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    2SK2058

    Abstract: No abstract text available
    Text: Ordering num ber: EN 4315 No.4315 2SK2058 N-Channel MOS Silicon FET Very High-Speed Switching Applications i Features - Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage


    OCR Scan     		PDF 2SK2058 100/iA

    IRFSZ24A

    Abstract: No abstract text available
    Text: IRFSZ24A Advanced Power MOSFET FEATURES B V • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area T 7 5 t Operating Temperature Lower Leakage Current : 10 MA Max. @ VOS = 60V


    OCR Scan     		PDF IRFSZ24A O-220F IRFSZ24A

    2SK1731

    Abstract: 32593TH EN3826
    Text: Ordering n u m b e r:E N 3 8 2 6 _ 2SK1731 N-Channel MOS Silicon FET No.3826 Very High-Speed Switching Applications F eatu res •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.


    OCR Scan     		PDF EN3826 2SK1731 32593TH