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    11APR2003 Search Results

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    CR10

    Abstract: J-STD-020B M58WR128FB VFBGA56
    Text: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128FT M58WR128FB 66MHz CR10 J-STD-020B M58WR128FB VFBGA56

    M29DW324D

    Abstract: M76DW52004TA Stacked 4MB NOR FLASH
    Text: M76DW52004TA M76DW52004BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot


    Original     		PDF M76DW52004TA M76DW52004BA 32Mbit 256Kb LFBGA73 0020h M76DW52004TA: 225Ch M76DW52004BA: M29DW324D M76DW52004TA Stacked 4MB NOR FLASH

    IFR 630 MF

    Abstract: RM5630
    Text: THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 2000 RELEASED BY TYCO ELECTRONICS CO RPORATION FOR ALL 2000 PUBLICATION RIGHTS LOC RESERVED. SERIES 300 B DESCRIPTION P A R T NUMBER CHANGED TO T Y C O 11APR2003 ACK GF A2 1 REL EASE P A PER 0 9 SE P20 03 ACK GF


    OCR Scan     		PDF 11APR2003 300-09-100M 300-10-100M 300-15-100M 300-20-100M 300-25-100M 300-26-100M 300-34-100M 300-37-100M 300-40-100M IFR 630 MF RM5630