MT29F2G08AAC
Abstract: SD-Card MMC AT91 5V ATMEL AT91 serial isp atmel AT91SAM-ICE
Text: ARM-Based Products Application Group AT91SAM9RL-EK Test Software Revision Table: Revision 3.0 3.1 Date June 13, 2008 August 19,2008 Comments Initial release 1.update AT91 ISP and Jlink driver 2.add LCD demo 1/11pages ARM-Based Products Application Group Table of Contents
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AT91SAM9RL-EK
1/11pages
AT91xxxxx
10/11pages
AT91SAM9RL64EK
AT91SAM9RL-EK.
11/11pages
MT29F2G08AAC
SD-Card MMC
AT91 5V
ATMEL AT91
serial isp atmel
AT91SAM-ICE
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E112081
Abstract: No abstract text available
Text: FicheE7/ASDrightangle22/05/0118:11Page2 SD D'Sub connectors - Stamped and Formed Contacts Spécifications DESCRIPTION MAIN CHARACTERISTICS RIGHT ANGLE, BOARD MOUNT CONNECTORS • A4 Style MIL footprint : UL File: E149426 • 1A Style (European footprint): UL File: E112081
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E149426
E112081
C24308
93425-HE5
E112081
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AT91SAM-ICE
Abstract: MT29F2G08AAC AD1981B SD-Card MMC at91 programmer
Text: ARM-Based Products Application Group AT91SAM9RL-EK Test Software Revision Table: Revision 3.0 3.1 3.2 Date June 13, 2008 August 19,2008 February 04,2009 Comments Initial release 1.update AT91 ISP and Jlink driver 2.add LCD demo 1.Fix the issue of LCD shakiness
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AT91SAM9RL-EK
1/11pages
AT91xxxxx
10/11pages
AT91SAM9RL64EK
AT91SAM9RL-EK.
11/11pages
AT91SAM-ICE
MT29F2G08AAC
AD1981B
SD-Card MMC
at91 programmer
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0444c2
Abstract: AT45CS1282 BA10 PA10 PA11 PA12 PA13
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • – RapidS Serial Interface: 50 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency
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336-byte
888-byte
488-byte
1056-byte
0444c2
AT45CS1282
BA10
PA10
PA11
PA12
PA13
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atmel 1138
Abstract: 1273A-04
Text: Introduction This document contains the latest information about the AVR data book and the AVR data sheets. All references to the data book refers to the August 1999 version of the “AVR RISC MICROCONTROLLER DATA BOOK”. All references to the AVR data sheets refer to the latest version of the AVR data
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24-bit
atmel 1138
1273A-04
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Product Training Module
Abstract: No abstract text available
Text: Crystals Oscillators Filters Precision Timing Magnetics Engineered Solutions WWW.ABRACON.COM WWW.ABRACON.COM Introduction Purpose: Introduce the ASG series, Fixed Frequency XO & VCXO Objectives: - Explain the benefits of the ASG series of products - Provide overview of the primary features
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11-pages
30-minutes
Si-530
FVXO-PC73BR
10MHz
50GHz
35GHz)
May-2012
CA-92688
Product Training Module
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1431T
Abstract: TF861 Autodialer 1428-TR
Text: S Toshiba TF831 PLAIN PAPER/LASER OR LAB ATO INC. RY BUYE R Test Report MID-VOLUME FACSIMILE MACHINES RECOMMENDED 8 • TE STED • Manufacturer: Toshiba America Information Systems, Inc. Irvine, CA Made in Japan Suggested retail price: $3,999, base machine; $4,498 as tested with 4-Mb
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TF831
64-level
TF831,
1434-TR
1431T
TF861
Autodialer
1428-TR
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soic16w
Abstract: wdc 1994 MLX90314 MLX90314AB SO16W
Text: MLX90314AB Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors
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MLX90314AB
11VDC;
35VDC
MLX90314
SOIC16w)
QS9000,
ISO14001
Aug/02
soic16w
wdc 1994
MLX90314
MLX90314AB
SO16W
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MLX90314
Abstract: SO16W
Text: MLX90314 Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors
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MLX90314
11VDC;
35VDC
SOIC16w)
ISO/TS16949
ISO14001
Nov/04
MLX90314
SO16W
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Tyco MCON 1.2
Abstract: 114-18022 MS-7889
Text: Application Specification Verarbeitungs-Spezifikation MCON 1.2 mm Contact System MCON 1.2 mm Kontaktsystem 114-18464 th 14 MAY 2013 Rev R Table of Contents Inhaltsverzeichnis 1.
