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    115 MOSFET Search Results

    115 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    115 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J 115 mosfet

    Abstract: sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET
    Text: 2N7002 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)


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    PDF 2N7002 60VOLTS, 01-Jun-2002 J 115 mosfet sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET

    sot-363 n-channel mosfet

    Abstract: 2N7002DW Small Signal MOSFET
    Text: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol


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    PDF 2N7002DW 60VOLTS, OT-363 026TYP 65TYP) 021REF 01-Jan-2006 500mA sot-363 n-channel mosfet 2N7002DW Small Signal MOSFET

    2N7002T

    Abstract: Small Signal MOSFET
    Text: 2N7002T 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)


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    PDF 2N7002T 60VOLTS, 01-Jun-2002 2N7002T Small Signal MOSFET

    Untitled

    Abstract: No abstract text available
    Text: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W


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    PDF STB10NK60Z, STP10NK60Z STW10NK60Z O-220, O-220FP, O-247 STB10NK60Z-1 STB10NK60Z STP10NK60ZFP

    p10nk60

    Abstract: p10nk60zfp P10NK60Z p10nk W10NK60Z transistor P10NK60ZFP B10NK60Z STB10NK60Z p10nk6 STB10NK60ZT4
    Text: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W


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    PDF STB10NK60Z, STP10NK60Z STW10NK60Z O-220, O-220FP, O-247 STB10NK60Z-1 STB10NK60Z STP10NK60ZFP p10nk60 p10nk60zfp P10NK60Z p10nk W10NK60Z transistor P10NK60ZFP B10NK60Z STB10NK60Z p10nk6 STB10NK60ZT4

    p10nk60z

    Abstract: P10NK60ZFP w10nk60z stp10nk60
    Text: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W


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    PDF STB10NK60Z, STP10NK60Z STW10NK60Z O-220, O-220FP, O-247 STB10NK60Z-1 STB10NK60Z STP10NK60ZFP p10nk60z P10NK60ZFP w10nk60z stp10nk60

    sot-23 MARKING CODE 70.2

    Abstract: 2N7002L 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT3G
    Text: 2N7002L Preferred Device Small Signal MOSFET 60 V, 115 mA N−Channel SOT−23 http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish V BR DSS RDS(on) MAX ID MAX 60 V 7.5 mW @ 10 V, 500 mA 115 mA MAXIMUM RATINGS


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    PDF 2N7002L OT-23 2N7002L/D sot-23 MARKING CODE 70.2 2N7002L 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT3G

    TCP202 10x

    Abstract: TDS700 P6243 11A32 TCP0030 TCPA400 TCPA300 Tektronix A622 Tektronix* A622 probe TCP404XL
    Text: 115-2012:QuarkCatalogTempNew 8/13/12 5:11 PM Page 115 1 Active and Current Probes TEST & MEASUREMENT Active Probes Accurate High-Frequency Measurements with Reduced Probe Loading For testing high-impedance, high-frequency circuit elements which demand minimal loading, our portfolio of active voltage probes provides the proper signal bandwidth


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    PDF P6205 TCPA300 TCPA400 TCP303, TCP305 TCP312 TCP404XL TCPA400 TCP202 10x TDS700 P6243 11A32 TCP0030 Tektronix A622 Tektronix* A622 probe

    joystick PS2

    Abstract: W83627HF-AW winbond w83627hf-aw 8893 single chip tv processor W83627HF ps2 joystick acer battery pinout W83627HF-PW MOA2 amikey American Megatrends
    Text: W83627HF/F WINBOND I/O W83627HF/F Data Sheet Revision History Version Pages Dates Version on Web Main Contents Not released For internal use only 1 n.a. 09/25/98 0.50 2 88-93,102,105, 139,151,153 11/10/98 0.51 3 90-93;113-115 01/11/99 0.52 4 90,91,113-115,


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    PDF W83627HF/F W83627HF/F 1N4148 W83627HF joystick PS2 W83627HF-AW winbond w83627hf-aw 8893 single chip tv processor ps2 joystick acer battery pinout W83627HF-PW MOA2 amikey American Megatrends

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002EPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE


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    PDF 2N7002EPT SC-70/SOT-323) SC-70/SOT-323 200mA

    2N7002EGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE


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    PDF 2N7002EGP SC-70/SOT-323 SC-70/SOT-323) 200mA 2N7002EGP

    2N7002GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)


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    PDF 2N7002GP OT-23 OT-23) 200mA 2N7002GP

    2N7002PT

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)


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    PDF 2N7002PT OT-23 OT-23) 200mA 2N7002PT

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers


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    PDF OD-123+ FM120-M+ 2N7002DTHRU FM1200-M+ OD-123H 0197FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH

    marking 702

    Abstract: 2N7002LT ON
    Text: WILLAS FM120-M+ THRU 2N7002LT1 FM1200-M+ Small Signal MOSFET 115 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


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    PDF OD-123+ FM120-M+ 2N7002LT FM1200-M+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH marking 702 2N7002LT ON

    l2n7002dw1t1g

    Abstract: CASE 419B-02 sot363 ON Marking DS
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value


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    PDF L2N7002DW1T1G SC-88 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner l2n7002dw1t1g CASE 419B-02 sot363 ON Marking DS

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage


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    PDF L2N7002DMT1G 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 80KPCS/Inner OT-723 OD-723

    marking 72

    Abstract: 10V 50mA zero voltage switch 2N7002T
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2N7002T MOSFET Plastic-Encapsulate Transistors SOT-523 N-Channel FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25℃) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage


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    PDF OT-523 2N7002T 500mA 200mA 200mA marking 72 10V 50mA zero voltage switch 2N7002T

    k72 transistor

    Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


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    PDF OT-363 2N7002DW width300 k72 transistor transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td

    L2N7002DMT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring


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    PDF L2N7002DMT1G S-L2N7002DMT1G AEC-Q101 SC-74 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel L2N7002DMT1G

    L2N7002M3T5G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    PDF L2N7002M3T5G S-L2N7002M3T5G AEC-Q101 OT-723 L2N7002M3T5G

    marking 72

    Abstract: 2N7002T
    Text: SOD-523 Plastic-EncapsulateTransistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


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    PDF OD-523 2N7002T OT-523 500mA 200mA 200mA marking 72 2N7002T

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


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    PDF NTMFS4845N AND8195/D NTMFS4845N/D

    9435DY

    Abstract: 1153-B
    Text: LT C 115 9 /LTC 115 9 -3 .3 /LT C 1159-5 l im TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ O TUR€ S D C S C R IP T IO n • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20pA Supply Current in Shutdown


    OCR Scan
    PDF 16-Lead 551fi4b on-77 DD116SS 5C179 9435DY 1153-B