Untitled
Abstract: No abstract text available
Text: DATA SHEET 256M bits SDRAM Bare Chip ECS2532EECN-A 8M words x 32 bits Features • Density: 256M bits • Organization 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.)
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ECS2532EECN-A
111MHz
cycles/64ms
M01E0107
E0697E50
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LBS11101
Abstract: No abstract text available
Text: 111MHz SAW Filter 3MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number:LBS11101 www.sipatsaw.com Specifications Parameter Unit Minimum Typical Maximum Center Frequency MHz 111.2 111.3 111.4 Insertion Loss
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111MHz
LBS11101
LBS11101
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1232ECCN-A 4M words x 32 bits Features • Density: 128M bits • Organization 1M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.)
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ECS1232ECCN-A
111MHz
cycles/64ms
M01E0107
E0780E20
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Untitled
Abstract: No abstract text available
Text: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the
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K4M28163PF
16Bit
54CSP
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Untitled
Abstract: No abstract text available
Text: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
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K4M64163PH
16Bit
54CSP
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K4M56163PG
Abstract: 54-FBGA
Text: K4M56163PG - R B E/G/C/F Mobile SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the
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K4M56163PG
16Bit
54FBGA
54-FBGA
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K4M283233H
Abstract: No abstract text available
Text: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4M283233H
32Bit
90FBGA
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Untitled
Abstract: No abstract text available
Text: mult_vgen_v1.0.fm Page 1 Wednesday, October 13, 1999 9:03 AM Variable Parallel Virtex Multiplier V1.0.2 October 15, 1999 Product Specification R Xilinx Inc. 2100 Logic Drive San Jose, CA 95124 Phone: +1 408-559-7778 Fax: +1 408-559-7114 E-mail: coregen@xilinx.com
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LF9502
Abstract: LMU217 ACCM 5 pin digital video mixer - tbc power supply 5 Volt LF3347 9027 scl110 LF3310 LF3311
Text: Company Profile LOGIC Devices Incorporated develops and markets high-performance integrated circuits that are utilized in a wide range of video and medical imaging processing, telecommunications, computing and military smart weapon applications. LOGIC Devices is commited to providing its customers with the highest performing
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2002Short
LF3310
LF3311
LF9502
LMU217
ACCM 5 pin
digital video mixer - tbc
power supply 5 Volt
LF3347
9027
scl110
LF3310
LF3311
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PLSI 1016-60LJ
Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density
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1016E
1032E
20ters
48-Pin
304-Pin
PLSI 1016-60LJ
PAL 007 pioneer
pal16r8 programming algorithm
PAL 008 pioneer
lattice 1016-60LJ
ISP Engineering Kit - Model 100
PLSI-2064-80LJ
GAL16v8 programmer schematic
GAL programming Guide
ispLSI 2064-80LT
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24-Pin Plastic DIP
Abstract: e2cmos technology pioneer corporation
Text: Introduction to ispGDXV , ispGDX and ispGDS Families TM TM TM Introduction Lattice Semiconductor Corporation, the pioneer of nonvolatile E2CMOS in-system programmable ISP logic, has now expanded the application of ISP PLDs to include programmable switching, interconnect and jumper functions with the ispGDX and the ispGDS devices. In-system
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111MHz
100-Pin
160-Pin
176-Pin
208-Pin
272-Ball
208-Ball
388-Pin
ispGDX80A
ispGDX80V
24-Pin Plastic DIP
e2cmos technology
pioneer corporation
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22V10 PAL CMOS device
Abstract: Pal programming 22v10 29MA16 Vantis GAL16V8 16v8d 22v10 pal 20LV8D 16v8 PLD 74xx244 20V8
Text: Introduction to GAL and PAL Devices ® output drive GAL16VP8 and GAL20VP8 , “zero power” operation (GAL16V8Z/ZD and GAL20V8Z/ZD), and insystem programmability (ispGAL22V10). Overview Lattice/Vantis, the inventor of the Generic Array Logic (GAL®) and Programmable Array Logic™ (PAL®) families of low density, E2CMOS® PLDs is the leading supplier
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GAL16VP8
GAL20VP8)
GAL16V8Z/ZD
GAL20V8Z/ZD)
ispGAL22V10)
GAL22V10,
PALCE22V10Q
PALCE22V10Z
ispGAL22V10
PALCE24V10
22V10 PAL CMOS device
Pal programming 22v10
29MA16
Vantis GAL16V8
16v8d
22v10 pal
20LV8D
16v8 PLD
74xx244
20V8
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M12S16161A
Abstract: M12S16161A-7BG M12S16161A-7TG
Text: ESMT M12S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3
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M12S16161A
16Bit
M12S16161A
M12S16161A-7BG
M12S16161A-7TG
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K4M56323
