10T7BS0 Search Results

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET T IM 1213-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G-icb = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package