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16MAR2012
16OCT2012
14MAY2013
11Page
Tyco MCON 1.2
114-18022
MS-7889
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Untitled
Abstract: No abstract text available
Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM H IT A C H I ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the lising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280B
Hz/83
HM5216165-10H
HM5216165-10H)
HM5216165-10/15
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Untitled
Abstract: No abstract text available
Text: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word X 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word X 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word X 4-bit X 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
HM5264165,
HM5264805,
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Untitled
Abstract: No abstract text available
Text: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.
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MSMS6V16400
152-word
4096cycles/64m$
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DQ131
Abstract: MT48LC16M16A2TG8E
Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron
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192-cycle
MT48LC64M4A2
MT48LC32M8A2
54-PIN
256Mb
256MSDRAM
DQ131
MT48LC16M16A2TG8E
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Untitled
Abstract: No abstract text available
Text: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES C lock frequency: 1 6 6 ,1 4 3 , 125, 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated sim ultaneously and
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16-MBIT)
IS42S16100
288-word
16-bit
50-Pin
DR010-0B
IS42S16100
143MHz
124MHz
IS42S16100-6T
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rft electronica
Abstract: No abstract text available
Text: HM52161 65 Series Preliminary 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs arc referred to the rising edge of the clock input. The H M 5 2 16165 is offered in 2 banks for improved performance. Features Rev. 0.0 Jul. 2 9 ,1 9 9 4
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HM52161
288-word
16-bit
HM5216165TT-10
HM5216165TT-12
HM52161657T-15
400-mii
50-pin
TTP-50D)
Hz/83
rft electronica
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Untitled
Abstract: No abstract text available
Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64
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HB526C164EN
288-word
64-bit
ADE-203-628A
16-Mbit
HM5216165TT)
24C02)
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77777AV
Abstract: R7F7
Text: H M 5 2 4 1 6 5 - 1 Preliminary 2 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. Features m Rev. 0.0 Jan. 27,1995
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072-word
16-bit
HM5241605
HM5241605TT-12
400-mil
50-pin
TTP-50D)
295/200/Kinko
M19T04?
77777AV
R7F7
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48LC8M8
Abstract: No abstract text available
Text: MICRON* I 64M b: xV n V,1,5 TCCHWLOOY.INC. S D R A M MT48LC16M4A2 - 4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 - 1 Meg x 16 x 4 banks SYNCHRONOUS DRAM F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l
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096-cycle
MT48LC16M4A2
MT48LC8M8A2
MT48LC4
54-PIN
64MSDRAM
48LC8M8
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Untitled
Abstract: No abstract text available
Text: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20, 1997 Description The HB526A264DB is a lM x 64 X 2 banks Synchronous Dynamic RAM Sm all Outline Dual In-line M emory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit SDRAM (HM5216805TT/HM5216805LTT)
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HB526A264DB
576-word
64-bit
ADE-203-607
16-Mbit
HM5216805TT/HM5216805LTT)
24C02)
144-pin
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Nippon capacitors
Abstract: PAL/flyback BSH 12 n5
Text: HB52A48DB Series, HB52A88DC Series HB52A48DB 32 MB Unbuffered SDRAM S.O.DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M x 16 components HB52A88DC 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 64-bit, 66 MHz Memory Bus, 2-Bank Module (8 pcs of 4 M x 16 components)
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HB52A48DB
HB52A88DC
64-bit,
ADE-203-874B
HM5264165TT)
Nippon capacitors
PAL/flyback BSH 12 n5
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eeprom 24c02
Abstract: RD301 ASJ PTE
Text: HB526C272EN-10IN, HB526C472EN-10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15, 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line M emory Module) family, and
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HB526C272EN-10IN,
HB526C472EN-10IN
576-word
72-bit
ADE-203-693C
HB526C272EN,
HB526C472EN
HB526C272EN
eeprom 24c02
RD301
ASJ PTE
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Nippon capacitors
Abstract: No abstract text available
Text: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629B Z Rev. 2.0 Mar. 17, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C264EN
HB526C464EN
576-word
64-bit
ADE-203-629B
HB526C264EN,
Nippon capacitors
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