Abstract: K4M56323PG-F
Text: K4M56323PG-F H E/G/C/F Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the
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K4M56323PG-F
32Bit
90FBGA
K4M56323PG
K4M56323
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EDS2532EEBH-9A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532EEBH-9A 8M words x 32 bits Description Pin Configurations The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the
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EDS2532EEBH-9A
EDS2532EEBH
90-ball
111MHz
M01E0107
E0617E40
EDS2532EEBH-9A
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k4m641633
Abstract: K4M641633K 54balls
Text: K4M641633K - R B N/G/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M641633K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
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K4M641633K
16Bit
54FBGA
k4m641633
54balls
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adv7499
Abstract: adv7402a LT 525I ADV7402 ADV7403 l e d colour tv circuit diagram P2401 av btr hex map 2N101 720P
Text: a ADV7403 Integrated Multi-Format SDTV/HDTV Video Decoder and RGB Graphics Digitizer DATASHEET MANUAL January 2007 Confidential NDA Required ADV7403 1 INTRODUCTION . 1
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ADV7403
adv7499
adv7402a
LT 525I
ADV7402
ADV7403
l e d colour tv circuit diagram
P2401
av btr hex map
2N101
720P
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Untitled
Abstract: No abstract text available
Text: N128R3225GAK2 1M x 32Bit x 4Banks Double Data Rate Synchronous DRAM DISCRIPTION The N128R3225GAK2 is 134,217,728 bits of double data rate synchronous dynamic RAM organized as 4 x 1,048,576 bits by 32 I/Os. Synchronous features with Data Strobe allow extremely high performance up to 400M bps/pin. I/O transactions are possible on both
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N128R3225GAK2
32Bit
N128R3225GAK2
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pioneer corporation
Abstract: No abstract text available
Text: Introduction to ispGDXV, ispGDX and ispGDS Families ® ® November 2003 Introduction Lattice Semiconductor Corporation, the pioneer of non-volatile E2CMOS® in-system programmable ISP logic, has now expanded the application of ISP PLDs to include programmable switching, interconnect and jumper functions with the ispGDX and the ispGDS devices. In-system programmability allows for real-time programming, less
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16-bit
100-Pin
160-Pin
176-Pin
208-Pin
208-Ball
272-Ball
388-Pin
ispGDX80A
ispGDX80VA
pioneer corporation
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PDF
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LF3320
Abstract: LF3321
Text: LF3321 Horizontal Digital Image Filter DEVICES INCORPORATED Improved Performance FEATURES Selectable 16-bit Data Output with UserDefined Rounding and Limiting Supports Interleaved Data Streams Supports Decimation up to 16:1 for Increasing Number of Filter Taps
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LF3321
16-bit
12-bit
24-bit)
32-Tap
12-bit,
CFA11
CFA10
ROUT11
ROUT10
LF3320
LF3321
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LF3311
Abstract: 743H LF3310 LF3320 RV15 VCF5 VCF9
Text: LF3311 Horizontal / Vertical Digital Image Filter DEVICES INCORPORATED Improved Performance FEATURES 8 Vertical Filter Taps Two Operating Modes: Dimensionally Separate and Orthogonal Supports Interleaved Data Streams Horizontal Filter Supports Decimation up to
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LF3311
12-bit
12-bit,
DIN11
DIN10
HCF11
HCF10
311-A
LF3311
743H
LF3310
LF3320
RV15
VCF5
VCF9
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oneDRAM
Abstract: 133MHz 640M 111MHz KJXX
Text: One-DRAMTM Code Information 1/2 Last Updated : August 2009 KJXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. Package (AG01000 PKG SPEC Reference) A : FBGA (Lead-Free, Halogen-Free) S : FBGA (Lead-Free) 1. Memory (K) 2. OneDRAMTM : J 13. Temp, Power
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AG01000
8K/64ms
x16/x16
x32/x16
x16/x32
x32/x32
100MHz/100
oneDRAM
133MHz
640M
111MHz
KJXX
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xilinx TURBO decoder
Abstract: DS275 Turbo Code LogiCORE IP License Terms XC2V500 XC2VP20 Turbo decoder Xilinx RSC11
Text: 3GPP2 Turbo Decoder v1.0 DS275 April 28, 2005 Product Specification Features Applications • Drop-in module for Spartan -3, Spartan-3E, This version of the TCC Turbo Convolution Code decoder is designed to meet the 3GPP2 mobile communication system specification [1].
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DS275
CDMA2000/3GPP2
xilinx TURBO decoder
Turbo Code LogiCORE IP License Terms
XC2V500
XC2VP20
Turbo decoder Xilinx
RSC11
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION P L D 2 2 V 1 0 -7 High Performance 10-Macrocell CMOS PLD • High Speed Upgrade to BiCMOS/Bipolar 22V 10 and CMOS Equivalents ■ Global Asynchronous Clear and Synchronous Preset P-terms. ■ tpp 7.5ns, 111MHz with Feedback ■ 1-Micron CHMOS EPROM Technology
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10-Macrocell
111MHz
15MHz
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