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    Panasonic Electronic Components 10SEQP560M

    Aluminum Organic Polymer Capacitors 10v 560uf 10x13mm
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    Panasonic Electronic Components 25SEK470M

    Aluminum Organic Polymer Capacitors 25V 470uF 14mOhms SMD 10x13mm
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    Panasonic Electronic Components 35SEK330M

    Aluminum Organic Polymer Capacitors 35V 330uF 18mOhms SMD 10x13mm
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    Panasonic Electronic Components 100SXE22M

    Aluminum Organic Polymer Capacitors 100VDC 22uF 30mOhm 10x13mm OS-CON
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    Vishay Intertechnologies 678D476M050CC4D

    Aluminum Electrolytic Capacitors - Radial Leaded 47uF 50volts 20% 10x13mm
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    TTI 678D476M050CC4D Bulk 360
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    10X13MM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TSOP56

    Abstract: 2N 5551 datasheet A0-A21 M58LW032D
    Text: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME


    Original     		M58LW032D 110ns 90ns/25ns, 110ns/25ns TSOP56 KWord/128KByte TSOP56 2N 5551 datasheet A0-A21 M58LW032D PDF

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80 PDF

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 PDF

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA PDF

    28F320J3A

    Abstract: 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth
    Text: TA254 TECHNICAL ARTICLE M58LWxxC and M58LWxxD: ST Introduces a New Family of Flash Memories for High Performance Applications Ruggero De Luca, Roberto Incerto, Marc Guedj, Flash Memory Division, STMicroelectronics, Agrate, Italy To meet designers' needs for Flash memories for


    Original     		TA254 M58LWxxC M58LWxxD: M58LWxxD M58LWxxA M58LWxxB 28F320J3A 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth PDF

    MX25L6455EXCI-10G

    Abstract: MX25L6455E MX25L6455EMI-10G mx25l6455 MX25L12855EXCI-10G MX25L12855EMI-10G MX25L128 MX25L6455EXC PM1467 MX25L12855E
    Text: MX25L6455E MX25L12855E MX25L6455E/MX25L12855E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1467 REV. 1.3, JUN. 25, 2010 1 MX25L6455E MX25L12855E Contents FEATURES. 5


    Original     		MX25L6455E MX25L12855E MX25L6455E/MX25L12855E PM1467 MX25L6455EXCI-10G MX25L6455E MX25L6455EMI-10G mx25l6455 MX25L12855EXCI-10G MX25L12855EMI-10G MX25L128 MX25L6455EXC PM1467 MX25L12855E PDF

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers


    Original     		M58LW032A TSOP56 56MHz 90/25ns 110/25ns 110ns. TBGA64 PDF

    TSOP56 Package Tape

    Abstract: No abstract text available
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations


    Original     		M58LW064D 110ns 110/25ns KWord/128KByte 0020h M58LW064D: 0017he M58LW064D110N6P M58LW064D TSOP56 Package Tape PDF

    M29W640

    Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
    Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29W640GH, M29W640GL M29W640GT, M29W640GB Word/32 M29W640GH/L: M29W640GT/B M29W640 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations


    Original     		M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte M58LW064D: 0017h TBGA64 PDF

    TSOP56

    Abstract: M58LW064D
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations


    Original     		M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte TBGA64 TSOP56 M58LW064D PDF

    MX25L6455E

    Abstract: MX25L6455 MX25L12855 MX25L6455EXCI-10G
    Text: MX25L6455E MX25L12855E MX25L6455E/MX25L12855E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1467 REV. 1.1, JUL. 17, 2009 1 MX25L6455E MX25L12855E Contents FEATURES. 5


    Original     		MX25L6455E MX25L12855E MX25L6455E/MX25L12855E PM1467 MX25L6455 MX25L12855 MX25L6455EXCI-10G PDF

    sn 5551

    Abstract: CR10 J-STD-020B M58LW064C TSOP56
    Text: M58LW064C 64 Mbit 4Mb x 16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations


    Original     		M58LW064C 56MHz 110ns sn 5551 CR10 J-STD-020B M58LW064C TSOP56 PDF

    25U4035

    Abstract: 25U1635E uson+8+land+pattern
    Text: The Ultimate Performance Flash Memory Macronix Serial Multi I/O MXSMIOTM Flash www.macronix.com Contents Why Use MXSMIOTM Family? 3 ● Advantages of Macronix Serial Multi-I/O Flash Family 4 ● Worldwide NOR Flash Trend 5 ● The Fastest Performance Serial Flash on the Market


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Asynchronous Random/Page Read – Page width: 8 Words


    Original     		M29DW128F 32-Word 16Mbit 48Mbit 16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Features summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) TBGA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME


    Original     		M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte TBGA64 0020h PDF

    2N 5551 datasheet

    Abstract: M58LW064D TSOP56
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME


    Original     		M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte TBGA64 2N 5551 datasheet M58LW064D TSOP56 PDF

    M58LW128A

    Abstract: M58LW128B TSOP56 A23B
    Text: M58LW128A M58LW128B 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW128A: x16 – M58LW128B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations


    Original     		M58LW128A M58LW128B M58LW128A: M58LW128B: x16/x32 TSOP56 TBGA64 66MHz 150/25ns 150nis M58LW128A M58LW128B TSOP56 A23B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM48AM3284LBB This is to notify our valuable customers that EOREX had launched its new version device for 16M*32 Mobile


    Original     		EM48AM3284LBB FBGA-90Ball EM48AM3284LBB, EM48AM3284LBB EM48AM3284LBA. EM48AM3284LBA) PDF

    EM47FM1688MCA

    Abstract: No abstract text available
    Text: EM47FM1688MCA/SCA 8Gb 32Mx8Bank×16×2Rank Double DATA RATE 3 SDRAM Features Description • Use Two 256M x 16 dies stack to 256M x 16 x 2R DDP. • VDD/VDDQ = 1.35V -0.065/+0.1V • Backward compatible to VDD/ VDDQ = 1.5V ±0.075V. • All inputs and outputs are compatible with SSTL_15


    Original     		EM47FM1688MCA/SCA 96Ball-FBGA EM47FM1688MCA PDF

    N6796

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		M29DW128F 32-Word 16Mbit 48Mbit 16Mbit N6796 PDF

    M29W128

    Abstract: No abstract text available
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29W128FH M29W128FL Words/16 32-Word 64-Bytes) M29W128 PDF