Untitled
Abstract: No abstract text available
Text: CS 22 VRRM = 800-1200 V IT AV M = 16 A Phase Control Thyristors Electrically Isolated Tab VRSM VDSM VRRM VDRM V V 800 1200 800 1200 TO-220 Isolated Type A C G CS 22-08io1M CS 22-12io1M A C A A = Anode, C = Cathode, G = Gate Tab = Isolated Symbol Conditions
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O-220
22-08io1M
22-12io1M
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a2s 506
Abstract: No abstract text available
Text: CS 22 VRRM = 800-1200 V IT AV M = 16 A Phase Control Thyristors Electrically Isolated Tab VRSM VDSM VRRM VDRM V V 800 1200 800 1200 TO-220 Isolated Type A C G CS 22-08io1M CS 22-12io1M C A G A = Anode, C = Cathode, G = Gate Tab = Isolated Symbol Conditions
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O-220
22-08io1M
22-12io1M
400Hz
a2s 506
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IXYS SCR Gate Drive
Abstract: IXYS CS 30
Text: CS 22 VRRM = 800-1200 V IT AV M = 16 A Phase Control Thyristors Electrically Isolated Tab VRSM VDSM VRRM VDRM V V 800 1200 800 1200 TO-220 Isolated Type A C C A G G CS 22-08io1M CS 22-12io1M A = Anode, C = Cathode, G = Gate Tab = Isolated Symbol Conditions
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O-220
22-08io1M
22-12io1M
20070704a
IXYS SCR Gate Drive
IXYS CS 30
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Untitled
Abstract: No abstract text available
Text: FCC 21-12io VDRM = VRRM = 1200 V = 21 A IT AV ITSM = 300 A Phase Control Thyristors -Phaseleg Topologyin ISOPLUS i4-PACTM Preliminary Data VRSM VRRM VDSM VDRM V V 1300 Type 1 1200 FCC 21-08io 5 Features Thyristors Conditions Maximum Ratings VDRM, VRRM 1200
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21-12io
21-08io
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IGD 001
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface*
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
IGD 001
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Untitled
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Test Conditions
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ISOPLUS220TM
220TM
19-08ho1C
19-12ho1C
ISOPLUS220
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CS19
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G C Symbol
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ISOPLUS220TM
220TM
19-08ho1C
19-12ho1C
ISOPLUS220
CS19
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IXYS SCR Gate Drive
Abstract: No abstract text available
Text: CS 29 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 23 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS220TM Type A C 1 2 800 1200 CS 29-08io1C CS 29-12io1C 3 G
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ISOPLUS220TM
29-08io1C
29-12io1C
ISOPLUS220
IXYS SCR Gate Drive
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Untitled
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G C A G Isolated back surface*
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
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CS19
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION = 800 - 1200 V = 35 A = 13 A VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Symbol
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ISOPLUS220TM
220TM
19-08ho1C
19-12ho1C
ISOPLUS220
CS19
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thyristor silicon chips
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS220TM Type A C 1 2 800 1200 CS 19-08ho1C CS 19-12ho1C 3 G
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ISOPLUS220TM
19-08ho1C
19-12ho1C
ISOPLUS220
thyristor silicon chips
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Untitled
Abstract: No abstract text available
Text: FCC 21-12io VDRM = VRRM = 1200 V IT AV = 21 A ITSM = 300 A Phase Control Thyristors -Phaseleg Topologyin ISOPLUS i4-PACTM Preliminary Data VRSM VRRM VDSM VDRM V V 1300 Type 1 1200 FCC 21-12io 5 Features Thyristors Conditions Maximum Ratings VDRM, VRRM 1200
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21-12io
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Untitled
Abstract: No abstract text available
Text: CS 29 VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A Phase Control Thyristor ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS220TM Type A C CS 29-08io1C CS 29-12io1C 1 G 2 3 Isolated back surface*
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ISOPLUS220TM
29-08io1C
29-12io1C
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Untitled
Abstract: No abstract text available
