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    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original
    TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR041105 PDF

    voltage drop circuit from 220V to 10V

    Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This


    Original
    TP5322 110pFmax. -100mA -200mA DSFP-TP5322 A042005 voltage drop circuit from 220V to 10V SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original
    TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR011905 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs b v dss/ R d S ON b v dgs (max) 18V 2.5Q If Ordering Information Order Number /Package TO-243AA* Dice+ VgS (th)* (max) 250mA 1.0V TN2501N8 TN2501ND ^S creening to 0.8V available. *S am e as SO T-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.


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    TN2501 O-243AA* TN2501N8 TN2501ND 250mA 110pFm TN2501 PDF