diode bsy28
Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28
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BSY17
BSY18
EN744
2N3985
BF153
BSX90
2N4421
diode bsy28
BF152
CS9018
BF158
2SC738
2N3984
bsy28 diode
SC2644
PN3563
BSY28
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PDF
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BC560AP
Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C
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Original
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BCY79A
A5T3504
2N4452
BCl77-6
BCY79B
BC560AP
2sa720 semi
KT313A
LOW-POWER SILICON PNP
BC212AP
KT313B
BC454C
2SA1115
tBc560b
MM1614
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PDF
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SK3019
Abstract: 2sc4044s 2SC652 2SC947 BF262 2SC651 JE9016 2N270S nfe-12g 50m
Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 SO S5 90 JE9016E JE9016F JE9016F JE9016G JE9016G JE9016 JE9016H JE9016H JE90161 JE90161 BF262 BF200 2SC947 2SC1047 2SC2404 BF200B 2SC707 2SC2377 BF1S0 2SC761
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Original
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JE9016E
JE9016F
JE9016G
JE9016
JE9016H
JE90161
SK3019
2sc4044s
2SC652
2SC947
BF262
2SC651
2N270S
nfe-12g 50m
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PDF
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Surface Mount
Abstract: P3519
Text: Weight/Mass 0.490 Grams Maximum Packaging Tape & reel 24mm : 13" reel, 1500 pieces max. SERIES P3519 FERRITE CORE 0.01 5.35 0.10 ±10% 0.01 5.11 0.12 ±10% 0.01 4.83 0.15 ±10% 0.01 4.62 0.18 ±10% 0.02 4.39 0.22 ±10% 0.02 3.17 0.27 ±10% 0.02 3.97 0.33
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Original
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P3519
96sales
P3519R
P3519
3260B
Surface Mount
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PDF
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pnp germanium to36
Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
Text: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652
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Original
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2N2728
MP2357
2N2357
2N1522
2N1523
MP2358
pnp germanium to36
MP2400B
2N575A
2N5694
2N2156
2N575
2N1518
TO36 package
germanium
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A,
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
1600MT/s
IS43TR81280AL
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM AUGUST 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A,
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
1600MT/s
IS43TR81280AL
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
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Original
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IS43/46TR16640B,
IS43/46TR16640BL
IS43/46TR81280B,
IS43/46TR81280BL
128MX8,
64MX16
cycles/64
cycles/32
3TR81280BL
-125JBL
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM JULY 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V High speed data transfer rates with system
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Original
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IS43/46TR16640B,
IS43/46TR16640BL
IS43/46TR81280B,
IS43/46TR81280BL
128MX8,
64MX16
1600MT/s
IS43TR81280BL
-125JBL
78-ball
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM JUNE 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V High speed data transfer rates with system
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Original
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IS43/46TR16640B,
IS43/46TR16640BL
IS43/46TR81280B,
IS43/46TR81280BL
128MX8,
64MX16
1600MT/s
IS43TR81280BL
-125JBL
78-ball
|
PDF
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IS43TR16640
Abstract: DDR31866K IS43TR81280A IS46TR ac-175a 96-ball IS43TR16640A
Text: IS43TR16640A, IS43TR81280A 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION APRIL 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Refresh Interval:
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Original
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IS43TR16640A,
IS43TR81280A
128MX8,
64MX16
cycles/64
cycles/32
1066MT/s
1333MT/s
1600MT/s
IS43TR16640
DDR31866K
IS43TR81280A
IS46TR
ac-175a
96-ball
IS43TR16640A
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PDF
|
IS43TR16640A
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •
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Original
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IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
switch-15GBLA1
IS46TR81280A
IS43TR16640A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: *ù r a y iìfà “V Œ u f 11 a n q l£ P r o j e c t i on .THIS PHAW1NCT IS UWUBLI3HEü. | RELEASED FOR PUBLICATION g Cfr’ YUIOHT 19 BY AMP INCCRPOMTID. ALL IWTBKATÎONAL R lW rf M N RVH . 10.67±0.38 Z.420±.0153 2. 39±0 .25£.094±. 070J 28. S8± 0.8*
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OCR Scan
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000030J
208B57
16/SO
208657part
S/in/90
5/30/sJ
S/30/90
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PDF
|
transistor t09
Abstract: A1383 transistor 2sc114 usaf516es047m usaf516es048m 2SA474 2SA27 usaf517es060m 2sc107 transistor 2SC114 replacement
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
transistor t09
A1383 transistor
2sc114
usaf516es047m
usaf516es048m
2SA474
2SA27
usaf517es060m
2sc107
transistor 2SC114 replacement
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PDF
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|
|
2SD128 transistor
Abstract: 2N2222B MDS38 2n1585 2N2426 2SC18H 2SC34 2SD31 SFT184 GT1608
Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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T0106
TE3904
2N914A
2N2272
300M5A
2SC100
10B705
300MA
2SD128 transistor
2N2222B
MDS38
2n1585
2N2426
2SC18H
2SC34
2SD31
SFT184
GT1608
|
PDF
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SD653C
Abstract: SD65
Text: Bulletin 12093 rev. B 11/97 International IÖ R Rectifier SD853C.S50K SERIES FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c tifie r d io d e s e rie s ■ 5 .0 |is re c o v e ry lim e ■ H igh v o lta g e ra tin g s up to 4 5 0 0 V
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OCR Scan
|
SD853C.
