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    rf microwave amplifier with S Parameters

    Abstract: 340 mmic mma-273336 "Microwave technology Inc" Amplifier 20dbm p1db
    Text: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω


    Original     		PDF MMA-273336 27-33GHz 20dBm/tone 2800mA 124x110x2 27GHz 33GHz. 36dBm MMA273336 rf microwave amplifier with S Parameters 340 mmic mma-273336 "Microwave technology Inc" Amplifier 20dbm p1db

    Untitled

    Abstract: No abstract text available
    Text: ¡9 HCS245MS Radiation Hardened Octal Bus Transceiver, Tri-State, Non-Inverting December 1992 Features Pinouts 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K or 1 Mega-RAD Si


    OCR Scan     		PDF HCS245MS MIL-STD-1835 CDIP2-T20, utputs-15 Ls500n 124x110 05A/cm2

    Untitled

    Abstract: No abstract text available
    Text: f f l H A R F R HCTS245MS IS S E M I C O N D U C T O R Radiation Hardened Octal Bus Transceiver, Three-State, Non-lnverting September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20


    OCR Scan     		PDF HCTS245MS MIL-STD-1835 CDIP2-T20 12IONS: 124x110 05A/cm2 HCTS245 TA14417A.