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    1200A Search Results

    1200A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    9ZX21200AKLFT Renesas Electronics Corporation 12-output DB1200Z Derivative Visit Renesas Electronics Corporation
    9ZX21200AKLF Renesas Electronics Corporation 12-output DB1200Z Derivative Visit Renesas Electronics Corporation
    51762-10401200AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 4P 12S STB Right Angle Receptacle. Visit Amphenol Communications Solutions
    51702-11001200AALF Amphenol Communications Solutions PwrBlade®, Power Connectors, 10P 12S Vertical Header, Solder To Board Visit Amphenol Communications Solutions
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    1200A Price and Stock

    TE Connectivity RHW-110/30-1200/ADH-0

    HEATSHRINK RHW POLY 110MMX4' BLK
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    DigiKey RHW-110/30-1200/ADH-0 Box 120 1
    • 1 $34.58
    • 10 $34.58
    • 100 $34.58
    • 1000 $34.58
    • 10000 $34.58
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    Master Electronics RHW-110/30-1200/ADH-0
    • 1 -
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    • 100 $35.04
    • 1000 $34.34
    • 10000 $34.34
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    JRH Electronics 805-003-12MT11-200AC

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-003-12MT11-200AC 99 1
    • 1 $2903.3
    • 10 $2688.24
    • 100 $1828
    • 1000 $1828
    • 10000 $1828
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    JRH Electronics 805-003-22ZC11-200AB

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    DigiKey 805-003-22ZC11-200AB 75 1
    • 1 $1874.75
    • 10 $1724.765
    • 100 $1574.7858
    • 1000 $1574.7858
    • 10000 $1574.7858
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    JRH Electronics 805-004-07MT11-200AB

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    DigiKey 805-004-07MT11-200AB 57 1
    • 1 $1443.17
    • 10 $1327.719
    • 100 $1212.265
    • 1000 $1212.265
    • 10000 $1212.265
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    JRH Electronics 805-004-07NF11-200AA

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    DigiKey 805-004-07NF11-200AA 57 1
    • 1 $1443.17
    • 10 $1327.719
    • 100 $1212.265
    • 1000 $1212.265
    • 10000 $1212.265
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    Find more 1200A price and stock on Findchips.com

    1200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 开 环 型＞＞b 系 列＞＞霍尔电流传感器 ＞＞霍尔电流传感器 HEC-B5 系列 电器特性： 规格型号 HEC600-B5 HEC800-B5 HEC1000-B5 HEC1200-B5 HEC1500-B5 HEC2000-B5 HEC2500-B5 额定电流 600A 800A 1000A 1200A 1500A 2000A 2500A 线性范围


    Original     		PDF HEC600-B5 HEC800-B5 HEC1000-B5 HEC1200-B5 HEC1500-B5 HEC2000-B5 HEC2500-B5 UL94-V0

    Untitled

    Abstract: No abstract text available
    Text: 开 环 型＞＞b 系 列＞＞霍尔电流传感器 ＞＞霍尔电流传感器 HEC-B6 系列 电器特性： 规格型号 HEC800-B6 HEC1000-B6 HEC1200-B6 HEC1500-B6 HEC1800-B6 HEC2000-B6 HEC2500-B6 额定电流 800A 1000A 1200A 1500A 1800A 2000A 2500A 线性范围


    Original     		PDF HEC800-B6 HEC1000-B6 HEC1200-B6 HEC1500-B6 HEC1800-B6 HEC2000-B6 HEC2500-B6 UL94-V0

    DAQCard-1200

    Abstract: PCI-1200 82C53 82C55A CB-50 CB-50LP 25PIN D-SUB CONNECTORS
    Text: PCI-1200, DAQCard-1200, Lab-PC-1200, Lab-PC-1200AI, DAQPad-1200 Low-Cost Multifunction I/O – 100 kS/s, 12-Bit, 8 Analog Inputs PCI-1200, DAQCard-1200, Lab-PC-1200, Lab-PC-1200AI, DAQPad-1200 Analog input 8 single-ended, 4 differential channels 12-bit resolution


