Cortex-A15 Processor Cores at up to 1.4-GHz – 4MB L2 Cache Memory Shared by all Cortex-A15


    Original     		PDF AM5K2E04, AM5K2E02 SPRS864Bâ AM5K2E04/02 Cortex-A15 Cortex-A15

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    TMS320TCI6608

    Abstract: SPRS623A SPRS623B
    Text: TMS320TCI6608 Multicore Fixed and Floating-Point Digital Signal Processor Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not


    Original     		PDF TMS320TCI6608 SPRS623B TMS320TCI6608 SPRS623B--August SPRS623A

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3582B AT49BV322D AT49BV322DT AT49BV

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 127FSR330XJW PHOTOFLASH P arts are RoHS co m p lia n t D ate co d e w h e n p a rts becam e RoHS: 28 APPLICATIONS Photoflash, strobes. Security systems ELECTRICAL SPECIFICATIONS Capacitance: 120 uF Tolerance: -10 % . +20 % Dissipation Factor: 0.06 Max at 120 Hz and 20°C


    OCR Scan     		PDF 127FSR330XJW

    Untitled

    Abstract: No abstract text available
    Text: CMOS DUAL SyncFlFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 and DUAL 4,096 x 18 FEATURES: • The IDT72805LB is equivalent to two IDT72205LB 256 x 18 FIFOs • The IDT72815LB is equivalent to two IDT72215LB 512 x 18 FIFOs • The IDT72825LB is equivalent to two IDT72225LB 1,024 x 18


    OCR Scan     		PDF IDT72805LB IDT72205LB IDT72815LB IDT72215LB IDT72825LB IDT72225LB IDT72835LB IDT72235LB IDT72845LB IDT72245LB