Untitled
Abstract: No abstract text available
Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 Unit in mm High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: • Average Forward Current: • Double Side Cooling VRRM=4500V IF AV =1200A Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage
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1200GXHH22
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage
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1200GXHH22
1300g
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1200GXHH22
Abstract: No abstract text available
Text: 1200GXHH22 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 2 0 0 G X H H22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V r r m = 4500 V Average Forward Current : If AV = 1200 A Double Side Cooling MAXIMUM RATINGS
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1200GXHH22
200GXH
125-C
1200GXHH22
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1200GXHH22
Abstract: toshiba ES 50
Text: TOSHIBA 1200GXHH22 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 2 0 0 G X H H22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • 2 - gS3.5 ± 0.2 DEPTH 2.1 ± 0 .4 Repetitive Peak Reverse Voltage : V rrm —4500V Average Forward Current
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1200GXHH22
200GXH
1200GXHH22
toshiba ES 50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FAST RECOVERY RECTIFIER SEMICONDUCTOR 1200GXHH22 TnCUIDA • w w ■ I I TECHNICAL DATA SILICON DIFFUSED TYPE 1200GXHH22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V r r ]V[ = 4500V Average Forward Current : Ip (AV) = 1200A
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1200GXHH22
1200GXHH22)
10ms-Half
1200GXHH22-
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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6B4B41
Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Text: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N
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DO-41
DO-15
D041SS
6B4B41
1J4B41
1B4B41
6J4B41
6G4B41
1G4B41
4b4b41
4G4B41
10G4B41
15B4B42
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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SG1200EX24
SG1500EX24
SG2000EX24
SG2200GXH24
SG3000EX24
SG3000GXH24
SG3000JX24
SG2000GXH26
SG800GXH24
SG1000GXH26
500EXH21
100gxhh21
800A 75m
gate turn off thyristors
TOSHIBA 100GXHH21
800GXHH21
800GX
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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SG2500EX24
SG3000EX24
SG4000EX26
SG2000R24
SG2000U24
SG2000W24
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
100EXG11
500EXH21
200FXG12
200FXH12
800GXHH21
gto 200A
100exh
gto 300A
100GXHH21
4500v
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2200GXH24
SG3000EX24
SGR3000EX26
SG4000EX26
SGR3000GXH26
SG4000GXH26
gate turn off thyristors
500EXH21
800gxhh21
800exh21
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