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    3M 3M-4611-4--X-10.5--25

    TAPE DBL SIDED GRAY 4"X10 1/2"
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    DigiKey 3M-4611-4--X-10.5--25 Bulk 1
    • 1 $197.5
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    CR Seals 101X114X10 HMSA1 R

    Double Lip Oil Seal, I.D. 101 mm, O.D. 114 mm, Thickness 10 mm | CR Seals (SKF) 101X114X10 HMSA1 R
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    RS 101X114X10 HMSA1 R Bulk 4 Weeks 1
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    Dichtomatik 100X114X10SB (ALTERNATE: 75001650)

    Oil Seal, 100mm ID, 114mm OD, 10mm Width | Dichtomatik 100X114X10SB
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    RS 100X114X10SB (ALTERNATE: 75001650) Bulk 3 Weeks 1
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    Dremec DE 114X10

    Screwed spacer sleeve; 10mm; Int.thread: M3; hexagonal; brass
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    TME 114X10 13,473 10
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    Compex Corporation CSM-35-114X103X10-S8-2R47-K

    COMPEX CSM-35-114X103X10-S8-2R47-K CAP 2.47pf 10%
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    ES Components CSM-35-114X103X10-S8-2R47-K
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    114X10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDP2670

    Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


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    PDF FDP2670/FDB2670 FDP2670 D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
    Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF FDP6644/FDB6644 CBVK741B019 EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L

    high voltage mosfet, to-220 case

    Abstract: No abstract text available
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 high voltage mosfet, to-220 case

    Untitled

    Abstract: No abstract text available
    Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDP6690S/FDB6690S FDP6690S FDP6690S/FDB6690S FDP6035AL/FDB6035AL

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDP6060 NDB6060

    T0-263

    Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
    Text: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage


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    PDF FDP4020P/FDB4020P O-220 O-263 T0-263 CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220

    FDB7045L

    Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
    Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF FDP7045L/FDB7045L FDB7045L CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L

    TO220 Semiconductor Packaging

    Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
    Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDP6676/FDB6676 TO220 Semiconductor Packaging CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild

    zener diode 3.0 b2

    Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
    Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDP7050 NDB7050 zener diode 3.0 b2 m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


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    PDF NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.


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    PDF FDP5645/FDB5645

    FDP5680

    Abstract: No abstract text available
    Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features • 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters


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    PDF FDP5680/FDB5680 FDP5680

    Untitled

    Abstract: No abstract text available
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


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    PDF NDP6060L NDB6060L

    MOSFET and parallel Schottky diode

    Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB6644S FDP6644 FDP7060

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
    Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDP7061L NDB7061L zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L

    m 9835

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L NDP7060
    Text: May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF NDP7060 NDB7060 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
    Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF NDP7051 NDB7051 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L Polycarbonate

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
    Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDP7061L NDB7061L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L

    50s MARKING CODE

    Abstract: FDP7030BL FDP7030BLS MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L
    Text: FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDP7030BLS FDB7030BLS FDP7030BLS FDP7030BL 50s MARKING CODE MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L

    FDP6030BL

    Abstract: m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L
    Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF FDP6030BL/FDB6030BL FDP6030BL m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


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    PDF FDP2570/FDB2570 CBVK741B019 EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions

    corrugated box spec

    Abstract: TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852
    Text: TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figure 1.0 Packaging Description: TO-220 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative


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    PDF O-220 530mm 130mm 114mm 102mm F9852 NDP4060L corrugated box spec TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852

    CBVK741B019

    Abstract: EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L
    Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF FDP6030BL/FDB6030BL CBVK741B019 EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L

    2539a

    Abstract: No abstract text available
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


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    PDF FDP2570/FDB2570 2539a