IRFZ48 mosfet driver
Abstract: No abstract text available
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-262)
O-263)
2011/65/EU
IRFZ48 mosfet driver
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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SQM25N15-52
AEC-Q101
O-263
O-263
SQM25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019
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SQM120N04-1m9
AEC-Q101
O-263
O-263
SQM120N04-1m9-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQM85N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085 ID (A)
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SQM85N03-06P
AEC-Q101
2002/95/EC
O-263
O-263
SQM85N03-06P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUM50P10-42
2002/95/EC
O-263
SUM50P10-42-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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IRF820S,
SiHF820S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM09N20-270
2002/95/EC
O-263
SUM09N20-270-E3
25trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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IRFBC40AS,
SiHFBC40AS
O-263)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package
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SUM60N10-17
2002/95/EC
O-263
SUM60N10-17-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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IRF840S,
SiHF840S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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sum75n06
Abstract: No abstract text available
Text: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUM75N06-09L
O-263
SUM75N06-09L-E3
10trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sum75n06
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Untitled
Abstract: No abstract text available
Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature
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IRF520S,
SiHF520S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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IRF620S,
SiHF620S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17
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SiHB15N60E
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance
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SQM50P08-25L
AEC-Q101
O-263
O-263
SQM50P08-25L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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Original
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PDF
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SQM60N06-15
AEC-Q101
2002/95/EC
O-263
O-263
SQM60N06-15-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET
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SQM120N03-1m5L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120N03-1m5L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFZ48RL
Abstract: SiHFZ48RL
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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Original
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PDF
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-263)
O-262)
11-Mar-11
IRFZ48RL
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Untitled
Abstract: No abstract text available
Text: SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 100 RDS(on) () at VGS = 10 V 0.0105
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SQM100N10-10
AEC-Q101
O-263
SQM100N10-10-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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Original
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PDF
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SQM60N06-15
AEC-Q101
2002/95/EC
O-263
SQM60N06-15-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097
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SQM35N30-97
AEC-Q101
O-263
SQM35N30-97-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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MIL-PRF-8805/98
Abstract: 68AT22-5 MIL-PRF-8805 TL-10632 15PA313-AT
Text: Jl F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER -CORROSION RESISTANT LEVER, BUSHING AND BRACKET FAA-PMA A 4- 1 5 /3 2 - 3 2 NS THREAD TO WITHIN .0 6 2 OF SHOULDER B 14 0012387 BY CHECK 11APR05 AK CHANGED DVM 68 A T 2 2 - 1 1,2,3,4 5,6,7,8 NONE ALL 5,6*7,8 1,2,3,4
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TL-10632)
10SEP74
17SEP74
5M-1994
68AT22
MIL-PRF-8805/98
68AT22-5
MIL-PRF-8805
TL-10632
15PA313-AT
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Untitled
Abstract: No abstract text available
Text: 4 COPYRIGHT 2 3 THIS DRAWING IS UNPUBLISHED. 1 I— RELEASED FOR PUBLICATION- DIST J-ALL RI-5WTS RESERVED. BY TYCO ELECTRONICS CORPORATION, - ES 00 "DATE RELEASED E C R -0 5 -0 0 1 438 11APR05 WIN I APVD J.Z I.E L 2 . 9 0 M AX TY P
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11APR05
31MAR2000
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