Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA110N055T2 IXTP110N055T2 VDSS ID25 = 55V = 110A Ω ≤ 6.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55
|
Original
|
PDF
|
IXTA110N055T2
IXTP110N055T2
O-263
110N055T2
|
UF3205L
Abstract: 110A 55V
Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial
|
Original
|
PDF
|
UF3205
UF3205
146nC
UF3205L-TA3-T
UF3205G-TA3-T
UF3205L-TQ2-T
UF3205G-TQ2-T
UF3205L-TQ2-R
UF32ues
QW-R502-304
UF3205L
110A 55V
|
IRF1010
Abstract: IRF3205P
Text: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description
|
Original
|
PDF
|
PD-94791B
IRF3205PbF
O-220
O-220AB
IRF1010
IRF3205P
|
uf3205
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power
|
Original
|
PDF
|
UF3205
UF3205
146nC
UF3205L-TA3-T
UF3205G-TA3-Tat
QW-R502-304
|
AN-994
Abstract: IRF3205 IRF3205L
Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A
|
Original
|
PDF
|
1304B
IRF3205S/L
IRF32305S)
IRF3205L)
AN-994
IRF3205
IRF3205L
|
IRF3205 equivalent
Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A
|
Original
|
PDF
|
1304B
IRF3205S/L
IRF32305S)
IRF3205L)
IRF3205 equivalent
IRF3205 application
datasheet for IRF3205
IRF3205 ups
IRF3205
irf3205 DRIVER
irf3205 mosfet transistor
marking F53
AN-994
IRF3205L
|
IRF3205S
Abstract: IRF3205 irf 146 transistor 107A equivalent irf320 AN-994 IRF3205L IRF530S
Text: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description
|
Original
|
PDF
|
4149A
IRF3205S
IRF3205L
EIA-418.
IRF3205S
IRF3205
irf 146
transistor 107A equivalent
irf320
AN-994
IRF3205L
IRF530S
|
AN-994
Abstract: IRF3205L IRF3205S IRF530S
Text: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description
|
Original
|
PDF
|
4149A
IRF3205S
IRF3205L
EIA-418.
AN-994
IRF3205L
IRF3205S
IRF530S
|
Untitled
Abstract: No abstract text available
Text: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description
|
Original
|
PDF
|
4149A
IRF3205S
IRF3205L
EIA-418.
|
Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 55V / 110A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY110N06T 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A
|
Original
|
PDF
|
HY110N06T
O-220AB
2002/95/EC
O-220AB
250mA
125oC
-55oC
11-May-2012
|
IRF3205 application
Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A
|
Original
|
PDF
|
1304B
IRF3205S/L
IRF32305S)
IRF3205L)
IRF3205 application
irf3205
IRF3205 equivalent
AN-994
IRF3205L
OTTO T2
|
IRF3205
Abstract: IRF3205 IR IRF3205 E irf737
Text: PD - 9.1279D IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A
S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
1279D
IRF3205
O-220
IRF1010
IRF3205
IRF3205 IR
IRF3205 E
irf737
|
irf3205 DRIVER
Abstract: No abstract text available
Text: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description Advanced HEXFET® Power MOSFETs from International
|
Original
|
PDF
|
PD-91279E
IRF3205
O-220
irf3205 DRIVER
|
f1010e
Abstract: IRFP064N
Text: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
IRFP064N
O-247
f1010e
IRFP064N
|
|
|
IRF3205SPBF
Abstract: AN-994 IRF3205L IRL3103L IRF3205LPbF
Text: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
|
Original
|
PDF
|
IRF3205SPbF
IRF3205LPbF
EIA-418.
IRF3205SPBF
AN-994
IRF3205L
IRL3103L
IRF3205LPbF
|
irf3205pbf
Abstract: IRF3205#PBF IRF32
Text: PD-94791A IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description
|
Original
|
PDF
|
PD-94791A
IRF3205PbF
O-220
irf3205pbf
IRF3205#PBF
IRF32
|
IRF1010
Abstract: No abstract text available
Text: PD-94791 IRF3205PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A S Description Advanced HEXFET® Power MOSFETs from International
|
Original
|
PDF
|
PD-94791
IRF3205PbF
O-220
O-220AB
IRF1010
IRF1010
|
SSF*5508
Abstract: SSF5508 57AVDD pn junction diode 110A 55V 68A diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Text: SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 mΩ typ. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high
|
Original
|
PDF
|
SSF5508
SSF5508
SSF*5508
57AVDD
pn junction diode
110A 55V
68A diode
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
|
Untitled
Abstract: No abstract text available
Text: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFETÆ Power MOSFET D VDSS = 55V RDS on = 8.0m! G ID = 110A
|
Original
|
PDF
|
IRF3205SPbF
IRF3205LPbF
moun00
EIA-418.
|
MTN3205E3
Abstract: marking 66a IAS-100 N3205
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN3205E3 Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 1/8 BVDSS RDSON Max ID 55V 8 mΩ 110A Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
|
Original
|
PDF
|
MTN3205E3
C444E3
MTN3205E3
O-220
O-220e
UL94V-0
marking 66a
IAS-100
N3205
|
mosfet 3205
Abstract: 3205 MOSFET lbf 3205 mosfet vds25v ID 62A vds25v ID 62A
Text: E HEXFET Advanced Process Technology 3205 Power MOSFET VDSS = 54 V Ultra Low On-Resistance Dynamic dv/dt Rating ID25 = 110A 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS ON = 0.009 Ω Description Advanced HEXFET® Power MOSFETs from International
|
Original
|
PDF
|
O-220
07A/s,
mosfet 3205
3205 MOSFET
lbf 3205
mosfet vds25v ID 62A
vds25v ID 62A
|
Untitled
Abstract: No abstract text available
Text: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A
S Description
|
Original
|
PDF
|
PD-94791B
IRF3205PbF
O-220
O-220AB
|
UMOS-4
Abstract: 25V 55A to-252
Text: NP Series Super-Low-RDS ON MOSFETs Description With innovative fabrication process and advanced packaging, the NP Series MOSFETs feature super-low on-resistance—among the lowest in the industry in their class. With VDSS rated at 30, 40 and 55V, along with a current spec of 110A, the three members of
|
Original
|
PDF
|
|
f1010e
Abstract: IRFP064N irf3205 DRIVER for IRF3205 IRF3205 IRF3205 equivalent IRFP064N equivalent 11V16 Mosfet IRFP064N
Text: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
IRFP064N
O-247
f1010e
IRFP064N
irf3205 DRIVER
for IRF3205
IRF3205
IRF3205 equivalent
IRFP064N equivalent
11V16
Mosfet IRFP064N
|