15G0V
SD653C
SD65
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TTL MEMORY 93407 • 93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO R M ERLY 5033 »9033 V1 I f\l* D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bil-oriented, non destructive readout m emory cells, com patible w ith F a irch ild T T L . These m emory cells, organized as 16 words by
|
OCR Scan
|
16-BIT
16-bit,
|
PDF
|
Fairchild TTL
Abstract: No abstract text available
Text: TTL MEMORY 93407 •93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO RM ER LY 5033 »9033 1 l ! . a / D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bit-o r.en ted , non-destructive readout m em ory cells, com patible w ith F a irch ild T T L . These m em ory cells, organized as 16 w ords by
|
OCR Scan
|
16-BIT
16-bit,
16-bit
02T3014
Fairchild TTL
|
PDF
|
SAA 1251
Abstract: SVA-P111 fiber grinding and polishing tool 124u SW-011 LED 1550nm ScansUX69 Seiko fc sap
Text: S II •* ELECTRONIC COMPONENTS Seiko Instruments FIBER OPTICS Seiko Instruments Inc. Plug Ferrule for Fiber Optic Connector •FEATURES • H ig h -q u a lity p lu g fe rru le , w ith h ig h re lia b ility c e ra m ic u se d a t th e o p tic a l p a rt • P e rfe c t p lu g fe rru le for s in g le -rn o d e use
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OCR Scan
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W170X
H270mm
50/60Hz
OFL-12
OFL-12
50/60HZ
SAA 1251
SVA-P111
fiber grinding and polishing tool
124u
SW-011
LED 1550nm
ScansUX69
Seiko fc sap
|
PDF
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ibaa
Abstract: 70121l
Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT J ir ? F eatures * High-speed access - * * Com m ercial: 25/35/45/55ns max. Low-power operation - ID T70121/70125S A ctive: 675m W (typ.) * * * * IDT70121S/L IDT70125S/L INT flag fo r port-to-port communication
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OCR Scan
|
IDT70121S/L
IDT70125S/L
25/35/45/55ns
T70121/70125S
T70121/701251A
52-pin
IDT70121/IDT70125
IDT70121
ibaa
70121l
|
PDF
|
Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
|
OCR Scan
|
|
PDF
|
49C466
Abstract: No abstract text available
Text: 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C466 IDT49C466A PRELIMINARY FEATURES: DESCRIPTION: • 64-bit wide Flow-thruEDC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 10ns — Error Correct Time: 15ns
|
OCR Scan
|
64-BIT
IDT49C466
IDT49C466A
16-deep
208-pin
IDT49C466/A
64-bit5V
49C466
49C466
|
PDF
|
transistor A495
Abstract: BF189 BF187 2SC622 transistor BC131 FET K5010 2SC804 A495 2SC621A TMT697
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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2SA372
U7003
2SA446
450MI
450MSA
10Om0
2N960/46
2N962/46
460MI
460M5
transistor A495
BF189
BF187
2SC622
transistor BC131
FET K5010
2SC804
A495
2SC621A
TMT697
|
PDF
|
EEL-19
Abstract: TB 1226 EN aes 1136 HC EEL-19 ANI 1015 KSS 1206 TRW 1179
Text: IQUAL'IK ICA I ION I RE QUIREMENTS I REMOVED M I L- M- 38 51 0/ 40 1A 9 Auaust 1983 Tiimrmmnr MIL-M-38510/40HUSAF 22 October 1981 | | I MILITARY SPECIFICATION MICROCIR CU IT S, DIGITAL, N-CHANNEL, S IL ICON-GATE , MO NO LI TH IC PERIPHERAL INTERFACE ADAPTER
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OCR Scan
|
MIL-M-38510/401A
MIL-M-38510/40HUSAF)
7M-OM/M71
EEL-19
TB 1226 EN
aes 1136
HC EEL-19
ANI 1015
KSS 1206
TRW 1179
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PDF
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