transistor cross reference
Abstract: No abstract text available
Text: Skip to content | | | Products By Type Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Components Power Sources RF & Microwave Products Tooling Products Touch Screen Displays Tubing, Molded and Harnessing Products
|
Original
|
PDF
|
2000Hz
transistor cross reference
|
diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
|
Original
|
PDF
|
|
c151A
Abstract: FDMS3602S
Text: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A
|
Original
|
PDF
|
FDMS3602S
c151A
FDMS3602S
|
Untitled
Abstract: No abstract text available
Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally
|
Original
|
PDF
|
FDMS7606
|
2ty transistor
Abstract: 1202D 1204D 1206D 1208D 1210D J15A
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BUDI-1200D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R Die Size: 0.120" Round PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND
|
Original
|
PDF
|
BUDI-1200D-1A
12BAR
2ty transistor
1202D
1204D
1206D
1208D
1210D
J15A
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3664S
FDMS3664S
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FDMS3610S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3610S
|
1201D
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3664S
FDMS3664S
1201D
|
AO-A15
Abstract: 8l35 MCM72F6 MCM72F7
Text: MOTOROLA SEMICONDUCTOR Order TECHNICAL DATA this document by MCM72F6/D — – Advance Information 512KB and 1MB Synchronous Fast Static RAM Module MCM72F6 MCM72F7 The MCM72F6 512KB is configured as 64K x 72 bits and the MCM72F7 (1 MB) is configured as 128K x 72 bits, Both are packaged in a 168 pin dual–in–line memory
|
Original
|
PDF
|
MCM72F6/D
512KB
MCM72F6
MCM72F7
512KB)
Box5405,
l-303-675-21400
rl-600-441-2447
AO-A15
8l35
MCM72F6
MCM72F7
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
|
FDMS3620S
Abstract: No abstract text available
Text: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3620S
FDMS3620S
|
fdms3600
Abstract: FDMS3600S N9OC
Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3600S
FDMS3600S
fdms3600
N9OC
|
N9CC
Abstract: FDMS3606AS 150 mh inductor
Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3606AS
FDMS3606AS
N9CC
150 mh inductor
|
|
|
11-CQ2
Abstract: 22CF
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3668S
FDMS3668S
11-CQ2
22CF
|
2545 power n-channel mosfet
Abstract: No abstract text available
Text: FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3626S
FDMS3626S
2545 power n-channel mosfet
|
FDMS7602S
Abstract: 501B 8 P
Text: FDMS7602S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A dual MLP package.The switch node has been internally
|
Original
|
PDF
|
FDMS7602S
FDMS7602S
501B 8 P
|
FDMS3606AS
Abstract: No abstract text available
Text: FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3606AS
FDMS3606AS
|
1201-HA2
Abstract: Allen-Bradley 1397 1321-3R80-B 1321-3R8-B 1321-3r25-b 1321-3R35-B 1201-HA1 1321-3R45-B 1321-3R8-c 1321-3R160-B
Text: 1397 Digital DC Drive Available in either regenerative or non-regenerative configurations, the 1397 family of digital DC drives employs advanced microprocessor technology to help deliver performance, flexibility and communications options in a complete, economical drive package.
|
Original
|
PDF
|
1397-MB006
1397-MB010
1397-MB014
1397-MB018
1397-MB024
1397-MB031
1397-MB040
1397-MB050
1397-MB065
1397-MB085
1201-HA2
Allen-Bradley 1397
1321-3R80-B
1321-3R8-B
1321-3r25-b
1321-3R35-B
1201-HA1
1321-3R45-B
1321-3R8-c
1321-3R160-B
|
fdms3660s
Abstract: 501B 8 P
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3660S
FDMS3660S
501B 8 P
|
Untitled
Abstract: No abstract text available
Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally
|
Original
|
PDF
|
FDMS7606
FDMS7606
|
Untitled
Abstract: No abstract text available
Text: FDMS3602AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally
|
Original
|
PDF
|
FDMS3602AS
|
D325
Abstract: No abstract text available
Text: 8 Manufacturing date c o n s i s t i n g o f : 2 d i g i t s f o r the year Y Y , 2 d i g i t s old P/N Tyco (without the week ( WW) and 1 digit for the day -x-xxxxxxx-x V Code 0,6 P/N TYCO V Soldering/Wire-Wrap pins V42254-) 00 -0. 4 YYWWD +XXXX-+XXX
|
OCR Scan
|
PDF
|
DIN41612
IEC603-2
V42254-)
V42254-
-D325
SR10-0177-03
SR10-0157-02
V42254-B1xxx-D325-
D325
|
IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
|
OCR Scan
|
PDF
|
VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
|