    Original     		PDF PCI-1200, DAQCard-1200, Lab-PC-1200, Lab-PC-1200AI, DAQPad-1200 12-Bit, DAQCard-1200 PCI-1200 82C53 82C55A CB-50 CB-50LP 25PIN D-SUB CONNECTORS

    CM1200HCB-34N

    Abstract: TRANSISTOR JC 515 transistor 2955
    Text: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V


    Original     		PDF CM1200HCB-34N CM1200HCB-34N TRANSISTOR JC 515 transistor 2955

    SB20-05F

    Abstract: en2992
    Text: Ordering number:EN2992A SB20-05F Schottky Barrier Diode 50V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1200A [SB20-05F] Features · Low forward voltage (VF max=0.55V).


    Original     		PDF EN2992A SB20-05F SB20-05F] O-126LP SB20-05F en2992

    erskine

    Abstract: erskine rectifier erskine dc 48v erskine rectifier dc 48v 42U Rack isolators 415v 5448v erskine dc erskine rectifier dc 24v up/erskine rectifier dc 24v
    Text: Product Features D e s c ri p t i o n • The Erskine SMS1200 utilises high frequency switchmode technology to deliver a compact, efficient and reliable source of DC power. The system provides 1200A output at a nominal -48v DC in a single cabinet. The system comes complete with two


    Original     		PDF SMS1200 2090H 550kg 55022-B, 15-30Mhz 55022-B 30Mhz S9077THL4 erskine erskine rectifier erskine dc 48v erskine rectifier dc 48v 42U Rack isolators 415v 5448v erskine dc erskine rectifier dc 24v up/erskine rectifier dc 24v

    UL 248-15

    Abstract: LR29862 E81895
    Text: JLLN/JLLS POWR-T Class T Fuses 300/600 VAC • Fast-Acting ■ 1 – 1200 Amperes SPECIFICATIONS Voltage Ratings: AC: 300 Volts JLLN ; 600 Volts (JLLS) DC: 125 Volts (JLLN 110 – 1200A); 300 Volts (JLLS) Interrupting Ratings: AC: 200,000 amperes rms symmetrical


    Original     		PDF E81895) E71611) LR29862) UL 248-15 LR29862 E81895

    Untitled

    Abstract: No abstract text available
    Text: S Series F e at u r e s • 100-1200A ratings • 60mv and 75mv versions • 0.5% accuracy class • Manganin 6J13 plate resistive element construction • T, L, and DIN type terminals • H59-1 (UNS 37700) Brass Terminal Construction High Current Shunts


    Original     		PDF 00-1200A H59-1 SHD1-100C060DE SHT1-250C060DE SHL1-600C060DE SHL1-1K2C060DE SHD1-100C075DE SHT1-200C075DE SHT1-500C075DE SHL1-1K0C075DE

    8k83

    Abstract: diode 6.L
    Text: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features                 <  =  4


    Original     		PDF 1200G 1200G 8k83 diode 6.L

    FWP-250A

    Abstract: FWP-350A FWP-800A A02008 FWP-150A FWP70B FWP-10B FWP-15B FWP-20B FWP-30B
    Text: Bussmann FWP 700V Type 5-1200A R ® Electrical Characteristics Ordering Information I2t A2 Sec Rated Current Clearing Watts Part Carton RMS-Amps Pre-arc at 700V Loss Number Qty. 5 1.6 10 1.5 FWP-5B


    Original     		PDF FWP-10B FWP-15B FWP-20B FWP-25B A02008 FWP-250A FWP-350A FWP-800A A02008 FWP-150A FWP70B FWP-10B FWP-15B FWP-20B FWP-30B

    CM1200DC-34N

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N ● IC . 1200A ● VCES . 1700V


