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    SI-1125HD equivalent

    Abstract: mosfet 257A
    Text: Radiation Hardened MOSFET Nomenclature System xxxx FR HARRIS RADIATION HARDENED POWER MOSFET L J PACKAGE DESIGNATION — RELIABILITY SCREENING LEVEL 1 - Non-TX Com m ençai 2 - T X Equivalent of M IL-S -19500 3 - T X V Equivalent of M IL-S -19500 4 - Space Equivalent of M IL-S -19500


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    -204A -254A -257A -258AA 10kRAD 10OOkRAD MIL-S-19500, MIL-S-19500. SI-1125HD equivalent mosfet 257A PDF

    n 4111

    Abstract: N channel Mosfet 15A 500V
    Text: CSJ H a r r i s U U I S E M I C O N D U C T O R FRE264D, FRE264R, FfíE2G4H 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 250V, RDS on = 0.1300 TO-256AA • Second Generation Rad Hard MOSFET Results From New Design Concept*


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    FRE264D, FRE264R, O-256AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRE264H n 4111 N channel Mosfet 15A 500V PDF

    C500D

    Abstract: 1553B MA3690 MA3691 IS001 Marconi radiation hard mil 1553b
    Text: Marconi MA3690/1_ Radiation Hard 1553B Bus Controller/ Remote Term inal Electronic Devices FEATURES • Radiation Hard to 1 MRads Si A unique mechanism has been incorporated that allow s the subsystem to declare illegal co m m an d s le g a l, and


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    MA3690/1_ 1553B MA3690/1 Commercial-55 C500D MA3690 MA3691 IS001 Marconi radiation hard mil 1553b PDF

    C458D

    Abstract: MAS281 Marconi Electronic Devices MARCONI ELECTRONIC MA28155 MAS281 mil-std-1750a microprocessor radiation hard Marconi radiation hard PA7DS
    Text: Marconi Electronic Devices FEATURES • • • • • Radiation Hard to 1 MRad Si High SEU immunity, latch up free Silicon-on-Sapphire technology 24 Programmable I/O Pins All inputs & outputs are TTL Com patible • Direct Bit Set/Reset Capability Easing


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    MAS281 MA28155_ MA28155 C458D MAS281 Marconi Electronic Devices MARCONI ELECTRONIC mil-std-1750a microprocessor radiation hard Marconi radiation hard PA7DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 3Q HARRIS S E M I C O N D U C T O R FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma


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    FRM230D, FRM230R, FRM230H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD AN-8831, PDF

    Untitled

    Abstract: No abstract text available
    Text: I 1/ V R R I 15 FRS230D, FRS230R, S E M I C O N D U C T O R 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515£2 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma


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    FRS230D, FRS230R, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD 30UIS SS30PH0T0 PDF

    Untitled

    Abstract: No abstract text available
    Text: i l l H a r r i s U Ü SEMICONDUCTOR FRS140D, FRS140R, FRS 140H 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17At 100V, RDS on = 0.1450 TO-257AA * Second Generation Rad Hard MOSFET Result* From New Design Concepts


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    FRS140D, FRS140R, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRS140H PDF

    Untitled

    Abstract: No abstract text available
    Text: m a r r is 2N7280D, 2N7280R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM430 D, R, H November 1994 1 ^ 7 2 R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S FE Ts Package Features • 3A, 500V, RDS(on) = 2.50ft TO-204AA


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    2N7280D, 2N7280R FRM430 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D U C T O R FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 6A, -100V, RDS on = 0.5500 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


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    FRM9130D, FRM9130R, FRM9130H -100V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    2N7324D

    Abstract: No abstract text available
    Text: hHARRis 2N7324D, 2N7324R, S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM9250 D, R, H 1 ^ 7 3 2 4 H Radiation Hardened P-Channel Power M OSFETs April 1996 Package Features • 16A, -200V, RDS(on) = 0 .3 0 0 Q TO-2Q4AA • Second Generation Rad Hard M O SFET Results From New Design Concepts


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    2N7324D, 2N7324R, FRM9250 -200V, 100KRAD 300KRAD 1000KRAD 3000K 1-800-4-HARR 2N7324D PDF

    transistor 257A

    Abstract: mosfet 257A
    Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 12A, 200V, RDS(on) = 0.255ft TO-257A A • Second Generation Rad Hard MOSFET Results From New Design Concepts


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    FRS240 2N7286D, 2N7286R 2N7286H O-257A 255ft 10OKRAD 300KRAD 1000KRAD Useto3000KRAD transistor 257A mosfet 257A PDF

    shbb

    Abstract: T11G
    Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS140 D, R, H November 1994 2N7284D, 2N7284R 2N7284H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Features Package • 17A, 100V, RDS(on) = 0.145Q TO-257AA


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    FRS140 2N7284D, 2N7284R 2N7284H O-257AA 100KRAD 300KRAD 10OOKRAD 3000KRAD O-257AA shbb T11G PDF

    R3254

    Abstract: No abstract text available
    Text: FRS140D, FRS140R, FRS140H 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 100V, RDS on = 0.145S1 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


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    FRS140D, FRS140R, FRS140H O-257AA 145S1 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 R3254 PDF

    Untitled

    Abstract: No abstract text available
    Text: íH HARRIS S E M I C O N D U C T O R FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 4A.-200V, RDS on = 1.32Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


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    FRS9230D, FRS9230R, FRS9230H -200V, O-257AA 100KRAD 300KRAD 10OOKRAD 3000KRAD PDF