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    110NS Search Results

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    110NS Price and Stock

    STMicroelectronics STL110NS3LLH7

    MOSFET N-CH 30V 120A POWERFLAT
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    DigiKey STL110NS3LLH7 Cut Tape 36 1
    • 1 $1.9
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    STL110NS3LLH7 Digi-Reel 36 1
    • 1 $1.9
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    STL110NS3LLH7 Reel 3,000
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    IDEC Corporation ABD110N-S

    PUSHBUTTON 30MM
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    Component Electronics, Inc ABD110N-S 1
    • 1 $15.38
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    IDEC Corporation ABS110N-S

    (TWS)
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    DigiKey ABS110N-S Bulk 1
    • 1 $23.68
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    Mouser Electronics ABS110N-S
    • 1 $18.51
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    RS ABS110N-S Bulk 1
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    Master Electronics ABS110N-S
    • 1 -
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    • 100 $12.71
    • 1000 $11.69
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    Sager ABS110N-S 1
    • 1 $16.16
    • 10 $16.16
    • 100 $13.85
    • 1000 $13.47
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    IDEC Corporation AOD110N-S

    PUSHBUTTON 30MM
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    IDEC Corporation ABFD110N-S

    PUSHBUTTON 30MM
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    110NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RURG30100

    Abstract: RURG3070 RURG3080 RURG3090
    Text: S E M I C O N D U C T O R RURG3070, RURG3080, RURG3090, RURG30100 30A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <110ns JEDEC STYLE 2 LEAD TO-247 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C


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    RURG3070, RURG3080, RURG3090, RURG30100 110ns O-247 RURG3090 RURG30100 RURG3070 RURG3080 PDF

    40N90C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


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    IXYH40N90C3 IC110 110ns O-247 062in. 40N90C3D1 PDF

    SL32

    Abstract: No abstract text available
    Text: SL32 S/T 4B8M2A-Axx 8M X 32 DRAM FPM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL32(S/T)4B8M2A-A60 60ns 15ns 110ns SL32(S/T)4B8M2A-A70 70ns 20ns 130ns SL32(S/T)4B8M2A-A80 80ns 20ns


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    4B8M2A-A60 110ns 4B8M2A-A70 130ns 4B8M2A-A80 150ns cycles/32ms 24-pin A0-A10 SL32 PDF

    M29KW032E

    Abstract: TFBGA48
    Text: M29KW032E 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ■ ACCESS TIME: 90, 110ns ■ PROGRAMMING TIME


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    M29KW032E 110ns TSOP48 TFBGA48 0020h 88ACh M29KW032E TFBGA48 PDF

    STI324000-60

    Abstract: STI324000-70 STI324000-80
    Text: STI324000 4M X 32 DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC STI324000-60 60ns 15ns 110ns STI324000-70 70ns 20ns 130ns STI324000-80 80ns 20ns 150ns SiliconTech’s STI324000 is a 4M bits x 32 Dynamic RAM high


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    STI324000 110ns STI324000-70 130ns STI324000-80 STI324000 24-pin 72-pin STI324000-60 STI324000-60 STI324000-70 STI324000-80 PDF

    SL32

    Abstract: SL32S4A1M1A-A60 SL32T4A1M1A-A60 4A1M1A-A70
    Text: SL32 S/T 4A1M1A-A60 1M X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC SL32(S/T)4A1M1A-A60 60ns 15ns 110ns SL32(S/T)4A1M1A-A70 70ns 20ns 130ns SL32(S/T)4A1M1A-A80 80ns 20ns 150ns tRAC • • • • • • • •


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    4A1M1A-A60 4A1M1A-A60 110ns 4A1M1A-A70 130ns 4A1M1A-A80 20-pin 72-pin 150ns SL32 SL32S4A1M1A-A60 SL32T4A1M1A-A60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX1600C9D3K6/12GX 12GB 2GB 256M x 64-Bit x 6 pcs. DDR3-1600MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)


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    KHX1600C9D3K6/12GX 64-Bit DDR3-1600MHz 240-Pin 110ns KHX1600C9D3K6/12GX 2048MB) PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX1600C7D3K3/6GX 6GB 2GB 256M x 64-Bit x 3 pcs. DDR3-1600MHz CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)


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    KHX1600C7D3K3/6GX 64-Bit DDR3-1600MHz 240-Pin 110ns KHX1600C7D3K3/6GX 2048MB) PDF

    Untitled

    Abstract: No abstract text available
    Text: SL72B4B4M4F-A60V 4M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns 110ns The SiliconTech SL72B4B4M4F-A60V is a 4M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module


