TSDF1205F
Abstract: No abstract text available
Text: TSDF1205F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a
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TSDF1205F
OT490
D-74025
11-Sep-02
TSDF1205F
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Untitled
Abstract: No abstract text available
Text: SR Vishay Dale Wirewound Resistors, Open Air, Current Sense, Low Value FEATURES • Open air design • Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers
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PDF
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2000Hz
25mm/second
MIL-STD-202
11-Sep-02
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Untitled
Abstract: No abstract text available
Text: SR Vishay Dale Wirewound Resistors, Open Air, Current Sense, Low Value FEATURES • Open air design • Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers
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PDF
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2000Hz
25mm/second
MIL-STD-202
11-Sep-02
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TSDF1220F
Abstract: No abstract text available
Text: TSDF1220F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a
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TSDF1220F
OT490
D-74025
11-Sep-02
TSDF1220F
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MBRF2090CT
Abstract: MBR20100CT MBR2090CT MBRB20100CT MBRB2090CT MBRF20100CT
Text: MBR20100CT, MBRF20100CT & MBRB20100CT Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 20A ITO-220AB MBRF2090CT, MBRF20100CT 0.188 (4.77) 0.172 (4.36)
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MBR20100CT,
MBRF20100CT
MBRB20100CT
ITO-220AB
MBRF2090CT,
MBRF20100CT)
O-220AB
MBR2090CT,
MBR20100CT)
11-Sep-02
MBRF2090CT
MBR20100CT
MBR2090CT
MBRB2090CT
MBRF20100CT
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TSDF1250F
Abstract: No abstract text available
Text: TSDF1250F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a
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Original
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TSDF1250F
OT490
D-74025
11-Sep-02
TSDF1250F
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Untitled
Abstract: No abstract text available
Text: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . RESISTORS Model SR High-Power, Low-Value, Open-Air, Wirewound Radial Leaded Resistor FEATURES • All welded construction • High Power: 5 watts at + 70°C • Low Resistance Value: 0.004 Ω to 0.05 Ω
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2000Hz
25mm/second
MIL-STD-202
Weight/1000
11-Sep-02
VMN-PT9061-0210
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SK 09 D 08
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FÖR PUBUÒÀT10H- BY TYCO ELECTRONICS CORPORATION. LDC ALL RIGHTS RESERVES. FT REVISIONS DIST P LTR A DATE DWN APVD 9/11/02 ss CR DESCRIPTION RELEASED NOTES: A MATERIAL: HOUSING: P O L Y A M I D E 6 UL 9 ^ -V -2
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T10H----
TSB500
T5B500
11SEP02
31MAR2000
SK 09 D 08
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