Text: CS 19 VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 13 A Phase Control Thyristor ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS220TM Type A C CS 19-08ho1C CS 19-12ho1C 1 G 2 3 Isolated back surface*
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ISOPLUS220TM
19-08ho1C
19-12ho1C
ISOPLUS220
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CS thyristor cs 3-06
Abstract: CS thyristor cs 5-08 thyristor scr 162
Text: CS 22 Phase Control Thyristor Electrically Isolated Tab VRSM VDSM VRRM VDRM V V 800 1200 Type Isolated TO-220 Isolated TO-220 800 1200 = 800 - 1200 V = 29 A = 19 A VRRM IT RMS IT(AV)M A CS 22-08io1M CS 22-12io1M C G Preliminary Data Sheet Symbol C Test Conditions
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O-220
22-08io1M
22-12io1M
O-220
728B1
065B1
123B1
CS thyristor cs 3-06
CS thyristor cs 5-08
thyristor scr 162
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CLA 30 E 1200
Abstract: No abstract text available
Text: CLA 30 E 1200 PB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 PB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-220
60747and
20110209c
CLA 30 E 1200
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cla30e1200pb
Abstract: No abstract text available
Text: CLA 30 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-247
60747and
20110209d
cla30e1200pb
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CLA50E1200HB
Abstract: CLA50E1200 low voltage scr ixys scr CLA50E1200TC CLA50E CLA 80 E 1200 THYRISTOR 1200 C 106 F scr
Text: CLA 50 E 1200 TC advanced V RRM = I T RMS = I T(AV)M = Low Voltage SCR Single Thyristor 1200 V 79 A 50 A Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-268AA
60747and
20090708b
CLA50E1200HB
CLA50E1200
low voltage scr
ixys scr
CLA50E1200TC
CLA50E
CLA 80 E 1200
THYRISTOR 1200
C 106 F scr
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CLA50E1200HB
Abstract: CLA50E1200 marking HB diode CLA50E1200TC thyristor AT 505 S 12
Text: CLA 50 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-247
60747and
20101215e
CLA50E1200HB
CLA50E1200
marking HB diode
CLA50E1200TC
thyristor AT 505 S 12
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thyristor SCR 406
Abstract: thyristor scr CLA30E1200PC CLA30E1200HB cla30e1200 CMA30E1600PB CLA30E1200PB CMA30E1600PN cla30e12 CMA30E
Text: CLA 30 E 1200 PC advanced V RRM = I T RMS = I T(AV)M = Medium SCR Single Thyristor 1200 V 47 A 30 A Part number 2 CLA 30 E 1200 PC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-263
60747and
20080708a
thyristor SCR 406
thyristor scr
CLA30E1200PC
CLA30E1200HB
cla30e1200
CMA30E1600PB
CLA30E1200PB
CMA30E1600PN
cla30e12
CMA30E
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CLA 80 E 1200
Abstract: CLA80E1200HF cla80e1200 80 E PLUS247 scr 2032 Package Marking code A1 cla80e
Text: CLA 80 E 1200 HF tentative V RRM = I T RMS = I T(AV)M = Medium SCR Single Thyristor 1200 V 126 A 80 A Part number 2 CLA 80 E 1200 HF 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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PLUS247
bloc0747and
60747and
CLA 80 E 1200
CLA80E1200HF
cla80e1200
80 E
PLUS247
scr 2032
Package Marking code A1
cla80e
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CMA30E1600PB
Abstract: cla30e1200 CLA30E1200HB CMA30E CMA30E1600PN CLA30E1200PC cla30e CLA 30 E 1200 CLA30E1200PB CLA 30 E 1200 PB
Text: CLA 30 E 1200 PB advanced V RRM = I T RMS = I T(AV)M = Medium SCR Single Thyristor 1200 V 47 A 30 A Part number 2 CLA 30 E 1200 PB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-220
60747and
20080708a
CMA30E1600PB
cla30e1200
CLA30E1200HB
CMA30E
CMA30E1600PN
CLA30E1200PC
cla30e
CLA 30 E 1200
CLA30E1200PB
CLA 30 E 1200 PB
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CLA50E1200
Abstract: CLA50E1200HB 548 thyristor B4CD1 cla50
Text: CLA 50 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-247
60747and
20101215e
CLA50E1200
CLA50E1200HB
548 thyristor
B4CD1
cla50
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Untitled
Abstract: No abstract text available
Text: PIXYS Phase Control Thyristor CS 630 ITRM Ss =1400A I' = 630 A VRRM = 1200-1600 V tavm Type 3 4 1200 1400 1600 1200 1400 1600 Symbol CS 630-12io1 CS 630-14io1 CS 630-16io1 Maximum Ratings Test Conditions 1400 630 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine
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OCR Scan
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630-12io1
630-14io1
630-16io1
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