diode ES2J
Abstract: ES2J
Text: ES2A Thru ES2J Surface Mount Super Fast Rectifiers REVERSE VOLTAGE 50 TO 600 VOLTS FORWARD CURRENT 2.0 AMPERE P b Lead Pb -Free Features: * For Surface Mount Application * Low Reverse Current * High Current Capability Mechanical Data: * Case : Molded Plastic
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MIL-STD-202,
DO-214AA)
11-Sep-09
diode ES2J
ES2J
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6242E
Abstract: 4583 dual schmitt trigger 6242b la 4508 ic pin diagram R1100D121C AT91Bootstrap CS 5609 ARM926EJ-S ISO7816 5609 dec
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-STM
16-bits
6242E
11-Sep09
4583 dual schmitt trigger
6242b
la 4508 ic pin diagram
R1100D121C
AT91Bootstrap
CS 5609
ARM926EJ-S
ISO7816
5609 dec
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GMF05C-HSF
Abstract: LLP75-6L LLP75
Text: GMF05C-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Surge immunity acc. IEC 61000-4-5 IPPM > 12 A • Low leakage current IR < 1 A
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GMF05C-HSF
LLP75-6L
LLP75-6L
2002/95/EC
2002/96/EC
GMF05C-HSF
GMF05C-HSF-GS08
18-Jul-08
LLP75
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VBUS051BD-HD1
Abstract: LLP1006-2L VBUS051BD esdprotection
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package
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VBUS051BD-HD1
LLP1006-2L
18-Jul-08
VBUS051BD-HD1
VBUS051BD
esdprotection
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b 103g
Abstract: a 103g b 104g A 102G st65w423 101G 103G 105G 106G HER101G
Text: HER101G thru HER107G High Efficiency Rectifier Glass Passivation Junction REVERSE VOLTAGE 50-1000 VOLTS FORWARD CURRENT 1.0 AMPERE P b Lead Pb -Free Features: *Low forward voltage drop *High current capability *High reliability *High surge current capability
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HER101G
HER107G
DO-41
MIL-STD-202,
34grams
DO-41
11-Sep-09
b 103g
a 103g
b 104g
A 102G
st65w423
101G
103G
105G
106G
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303G
Abstract: diode HER 303G 305G 307g HER307g 302G 304G HER301G 11SEP
Text: HER301G thru HER307G High Efficiency Rectifier Glass Passivation Junction REVERSE VOLTAGE 50-1000 VOLTS FORWARD CURRENT 3.0 AMPERE P b Lead Pb -Free Features: *Low forward voltage drop *High current capability *High reliability *High surge current capability
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HER301G
HER307G
MIL-STD-202,
DO-201AD
DO-201AD
11-Sep-09
303G
diode HER 303G
305G
307g
HER307g
302G
304G
11SEP
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Untitled
Abstract: No abstract text available
Text: VCUT0714A-02Z Vishay Semiconductors Bidirectional Asymmetrical BiAs Single Line ESD-Protection Diode in SOD923 FEATURES • Tiny SOD-923 package • Package height < 0.4 mm 2 1 • Working range - 7 V up to + 14 V or - 14 V up to +7V • Low leakage current IR < 0.1 µA
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VCUT0714A-02Z
OD923
OD-923
2002/95/EC
2002/96/EC
VCUT0714A-02Z
VCUT0714A-02Z-GS08
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 4.5-10.5 GHz GaAs MMIC Receiver R1011-BD September 2009 - Rev 11-Sep-09 Features Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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R1011-BD
11-Sep-09
Mil-Std-883
XR1011-BD-000V
XR1011-BD-EV1
XR1011
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6242E
Abstract: ARM926EJ-S ISO7816 BMS controllers
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-STM
16-bits
6242ES
11-Sep-09
6242E
ARM926EJ-S
ISO7816
BMS controllers
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Untitled
Abstract: No abstract text available
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-Sâ
6242Eâ
11-Sep09
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XR1011-BD
Abstract: R1011-BD DM6030HK TS3332LD
Text: 4.5-10.5 GHz GaAs MMIC Receiver R1011-BD September 2009 - Rev 11-Sep-09 Features Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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Original
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R1011-BD
11-Sep-09
Mil-Std-883
XR1011-BD-000V
XR1011-BD-EV1
XR1011
XR1011-BD
R1011-BD
DM6030HK
TS3332LD
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VDC to dbm conversion
Abstract: No abstract text available
Text: 17.0-34.0 GHz GaAs MMIC Up-Converter U1010-BD September 2009 - Rev 11-Sep-09 Features Integrated Balanced Mixer, LO Buffer and LO Doubler +23.0 dBm Input Third Order Intercept IIP3 +2.0 dBm LO Drive Level 100% On-Wafer RF Testing General Description Mimix Broadband’s 17.0-34.0 GHz GaAs up-converter
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U1010-BD
11-Sep-09
VDC to dbm conversion
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . - ,- LOC A LL R IG H T S R E S E R V E D . RE VIS IO NS D IS T H D E S C R IP T IO N D1 E C R — 0 6 — 0 0 2 6 3 5
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PDF
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11SEP09
5SEP10
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DTRU - 19
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . - ,- LOC A LL R IG H T S R E S E R V E D . REVISION S D IS T H D E S C R IP T IO N ECR—0 6 —0 0 2 6 3 5 D2 REVISED PER E C O - 0 9 - 0 2 1 5 1 0
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OCR Scan
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PDF
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ECR-10-019054
11SEP09
15SEP10
DTRU - 19
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