Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1200V POWER MOSFET Search Results

    1200V POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1200V POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M81738FP

    Abstract: half bridge driver
    Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES Floating supply voltage up to 1200V Low quiescent power supply current


    Original     		PDF M81738FP M81738FP 24pin half bridge driver

    M81019FP

    Abstract: M81738FP M81738 M81019 inverter igbt circuit diagrams in bridge
    Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current


    Original     		PDF M81738FP M81738FP 24pin M81019FP M81738 M81019 inverter igbt circuit diagrams in bridge

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P

    M81019FP

    Abstract: m81019 dv/dt HVIC high voltage diodes Inverter high voltage power transistor Driver high side igbt 1200V Half Bridge Driver micro inverter
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V


    Original     		PDF M81019FP M81019FP 24-Lead 24P2Q-A SSOP24-P-300-0 m81019 dv/dt HVIC high voltage diodes Inverter high voltage power transistor Driver high side igbt 1200V Half Bridge Driver micro inverter

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V


    Original     		PDF M81019FP M81019FP 24-Lead 24P2Q-A SSOP24-P-300-0

    5n120

    Abstract: diode zener 22A STP5N120 JESD97
    Text: STP5N120 N-channel 1200V - 2.8Ω - 4.4A - TO-220 Zener - protected SuperMESH Power MOSFET TARGET SPECIFICATION Features Type VDSS RDS on ID PW STP5N120 1200V < 3.5 Ω 4.4A 160W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability


    Original     		PDF STP5N120 O-220 5n120 diode zener 22A STP5N120 JESD97

    JESD97

    Abstract: STP1N120 P1N120
    Text: STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PW STP1N120 1200V < 38Ω 500mA 45W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability


    Original     		PDF STP1N120 500mA O-220 500mA JESD97 STP1N120 P1N120

    MOSFET 1200v 3a

    Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
    Text: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG

    SiC IGBT High Power Modules

    Abstract: SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet
    Text: Product Brief main Features 1200V IGBT 4 n n n n THe neW 1200V IGBT 4 generation combined with the improved emitter Controlled diode from Infineon provides three optimized chip versions for low, medium and high power IGBT modules. These chips are designed to the needs


    Original     		PDF B133-H9049-G2-X-7600 SiC IGBT High Power Modules SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM08CD3AG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 10mΩ max @ Tj = 25°C ID = 260A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM08CD3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM08CD3AG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 7.5mΩ typ @ Tj = 25°C ID = 270A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM08CD3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM08CD3AG VDSS = 1200V RDSon = 8mΩ typ @ Tj = 25°C ID = 250A @ Tc = 25°C Phase leg MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM08CD3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


    Original     		PDF APTMC120TAM17CTPAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


    Original     		PDF APTMC120TAM33CTPAG

    bridge rectifier diode 500V

    Abstract: Rectifier Diode 20A Vrrm 500V
    Text: APTM50HM75FRT Full – Bridge With Input diode bridge MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C VRRM = 1200V IFAV25 = 45A Application • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Features


    Original     		PDF APTM50HM75FRT IFAV25 bridge rectifier diode 500V Rectifier Diode 20A Vrrm 500V

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM12CT3AG