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    Keysight Technologies N9912C-4GHz

    RF Test Equipment FieldFox RF Analyzer w/cable and antenna, vector network, spectrum analyzer 4GHz
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    Mouser Electronics N9912C-4GHz 5
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    Keysight Technologies N9912C-6.5GHz

    RF Test Equipment FieldFox RF Analyzer w/cable and antenna, vector network, spectrum analyzer 6.5GHz
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    Mouser Electronics N9912C-6.5GHz 3
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    Keysight Technologies N9912C-10GHz

    RF Test Equipment FieldFox RF Analyzer w/cable and antenna, vector network, spectrum analyzer 10GHz
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    Mouser Electronics N9912C-10GHz 1
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    ADLINK Technology Inc CPU Core i3-3120ME 2.4GHz FCPGA988

    CPU - Central Processing Units CPU, Core i3-3120ME, 2.40GHz, 2-Core, 3MB SmartCache, Ivy Bridge, AW8063801117902 SR0WM, Step:L1, MM# 923001
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    Mouser Electronics CPU Core i3-3120ME 2.4GHz FCPGA988
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    ADLINK Technology Inc Xeon E3-1225V2 3.2GHz FCLGA1155

    CPU - Central Processing Units CPU, Xeon E3-1225 v2, 3.20GHz, 4-Core, 8MB SmartCache, Ivy Bridge, CM8063701160603 SR0PJ, Step:E1, MM# 919975
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    Mouser Electronics Xeon E3-1225V2 3.2GHz FCLGA1155
    • 1 $319.8
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    12 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    divider

    Abstract: 12-WAY 12GHz power divider
    Text: JXWBGF-T-12-11.5-12-15 11.5~12GHz 12-Way Power Divider Test report is for reference only. TEST REPORT for JXWBGF-T-12-11.5-12-15 Page 1 JXWBGF-T-12-11.5-12-15 11.5~12GHz 12-Way Power Divider Technical Specification 11.5-12 Frequency Range GHz 1.5 Insertion Loss(dB)


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    JXWBGF-T-12-11 12GHz 12-Way 70x160x10 divider power divider PDF

    Untitled

    Abstract: No abstract text available
    Text: Suspended Substrate ◆ Specifications - Diplexer Filters Nominal Bandedge Passband Frequencies Frequencies GHz (GHz) DC-2 DC-1.9 2-4 2.1-4 DC-4 DC-3.8 4-8 4.2-8 DC-6 DC-5.7 6-12 6.3-12 DC-8 DC-7.6 8-12 8.4-12 DC-10 DC-9.5 10-16 10.5-16 DC-12 DC-11.6 12-18


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    DC-10 DC-12 DC-11 DC-10 PDF

    1218

    Abstract: DC-10
    Text: JXWBLB-T-BP-12-18-S 12-18GHz SSS Band Pass Filter TEST REPORT For JXWBLB-T-BP-12-18-S 1 JXWBLB-T-BP-12-18-S 12-18GHz SSS Band Pass Filter Technical Specification 12-18 3dB Pass Band GHz 12.6-17.1 1dB Pass Band(GHz) 45dB min @ DC-10.2GHz 45dB min @ 20.7-22GHz


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    JXWBLB-T-BP-12-18-S 12-18GHz DC-10 7-22GHz 1218 PDF

    HIGH FREQUENCY 50 OHM HIGH POWER COAX CABLE

    Abstract: DC-12
    Text: 12 GHz hand formable .086 Coax cables 50 Ohm DC-12 GHz Hand Formable Coaxial Cables Features: Electrical Specifications: Impedance: 50 Ohms Frequency: DC to 12 GHz Insertion Loss: <0.82 dB/ft at 12 GHz VSWR: <1.3, DC to 12 GHz Nominal Capacitance: 28.6 pF/ft


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    DC-12 CCSMA-MM-086-3 CCSMA-MM-086-4 CCSMA-MM-086-5 CCSMA-MM-086-6 HIGH FREQUENCY 50 OHM HIGH POWER COAX CABLE PDF

    TC1201

    Abstract: TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801
    Text: 20060526 FET Chips Products Selection Guide I. Super Lower Noise GaAs FETs Product No. Freq. GHz N.F. (dB) P-1 dB (dBm) Gain (dB) Notes TC1101 12 0.5 18.5 15 Chip TC1101V 12 0.5 18.5 15 Chip / with via hole TC1102 12 0.5 - 13 Chip TC1201 12 0.5 21.5 12 Chip


