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    S29DS032J

    Abstract: SSTL-18 11x9mm
    Text: S29DS032J 32 Megabit, 3.0 Volt-only DDR Burst Mode Flash Memory featuring 110 nm Floating Gate Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


    Original     		PDF S29DS032J S29DS032J SSTL-18 11x9mm

    psr16

    Abstract: CR10 M58LW128H VFBGA56 N-6450 electronic signature 98h
    Text: M58LW128H 128 Mbit 8Mb x16, Uniform Block, Burst 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations


    Original     		PDF M58LW128H VFBGA56 66MHz 115/25ns TBGA64 115ns psr16 CR10 M58LW128H VFBGA56 N-6450 electronic signature 98h

    nand512w3a2dn6

    Abstract: NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E
    Text: product line card Numonyx NAND flash memory Numonyx® NAND flash memory A broad offering of discrete parts to meet a variety of application requirements PRODUCT overview Density Part Number Density NAND Family Voltage Bus Width - Flash Package Type Package Dimension


    Original     		PDF NAND128W3A2BN6E TSOP48 12x20mm NAND128W3A0BN6E NAND128W3A2BDI6 NAND256W3A2BN6E nand512w3a2dn6 NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E