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    Abstract: No abstract text available
    Text: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT


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    PDF 1241DD 18GHz MwT-12 -F94-

    Untitled

    Abstract: No abstract text available
    Text: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • 10 dB GAIN AT 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz TO 12 GHz 0.3 MICRON REFRACTORY METALVGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE


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    PDF 000054b

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    Abstract: No abstract text available
    Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz


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    PDF MwT-10 MwT-10 MwT10