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    1206 MARKING Z9 Search Results

    1206 MARKING Z9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    1206 MARKING Z9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MF 198 ferrite

    Abstract: capacitor j476 capacitor Marking J336
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF RF18085BR3 MRF18085BLSR3 MRF18085BR3 MF 198 ferrite capacitor j476 capacitor Marking J336

    C38 diode

    Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF 470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor

    z15 Diode glass

    Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 z15 Diode glass Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263

    200B103MW

    Abstract: 100B5R6CW
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF18085B Rev. 6, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and


    Original     		PDF MRF18085B MRF18085BLR3 MRF18085BLSR3 MRF18085BLR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 5, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and


    Original     		PDF MRF18085B MRF18085BLR3 MRF18085BLSR3 MRF18085B

    J476

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18085B Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF18085B MRF18085BR3 MRF18085BLSR3 J476

    diode zener c26

    Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 diode zener c26 A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570T1 mrf1570

    FERRITE BEAD 1000 OHM 0805

    Abstract: AN1955 BC847 LP2951 MRF18085B MRF18085BLR3 MRF18085BLSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and


    Original     		PDF MRF18085B MRF18085BLR3 MRF18085BLSR3 MRF18085BLR3 FERRITE BEAD 1000 OHM 0805 AN1955 BC847 LP2951 MRF18085B MRF18085BLSR3

    AN1955

    Abstract: BC847 LP2951 MRF18085B MRF18085BLR3 MRF18085BLSR3 J476 transistor marking z9
    Text: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and


    Original     		PDF MRF18085B MRF18085BLR3 MRF18085BLSR3 MRF18085BLR3 AN1955 BC847 LP2951 MRF18085B MRF18085BLSR3 J476 transistor marking z9

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1570T1 MRF1570NT1/FNT1. MRF1570FT1 MRF1570T1

    150 watts power amplifier layout

    Abstract: 3.40 pf capacitor marking Z4 MOTOROLA 934 zener diode marking 4x A113 AN211A AN215A AN721 MRF1570FT1
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570T1 Rev. 6, 5/2006 Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1570T1 MRF1570NT1/FNT1. MRF1570FT1 MRF1570T1 150 watts power amplifier layout 3.40 pf capacitor marking Z4 MOTOROLA 934 zener diode marking 4x A113 AN211A AN215A AN721 MRF1570FT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1

    AN215A

    Abstract: z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 AN215A z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A

    zener diode marking c24

    Abstract: transistor c36 j063
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570N zener diode marking c24 transistor c36 j063

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18085B Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF18085B MRF18085BR3 MRF18085BLSR3

    NIPPON CAPACITORS

    Abstract: MRF6S19140HR3 GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF 88onductor MRF6S19140HR3 MRF6S19140HSR3 NIPPON CAPACITORS GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF

    MRF5S9101N

    Abstract: 200B A113 A114 A115 AN1955 C101 JESD22 MRF5S9101NBR1 MRF5S9101NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1 MRF5S9101N 200B A113 A114 A115 AN1955 C101 JESD22 MRF5S9101NBR1

    j497

    Abstract: MRF18085A
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and


    Original     		PDF MRF18085AR3 MRF18085ALSR3 j497 MRF18085A

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1

    25C1740

    Abstract: marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 3, 5/2006 Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1 25C1740 marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    marking Z4

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1