Untitled
Abstract: No abstract text available
Text: ｓ DIODE 11E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage
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Abstract: No abstract text available
Text: 11E22A Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)220m P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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11E22A
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Untitled
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Key components – Terminal to RJ45 converter Series/Type: Ordering code: B44066 B44066R1*11E230 Date: Version: November 2009 1 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
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B44066
B44066R1
11E230
1xRJ45-BR6000
2xRJ45-BR6000
2xRJ45-MMI6000
BR6000,
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Untitled
Abstract: No abstract text available
Text: 11E1 - 11E2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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DO-41
UL94V-O
MIL-STD-202,
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HC11E20
Abstract: MC68HC11 EB285 MC68HC MC68HC11E20 MC68HC711E20 DEFINE DSA003656
Text: Order this document by EB285/D Motorola Semiconductor Engineering Bulletin EB285 C Macro Definitions for the MC68HC 7 11E20 By John Bodnar Austin, Texas Introduction With more microcontroller users moving to high level languages like C, macro definition files like the one outlined in this document can speed
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EB285/D
EB285
MC68HC
11E20
hc11e20h
MCU11
hc11e20
MC68HC11
EB285
MC68HC11E20
MC68HC711E20
DEFINE
DSA003656
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HC11E20
Abstract: MC68HC11 EB285 MC68HC MC68HC11E20 MC68HC711E20 0X1000
Text: Freescale Semiconductor, Inc. Order this document by EB285/D Motorola Semiconductor Engineering Bulletin Freescale Semiconductor, Inc. EB285 C Macro Definitions for the MC68HC 7 11E20 By John Bodnar Austin, Texas Introduction With more microcontroller users moving to high level languages like C,
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EB285/D
EB285
MC68HC
11E20
hc11e20h
MCU11
hc11e20
MC68HC11
EB285
MC68HC11E20
MC68HC711E20
0X1000
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br7000
Abstract: BR6000 EPCOS br6000 MMI6000 epcos br7000 2XRJ45 RJ485 BR7000-SOFT BR600 RJ45 LAN jack
Text: Film Capacitors – Power Factor Correction Key components – Terminal to RJ45 converter Series/Type: Ordering code: B44066 B44066R1*11E230 Date: Version: November 2009 1 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
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B44066
B44066R1
11E230
1xRJ45-BR6000
2xRJ45-BR6000
2xRJ45-MMI6000
BR6000,
br7000
BR6000
EPCOS br6000
MMI6000
epcos br7000
2XRJ45
RJ485
BR7000-SOFT
BR600
RJ45 LAN jack
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Untitled
Abstract: No abstract text available
Text: 11E22A230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)220m P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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11E22A230
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11E2
Abstract: 021g
Text: ｓ DIODE 11E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage
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32176 Group PWM CODE
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ09B0067-0110
Appendix4-30
REJ09B0067-0110
32176 Group PWM CODE
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bf91
Abstract: 68HC711EA9 MC68HC11PA8 transistor bf65 BE75 68HC11PH8 8D-13 JCOP BE73 MC68HC11PH8
Text: Order this document by EB422/D Motorola Semiconductor Engineering Bulletin EB422 Enhanced M68HC11 Bootstrap Mode By Steven McAslan CSIC Development Systems Motorola Ltd., East Kilbride, Scotland Introduction Motorola has enhanced the capability of the special bootstrap mode
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EB422/D
EB422
M68HC11
bf91
68HC711EA9
MC68HC11PA8
transistor bf65
BE75
68HC11PH8
8D-13
JCOP
BE73
MC68HC11PH8
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B605
Abstract: HC711E9 S085 b673 power transistor IC1 7812 b673 transistor SPGMR11 AN1060 MC68HC811E2FN2 M68HC11
Text: M68HC11E Family Data Sheet M68HC11 Microcontrollers M68HC11E/D Rev. 5 6/2003 MOTOROLA.COM/SEMICONDUCTORS MC68HC11E Family Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier
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M68HC11E
M68HC11
M68HC11E/D
MC68HC11E
B605
HC711E9
S085
b673 power transistor
IC1 7812
