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    124NS Search Results

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    SN75124NSR Texas Instruments Triple Line Receiver 16-SO 0 to 70 Visit Texas Instruments Buy
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    Texas Instruments SN75124NS

    IC RECEIVER 0/3 16SO
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    Rochester Electronics LLC SN75124NS

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    JRH Electronics 171-001-24NS-P1

    MICRO-D SUBMINIATURE TYPE STRIP
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    Connector MicroStrip Plug 24 Position Solder Cup Straight Through Hole - Bulk (Alt: 171-001-24NS-P1)
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    Interstate Connecting Components 171-001-24NS-P1
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    124NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    edo dram 60ns 72-pin simm

    Abstract: simm EDO 72pin edge connector sl36 edo ram 72pin edo dram 60ns 72-pin simm 32mb 4C32M4F-A60C "32mb x 36" simm edo dram 72-pin simm 32
    Text: SL36 S/T 4C32M4F-AxxC 32M X 36 BITS DRAM SIMM with EDO and Optimized for ECC FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL36.-A60C 60ns 15ns 104ns 25ns SL36.-A70C 70ns 20ns 124ns 30ns The SiliconTech SL36(S/T)4C32M4F-AxxC is a 32MB x 36 bits


    Original     		PDF 4C32M4F-AxxC -A60C 104ns -A70C 124ns 4C32M4F-AxxC 32-pin 400-mil 72-pin BDQ31-34 edo dram 60ns 72-pin simm simm EDO 72pin edge connector sl36 edo ram 72pin edo dram 60ns 72-pin simm 32mb 4C32M4F-A60C "32mb x 36" simm edo dram 72-pin simm 32

    MSC2323258D

    Abstract: No abstract text available
    Text: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a


    Original     		PDF MSC2323258D-xxBS4/DS4 152-word 32-bit MSC2323258D-xxBS4/DS4 72-pin MSC2323258D

    MSC23V43257D

    Abstract: MSC23V43257D-50BS8 MSC23V43257D-60BS8 MSC23V43257D-70BS8
    Text: This version: Apr. 13. 1999 Semiconductor MSC23V43257D-xxBS8 4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an


    Original     		PDF MSC23V43257D-xxBS8 304-word 32-bit MSC23V43257D-xxBS8 100-pin MSC23V43257D MSC23V43257D-50BS8 MSC23V43257D-60BS8 MSC23V43257D-70BS8

    Untitled

    Abstract: No abstract text available
    Text: STI642004G1 -70 VG 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tRAC 1 1 tCAC 70ns 20ns *RC ^HPC 124ns 30ns The Simple Technology STI642004G1-70VG is a 2M x 64 bits Dynamic RAM high density memory module. The Simple


    OCR Scan     		PDF STI642004G1 144-PIN 124ns STI642004G1-70VG 28-pin 400-mil STI642004G1-70

    Untitled

    Abstract: No abstract text available
    Text: STI641004G1-70SVGS 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DlMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: • • • • • • • • • • • *RAC ^CAC ‘ rc *HPC 70ns 20ns 124ns 30ns The Simple Technology STI641004G1-70SVGS is a 1M x 64


    OCR Scan     		PDF STI641004G1-70SVGS 144-PIN STI641004G1-70SVGS 44-pin 400-mil Tab17.

    Untitled

    Abstract: No abstract text available
    Text: IBM11S2325H 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 rac RAS Access Tim e 60ns 70 ns tc A G CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e


    OCR Scan     		PDF IBM11S2325H 72-Pin 104ns 124ns 128ms

    Untitled

    Abstract: No abstract text available
    Text: IBM11S2325L 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 Irac RAS Access Tim e 60ns 70 ns tcAG CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e


    OCR Scan     		PDF IBM11S2325L 72-Pin 104ns 124ns 128ms

    KM416v1204at

    Abstract: KM416V1204AT-7
    Text: STI641004G1-70VG 144-PIN SO-DIMMS 1 M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: t RAC j t CAC *RC 70ns 20ns 124ns The Simple Technology STI641004G1-70VG is a 1M x 64 bits Dynamic RAM high density memory module. The Simple