    Original     		PDF CM1200DC-34N 19K/kW 42K/kW /-15V CM1200DC-34N

    Untitled

    Abstract: No abstract text available
    Text: UMS-1200-A16-G UMS-1200A16-GOCTAVE BAND VOLTAGE CONTROLLED OSCILLATOR OCTAVE BAND VOLTAGE CONTROLLED OSCILLATOR Package: A16, 12.7mm x 12.7mm x 3.43mm VCC Features  Octave Band Tuning  Frequency: 600MHz to 1200MHz  Resonator: Microstrip  PCB: Rogers


    Original     		PDF UMS-1200-A16-G UMS-1200A16-GOCTAVE 600MHz 1200MHz 135in) 100kHz 1000kHz 10000kHz 12dBr, DS120302

    DFM600XXM45-F000

    Abstract: DS5915-1
    Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating


    Original     		PDF DFM600XXM45-F000 DS5915-1 LN25309) DFM600XXM45-F000

    DFM600XXM65-K000

    Abstract: DFM600XXXM65-K000
    Text: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating


    Original     		PDF DFM600XXXM65-K000 DS5807-1 LN25500) DFM600XXe DFM600XXM65-K000 DFM600XXXM65-K000

    SG3000GXH29

    Abstract: SG3000GXH 13-108D1A
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent


    OCR Scan     		PDF SG3000GXH29 SG3000GXH29) SG3000GXH29 SG3000GXH 13-108D1A

    SG3000GXH29

    Abstract: No abstract text available
    Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us


    OCR Scan     		PDF SG3000GXH23G 000V// --25A, SG3000GXH29. SG3000GXH29

    fbt symbol 6000

    Abstract: monitor FBT SM-19B SM19A
    Text: MATERIALS CHARACTERISTICS MATERIALS Mn-Zn 23t t*îac Bms H=1200A/m mT Ml «g 8M-19A WT90 500 ±20% 380±20% 380±20% 3200 ±20% 1900 ±20% SM-19B 2200 ± 20 % 23 t; 220 230 260 480 500 500 100 t; 150 155 170 340 390 400 Brms mT 23 t; 150 145 210 180 180


    OCR Scan     		PDF 8M-19A SM-19B 200A/m 16kHz 150mT 32kHz 200mT 10kHz SM-70S fbt symbol 6000 monitor FBT SM-19B SM19A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current


    OCR Scan     		PDF SG3000JX24 SG3000JX24)

    Untitled

    Abstract: No abstract text available
    Text: SG2500GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2500GXH24 SG2500GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : Vj)ujjj=4500V R.M.S On-State Current : It (RMS) = 1200A Peak Turn-Off Current : I t G Q M = 2500A Critical Rate of Rise of On-State Current : d i/d t = 400A/ //s


    OCR Scan     		PDF SG2500GXH24 SG2500GXH24) 000V///S SG2SOOOXH24)

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L E S S E Y o c t o b e r i 995 SE M IC OND UC TOR S DS4271-2.2 T F 2 1 9 .B FAST SWITCHING THYRISTOR APPLICATIONS KEY PARAMETERS v DRM 2000V 190A ^T RMS 1200A ^TSM dV/dt 200V/(is dl/dt 500A/|is 40jis • High Power Inverters And Choppers. ■ UPS.


    OCR Scan     		PDF DS4271-2 40jis TF219 TF21918B TF21916B TF21914B 0D2BS25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current


    OCR Scan     		PDF SG3000JX24 SG3000JX24) 1350VI

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage


    OCR Scan     		PDF 1200GXHH22 1300g

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		PDF 1200GXHH24 961001EAA1

    RECTIFIER DIODE D135

    Abstract: No abstract text available
    Text: Bulletin 12085/A htemational S Rectifier sd 8ooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1200A • W id e current range ■ High voltag e ratings up to 4 5 0 0 V ■ High surge current capab ilities ■ Diffused junction ■ H ockey Puk version


    OCR Scan     		PDF 12085/A DQ-200AB D-141 4AS54S2 RECTIFIER DIODE D135