b673 transistor
SPGMR11
AN1060
MC68HC811E2FN2
M68HC11
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Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5
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11b3 DIODE
Abstract: diagrams hitachi ecu RTD 1185 DATA SHEET M32R RTD rtd ic 1117 3.3 analog devices 118a ECU 206 FD31 hitachi ecu datasheet
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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32-bit
M32R/E
M32R/ECU
11b3 DIODE
diagrams hitachi ecu
RTD 1185 DATA SHEET
M32R RTD
rtd ic
1117 3.3
analog devices 118a
ECU 206
FD31
hitachi ecu datasheet
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 05.00 [00.197] REV. A B PA R T N U M B E R REV. S S P — 11E276U110 B E.C.N. NUMBER AND REVISION COMMENTS DATE 7 .1 4 .0 4 E 1 1 1 49 EC N § 11148 1 1 .3 0 .0 5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25T PARAMETER MIN TYP PEAK WAVELENGTH
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11E276U110
E11149
100jjA
626nm
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Untitled
Abstract: No abstract text available
Text: ia / ioo ~ SILICON RECTIFIER DIODE 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size vt £_ ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7 .027 0.5(.020) ° High Surge Capability DIA 2 .7(.106) d i a MAX U1A 27 (1 .06 ) MIN » 26mm and 52mm Inside Tape Spacing
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bblS123
G0Q23Ã
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MA7041
Abstract: 1MX1
Text: IB M 11 D2360BD IB M 11E2360BD 2M x 36 D R A M M odule Features • Low active current dissipation • All inputs & outputs are fully TTL & CM O S compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR • 1024 refresh cycles distributed across 16ms
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D2360BD
11E2360BD
72-Pin
110ns
130ns
11D2360BD
MMDS23DSU-00
IBM11D2360BD
11E2360BD
03H7142
MA7041
1MX1
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11E1
Abstract: 11E2 11E4
Text: SILICON RECTIFIER DIODE 11E1 11E2 11E4 ia / 1 0 0 ~ 4 0 0 v FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS \ type Voltage Rating
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IA/100
52mra
bbl5123
11E1
11E2
11E4
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11E2
Abstract: 11E4 11E1
Text: SILICON RECTIFIER DIODE i a / ioo~ 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size v j/— ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7C027 0.5 .020) High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available DIA 2.7(.106)d i a
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bblS123
11E2
11E4
11E1
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D2320B
Abstract: No abstract text available
Text: IB M 11 D2320B C IB M 11E2320BC 2M x 32 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column Optimized for use in byte-write non-parity appli
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D2320B
11E2320BC
72-Pin
110ns
130ns
IBM11D2320BC
03H7146
MMDS03DSU-02
11D2320BC
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Untitled
Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE ia / io o ~ 4 11E 1 11E2 11E4 oov FEATURES • Miniature Size °L o w F o r w a r d Voltage Drop °L o w R e v e r s e Leakage Current °H i g h Surge Capability °2 6 m m a n d 5 2 m m I n s i d e Package Available Tape Spacing MAXIMUM R A T IN G S
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MA7805
Abstract: BC128 2S746 BSY37 2S745 2SC183 OC740 PMT120 SAC40
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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Untitled
Abstract: No abstract text available
Text: IBM11 D1475B IBM11 E1475B IBM11D2475B 11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: : -6R : rac RAS Access Tim e ; 60ns : tc A C CAS Access Tim e : 18ns : I U a I rc t|HPC • High Performance CMOS process
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IBM11
D1475B
E1475B
IBM11D2475B
IBM11E2475B
72-Pin
104ns
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10M60
Abstract: 10M15 10M10 10EF2 10M50 10ELS1 10ELS2 10ELS4 10ELS6 10KF10
Text: - 38 - A 1& £ m [Si # is & m æ |SJ # tt * ffi £ £ Vrsm Vrrm Vr IFH Tfc# V (V) (V) (A) (°C) Io,If * (A) CC> IF S M T&f* Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi ( ü A) V r (V) T(°C) 10 10 10 10 10 200 100 20 0 40 0 600 7 ’')y
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10EF2
200ns
10ELS1
150ns
10ELS2
10ELS4
10ELS6
10M60
10M15
10M10
10EF2
10M50
10KF10
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