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    SL72B4B4M4F-A60V 168-Pin 110ns SL72B4B4M4F-A60V 24-pin 300-mil 168-pin A1-A11 DQ40-43 DQ8-11 PDF

    SL64B6A2M1E-A60

    Abstract: No abstract text available
    Text: SL64B6A2M1E-A60 2M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 17ns 110ns The SiliconTech SL64B6A2M1E-A60 is a 2M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This


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    SL64B6A2M1E-A60 110ns SL64B6A2M1E-A60 42-pin 168-pin DQ36-43 DQ45-52 DQ54-61 DQ63-70 PDF

    ta25 du14

    Abstract: No abstract text available
    Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits


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    ST1641OOOAG1 144-PIN STI641000AG1 44-pin -60LVG ta25 du14 PDF

    jeida+dram+88+pin

    Abstract: jeida 88 pin jeida dram 88 pin
    Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology


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    STI321000C1 STI321000C1-60Vx STI32100OC1-7OVx STI321000C1-80Vx 110ns 130ns 150ns 88-PIN jeida+dram+88+pin jeida 88 pin jeida dram 88 pin PDF

    jeida dram 88 pin

    Abstract: STI324000C1
    Text: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology


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    STI324000C1 88-PIN 110ns 130ns STI324000C1-70V 24pin jeida dram 88 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability


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    STI368003 STI368003-60 STI368003-70 110ns 130ns 72-PIN STI368003 24pin 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic


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    STI338000 STI338000-60 STI338000-70 STI338000-80 110ns 130ns 150ns 72-PIN STI338000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STI641004D1-60G 168-PIN DIMMS 1M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC *HPC 60ns 17ns 110ns 25ns • • EDO (Hyper) Mode operation CAS-before-RAS refresh capability • RAS-only refresh capability


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    STI641004D1-60G 168-PIN 110ns STI641004D1-60G 42-pin 168pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic


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    STI32256 STI32256-60 STI32 STI32256-80 110ns 130ns 150ns 72-PIN STI32256 PDF

    25S557

    Abstract: AM25S557 Am25S05
    Text: Am25S557/Am25S558 Am25S557/Am25S558 Eight-Bit by Eight-Bit Combinatorial Multiplier DISTINCTIVE CHARACTERISTICS Multiplies two 8 -bit numbers - 16-bit output Combinatorial - no clocks required Full 8 x 8 multiply in 45ns typ. Cascades to 1 6 x 1 6 in 110ns typ.


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    Am25S557/Am25S558 16-bit 110ns Am25S557 Am25S558 1C000380 25S557 Am25S05 PDF

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


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    KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30 PDF

    251C

    Abstract: 2SK1214 H150
    Text: P ow er F-MOS FET 2SK 1214 2SK1214 Silicon N-channel Power F-M O S FET Package Dimensions • Features • • • • Low ON resistan ce RDS on : RDs (on) l = 0 .0 6 il (typ.) High sw itching rate : tf= 110ns (typ.) No secondary breakdow n Low voltage drive is possible (VGs= 4 V ).


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    2SK1214 110ns 251C 2SK1214 H150 PDF

    72-XM

    Abstract: 7270m
    Text: WHITE /MICROELECTRONICS W PD 8M 72-XM D C 8Mx72 DRAM DIM M FEATURES GENERAL DESCRIPTION Perform ance range: ^RAC ^C A C ^RC ^H P C W PD8M 72-60M DC 60ns 20ns 110ns 30ns W PD8M 72-70M DC 70ns 25ns 130ns 33ns The W P D8M 72-XM D C is a 8M x 72 bit Dynamic RAM high


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    72-XM 8Mx72 24-pin 168-pin 7270m PDF

    25S558

    Abstract: Am25LS14 block diagram of 8*8 array multiplier CD003040 Am25S05
    Text: 8SSSSZUIV/ZSSSSZUJV A m 25S 5 57 /A m 2 5S 55 8 Eight-Bit by Eight-Bit Combinatorial Multiplier DISTINCTIVE CHARACTERISTICS Multiplies tw o 8 -bit numbers - 16-bit output Com binatorial - no clocks required Full 8 x 8 m ultiply in 45ns typ. Cascades to 16 x 16 in 110ns typ.


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    Am25S557/Am25S558 16-bit 110ns Am25S557 Am25S558 IC000380 25S558 Am25LS14 block diagram of 8*8 array multiplier CD003040 Am25S05 PDF

    Untitled

    Abstract: No abstract text available
    Text: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE


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    M27V160 110ns FDIP42W 50sec. M27C160 0020h M27V160is M27W160 M27V160 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON llllMJilLliMWIiei M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION


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    M27V800 110ns FDIP42W 26sec. M27V800 M27C800 PDF