    OCR Scan     		PDF STI641004G1-70VG 144-PIN 124ns STI641004G1-70VG 44-pin 400-mil 14ied KM416v1204at KM416V1204AT-7

    Untitled

    Abstract: No abstract text available
    Text: IBM11S2325L 2M x 32 SODIMM M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: • • • • -60 -70 W c RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns t/kA Access Time From Address 30ns 35ns tRC Cycle Time 104ns 124ns


    OCR Scan     		PDF IBM11S2325L 72-Pin 104ns 124ns 128ms 50H4743 SA14-4556-00 2Mx32 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: IBM11S1325L 1 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 I rac RAS Access Tim e 60ns 70 ns tcA G CAS Access Tim e 15ns 20 ns Ua A ccess Tim e From Address 30ns 35ns I rc Cycle Tim e 104ns 124ns


    OCR Scan     		PDF IBM11S1325L 72-Pin 104ns 124ns 128ms

    TC514265DJ

    Abstract: TC514265D TC514265 SOJ40-P-400
    Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­


    OCR Scan     		PDF TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


    OCR Scan     		PDF THM328025BS/BS THM328025BS/BSG TC5117405BSJ 704mW THMxxxxxx-60) 074mW THMxxxxxx-70) DM32020695 M328025BS/BSG THM328025BS/BSG-6Q/70 TC5117405

    DC244

    Abstract: No abstract text available
    Text: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS


    OCR Scan     		PDF STI644004G1-70SVGS 144-PIN 124ns STI644004G1-70SVGS 24-pin 300-mil DC244

    34S71

    Abstract: 005D C1005D
    Text: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C KM44C1005DJ 003427b 34S71 005D C1005D

    Untitled

    Abstract: No abstract text available
    Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)


    OCR Scan     		PDF IBM11M2645H 2Mx64 104ns 124ns

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 2 5 L IB M 1 1 D 2 3 2 5 L 1M/2M x 32 DRAM Module Features Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & C M O S compatible Extended Data Out E DO access cycle Refresh Modes: RAS-Only, CBR, and Hidden


    OCR Scan     		PDF 72-Pin 104ns 124ns 11D1325L IBM11D2325L 26H3205 26H3206) 50H7995

    Untitled

    Abstract: No abstract text available
    Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)


    OCR Scan     		PDF IBM0117405 IBM0117405M IBM0117405B IBM0117405P 28H4726 28H4726. 350ns 350ns)

    Untitled

    Abstract: No abstract text available
    Text: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !


    OCR Scan     		PDF IBM11S4325BP IBM11S4325BM 72-Pin 104ns 124ns

    Untitled

    Abstract: No abstract text available
    Text: IBM11T1645LP IBM11T1645NP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 VSs/18VCc pins


    OCR Scan     		PDF IBM11T1645LP IBM11T1645NP VSs/18VCc 1104ns 124ns

    DG34B

    Abstract: No abstract text available
    Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BS D034b64 DG34B

    CS53

    Abstract: MSC23V13258D-70BS2 MSC23V13258D-XXBS2
    Text: M SC23V13258D-xxBS2 98.3.12 OKI semiconductor MSC23V13258D-xxBS2 . 1,048,576 Word X 32 Bit DYNAMIC RAM MODULE D E S C R IP T IO N The Oki MSC23V13258D-XXBS2 is a fully decoded, 1,048,576-word X 32 bit CMOS dynamic random access memory composed of two 16-Mb (1 Mx16) DRAMs in TSOP packages. The mounting of two DRAMs together with


    OCR Scan     		PDF MSC23V13258D-xxBS2 MSC23V13258D-XXBS2 576-word 100-pin 32-Bit cycles/16 Row/10 CS53 MSC23V13258D-70BS2

    KM44C4004B

    Abstract: No abstract text available
    Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4004B KM44C4004BS 0034S12

    km416c254b

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254B, KM416V254B 256Kx 256Kx16 00E02M3 km416c254b

    KM44C4104bk

    Abstract: cd-rom circuit diagram
    Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BK 7Tbm42 0034bb2 KM44C4104bk cd-rom circuit diagram