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    TC1101 TC1101V TC1102 TC1201 TC1201V TC1202 TC1301 TC1301V TC1304 TC1304V TC1201 TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801 PDF

    FPD200

    Abstract: MIL-HDBK-263 400x400
    Text: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE


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    FPD200 FPD200is FPD200 MIL-HDBK-263 400x400 PDF

    TC2181

    Abstract: TC1101 0736 27319
    Text: TRANSCOM TC2181 January 2002 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES • 0.5 dB Typical Noise Figure at 12 GHz PHOTO ENLARGEMENT • High Associated Gain: Ga = 12 dB Typical at 12 GHz • 18 dBm Typical Power at 12 GHz • 13 dB Typical Linear Power Gain at 12 GHz


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    TC2181 TC2181 TC1101 ELECTRICAL98 0736 27319 PDF

    Untitled

    Abstract: No abstract text available
    Text: SERIES 3.5/12 Series 3.5/12-CATV Serie 3.5/12-CATV Robuste und stabile koaxiale Steckverbindung mit Schraubfesthaltung mit besonderen Ansprüchen an Reflexionsfreiheit bis zur Grenzwellenlänge des Koaxquerschnitts ca. 12 GHz . Durch den Schraubverschluß wird eine mechanisch sichere


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    5/12-CATV 5/12-connectors D-84526 PDF

    9435 GM

    Abstract: TC1201 9435 72 TRANSCOM TC1201 6526 89 18 8244-27 TC2201
    Text: TC2201 REV.2_04/12/2004 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES • • • • • • • PHOTO ENLARGEMENT 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz


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    TC2201 TC2201 TC1201 9435 GM 9435 72 TRANSCOM TC1201 6526 89 18 8244-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER SPLITTERS/COMBINERS 50 & 75Ω 12 WAY-0° 1 to 1700 MHz ZFSC-12 SURFACE MOUNT ZN12PD JEPS-12 PSC-12 ISOLATION dB FREQ. RANGE MHz MODEL NO. NEW fL-fU JEPS-12-10 PSC-12-1 50-1000 1-200 ZN12PD-17 800-1700 ZFSC-12-1 NEW n ZFSC-12-1W-75 ZFSC-12-11 ZFSC-12-1-75


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    ZFSC-12 ZN12PD JEPS-12 PSC-12 JEPS-12-10 PSC-12-1 ZN12PD-17 ZFSC-12-1 ZFSC-12-1W-75 ZFSC-12-11 PDF

    FPD200

    Abstract: FPD200 DIE
    Text: FPD200 GENERAL PURPOSE PHEMT DIE Datasheet v2.1 FEATURES: • • • • • LAYOUT: 19 dBm Output Power P1dB 12 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


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    FPD200 FPD200 22A114. MIL-STD-1686 MIL-HDBK-263. FPD200 DIE PDF

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA PIN-Schottky Limiter With a Flat Leakage of 12 dBm From 7 GHz to 12 GHz TECHNICAL DATA SHEET PE8036 50 Ohm SMA PIN-Schottky Limiter With a Flat Leakage of 12 dBm From 7 GHz to 12 GHz Configuration Limiter Type RF Input Connector RF Input Impedance


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    PE8036 imiter-12-dbm-7000-mhz-12000-mhz-pe8036-p PE8036 PDF

    TRANSISTOR C 6090 lg

    Abstract: TRANSISTOR C 6090 TC1101 8484 au
    Text: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz


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    TC1101 TC1101 TRANSISTOR C 6090 lg TRANSISTOR C 6090 8484 au PDF

    TA075-180-24-12

    Abstract: No abstract text available
    Text: TA075-180-24-12 REV.0_04/12/2004 7.5 – 18 GHz 12 dBm Amplifier FEATURES • • • P1dB : 12 dBm NF : 4.5 dB Bias Condition: 200 mA @ 15 V ELECTRICAL SPECIFICATIONS Ta = 25 °C SYMBOL DESCRIPTION MIN TYP MAX UNITS 18 GHz 24 25.5 dB ±1.0 ±2.0 dB 4.5


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    TA075-180-24-12 TA075-180-24-12 PDF

