Untitled
Abstract: No abstract text available
Text: HWL34YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 14.5 dB Typical Gain at 2.4GHz • 5V to 10V Operation Description The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications.
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HWL34YRA
1234567849A7BCDEF7
HWL34YRA
moun700
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Untitled
Abstract: No abstract text available
Text: HWL30YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
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HWL30YRA
1234567849A7BCDEF7
HWL30YRA
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Untitled
Abstract: No abstract text available
Text: HWF1686RA 1234567849A7BCDEF7 7 June 2005 V3 1 2345678196A87B6C7B1 Features • Output Power: P1dB=30 dBm typ. • High Gain: GL=16 Db (typ.) • High Efficiency: PAE =45% (typ.) • High Linearity: IP3=45 dBm (typ.) • Low Cost Description The HWF1686RA is a medium power GaAs
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HWF1686RA
1234567849A7BCDEF7
2345678196A87B6C7B1
HWF1686RA
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Untitled
Abstract: No abstract text available
Text: HWF1681RA 1234567849A7BCDEF7 7 June 2005 V3 Features • High Output Power: P1dB=34.5 dBm typ. Outline Dimensions • High Gain: GL=15 Db (typ.) • High Efficiency: PAE =43% (typ.) • High Linearity: IP3=48 dBm (typ.) • Class A or Class AB Operation
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15dBm,
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Untitled
Abstract: No abstract text available
Text: HWF1687RA 1234567849A7BCDEF7 7 June 2005 V3 1 1 1 1 1 2345678196A87B6C7B1 Features • Output Power: P1dB=31.5 dBm typ. • High Gain: GL=16 dB (typ.) • High Efficiency: PAE =45% (typ.) • High Linearity: IP3=46 dBm (typ.) • Class A or Class AB Operation
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HWF1687RA
1234567849A7BCDEF7
2345678196A87B6C7B1
HWF1687RA
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Untitled
Abstract: No abstract text available
Text: HWL26NPA 1234567849A7BCDEF7 E 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description1
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HWL26NPA
1234567849A7BCDEF7
HWL26NPA
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0951 v1.02
Abstract: No abstract text available
Text: HWL36YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 13 dB Gain • 5V to 10V Operation Description The HWL36YRA is a Power GaAs FET designed for various L-band & S-band applications.
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HWL36YRA
1234567849A7BCDEF7
HWL36YRA
0951 v1.02
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Untitled
Abstract: No abstract text available
Text: HWL30YRF 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRF is a Medium Power GaAs FET designed for various L-band & S-band
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HWL30YRF
1234567849A7BCDEF7
HWL30YRF
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Untitled
Abstract: No abstract text available
Text: HWL26NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description
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HWL26NPB
1234567849A7BCDEF7
HWL26NPB
OT-23)
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Untitled
Abstract: No abstract text available
Text: HWF1682RA 1234567849A7BCDEF7 7 January 2006 V4 Outline Dimensions Features • High Output Power: P1dB=37 dBm typ. • High Gain: GL=11.5 dB (typ.) • High Efficiency: PAE =45% (typ.) • High Linearity: IP3=48 dBm(typ.) • Class A or Class AB Operation
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HWF1682RA
1234567849A7BCDEF7
HWF1682RA
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Untitled
Abstract: No abstract text available
Text: HWL36YRF 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 13 dB Gain • 5V to 10V Operation Description The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications.
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HWL36YRF
1234567849A7BCDEF7
HWL36YRF
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Untitled
Abstract: No abstract text available
Text: HWL23NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description
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HWL23NPB
1234567849A7BCDEF7
HWL23NPB
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Untitled
Abstract: No abstract text available
Text: HWL32NPA 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3
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HWL32NPA
1234567849A7BCDEF7
HWL32NPA
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Untitled
Abstract: No abstract text available
Text: HWL27YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
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HWL27YRA
1234567849A7BCDEF7
HWL27YRA
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Untitled
Abstract: No abstract text available
Text: HWL27NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain 2 3 Description The HWL27NPB is a medium Power GaAs FET using
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1234567849A7BCDEF7
HWL27NPB
HWL27NPB
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