Si2333CDS
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • TrenchFET Power MOSFET MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 Qg (Typ.) APPLICATIONS
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Si2333CDS
O-236
OT-23)
Si2333CDS-T1-E3
18-Jul-08
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PDF
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E3 marking code
Abstract: Si2333DS E3- marking e3 Marking
Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch
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Original
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Si2333DS
O-236
OT-23)
E3 marking code
E3- marking
e3 Marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch
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Original
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Si2333DS
O-236
OT-23)
S-22121â
25-Nov-02
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch
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Original
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Si2333DS
O-236
OT-23)
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch
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Original
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Si2333DS
O-236
OT-23)
S-21789â
07-Oct-02
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PDF
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SI2333DS
Abstract: No abstract text available
Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch
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Original
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Si2333DS
O-236
OT-23)
08-Apr-05
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PDF
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Si2333DS
Abstract: E3- marking E3 marking code
Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch
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Original
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Si2333DS
O-236
OT-23)
S-22121--Rev.
25-Nov-02
E3- marking
E3 marking code
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PDF
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Si2333CDS
Abstract: Si2333CDS-T1-GE3
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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SI2333CDS-T1
Abstract: Si2333CDS Si2333CDS-T1-GE3
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Available
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Original
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Si2333CDS
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
18-Jul-08
SI2333CDS-T1
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PDF
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Si2333CDS
Abstract: Si2333CDS-T1-GE3 Si2333C
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
11-Mar-11
Si2333C
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PDF
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si2333cds
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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Original
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PMV250EPEA
O-236AB)
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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Original
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PMV250EPEA
O-236AB)
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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Original
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PMV130ENEA
O-236AB)
AEC-Q101
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PDF
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PMV65XP
Abstract: No abstract text available
Text: SO T2 3 PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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Original
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PMV65XP
O-236AB)
PMV65XP
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V
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Original
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Si2333DDS
O-236
OT-23)
Si2333DDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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si2333dds
Abstract: si2333dd SI2333DDS-T1-GE3
Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V
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Original
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Si2333DDS
O-236
OT-23)
Si2333DDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si2333dd
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si2333DS
O-236
OT-23)
Si2333DS-T1-E3
Si2333DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si2333DS
O-236
OT-23)
Si2333DS-T1-E3
Si2333DS-T1-GE3
11-Mar-11
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PDF
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Si2333DS-T1-E3
Abstract: Si2333DS E3- marking
Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si2333DS
O-236
OT-23)
Si2333DS-T1-E3
Si2333DS-T1-GE3
18-Jul-08
E3- marking
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PDF
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Si2333DS-T1-E3
Abstract: Si2333DS
Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si2333DS
O-236
OT-23)
Si2333DS-T1-E3
Si2333DS-T1-GE3
11-Mar-11
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PDF
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