    FPD7612

    Abstract: MIL-HDBK-263
    Text: FPD7612 GENERAL PURPOSE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 11 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE BOND


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    FPD7612 FPD7612 MIL-HDBK-263 PDF

    lc CONNECTOR DRAWING

    Abstract: 10GHz RF mixer
    Text: JXWBHP-T-3000-4000-12 3~4GHz Mixer Test report is for reference only. TEST REPORT for JXWBHP-T-3000-4000-12 Page 1 JXWBHP-T-3000-4000-12 3~4GHz Mixer Technical Specification IF Frequency GHz 3.0~4.0 RF Frequency(GHz) 3.0~4.0 LO Frequency(GHz) 0.1~1.0 12 LO Power (dBm)


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    JXWBHP-T-3000-4000-12 12dBm -10dB lc CONNECTOR DRAWING 10GHz RF mixer PDF

    Untitled

    Abstract: No abstract text available
    Text: MwT- PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2004 Chip Dimensions: 775 x 241 microns Chip Thickness: 100 microns Features: +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate


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    MwT-PH15 PDF

    6822 TRANSISTOR

    Abstract: TRANSISTOR 6822 gl 7445 6822 8891 transistor 9718 80Au-20Sn 6822 TRANSISTOR equivalent PT 6961 SN 46 LS 46
    Text: TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES • • • • Low Noise Figure: NF = 0.8 dB Typical at 12 GHz High Associated Gain: Ga = 10 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • •


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    TC1301 TC1301 6822 TRANSISTOR TRANSISTOR 6822 gl 7445 6822 8891 transistor 9718 80Au-20Sn 6822 TRANSISTOR equivalent PT 6961 SN 46 LS 46 PDF

    Filtronic* FPD6836

    Abstract: FPD6836 MIL-HDBK-263
    Text: FPD6836 0.25W POWER PHEMT • • FEATURES ♦ 25.5 dBm Linear Output Power at 12 GHz ♦ 10 dB Power Gain at 12 GHz ♦ 16.5 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 24 GHz ♦ 50% Power-Added Efficiency ♦ 8V Operation DRAIN BOND


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    FPD6836 FPD6836 Filtronic* FPD6836 MIL-HDBK-263 PDF

    ph15

    Abstract: No abstract text available
    Text: MwT- PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2004 Chip Dimensions: 775 x 241 microns Chip Thickness: 100 microns Features: +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate


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    MwT-PH15 ph15 PDF

    BF777W

    Abstract: BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606
    Text: RF Bipolar Transistors For com plete package outlines, refer to pages PO-1 through PO-6 T yp e M a x im u m Ratings VCEO 'c N=NPN /t V mA mW GHz dB 'c mA VCE / V MHz 15 40 20 35 35 20 25 30 30 12 12 12 12 20 20 20 20 40 40 12 12 12 12 15 15 12 15 12 15 16


    OCR Scan
    6SOT323 OT323 BF777W BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606 PDF

    4503-sk case style

    Abstract: fp35 diode 8109 2308-SK fp-31 1557-S SK diode 9001-SK 2508-SK SK 26 diode
    Text: MICROWAVE CONTROL DEVICE SELECTION GUIDE TYPE FREO. RANGE GHz MODEL NO. INSERTION LOSS (dB) 2-4 4-8 8-12 12-18 ISOLATION (dB) 2-4 4-8 8-12 12-18 VSWR 4-8 8-12 12-18 2-4 REFLECT. SWITCHING OR SPEED TERM (ns) DRIVER TYPE CASE' STYLE PAGE NO. BROADBAND 2-18 GHz SWITCHES


    OCR Scan
    2303-SK 2308-SK 2508-SK 2503-SK FP-29 4503-SK 6501-SK 12-18I 4010-15M 4503-sk case style fp35 diode 8109 fp-31 1557-S SK diode 9001-SK SK 26 diode PDF

    MGF4313

    Abstract: MGF4919
    Text: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E


    OCR Scan
    M6f4314£ MGF4313E MQF43t9iE MOF441 MGF44I7D MGF4714AP NH3F4814E MGF4918E MGF4919E MGF4313 MGF4919 PDF

    FHX34X

    Abstract: FHX13x
    Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10


    OCR Scan
    FHX04X FHX06X FHX13X FHX14X FHX34X FHX35X FHX45X FHR02X FHR20X PDF