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    MYGTM01210BZN

    Abstract: mygtm01210 50ZL1000M EKZE160 Nippon capacitors
    Text: MYGTM01210BZN Application 1 DC-DC Converter Application Manual MYGTM01210BZN 1. Features ･Single output/SIL/non-isolated type DC-DC converter with high power 120W . ･High efficiency and small size have been achieved. ･Wide input range（17.0V to 40.0V）.


    Original     		PDF MYGTM01210BZN MYGTM01210BZN range17 mygtm01210 50ZL1000M EKZE160 Nippon capacitors

    S5N02

    Abstract: MMSF5N02HD
    Text: MOTOROW SEMICONDUCTOR TECHNICAL DATA Product Preview HDTMOSTM E-FETM High Energy Power FET N=Channel Enhancement=Mode Silicon This advanced high-cell density HD~OS E-FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source


    Original     		PDF MMSF5N02HD S5N02 MMSF5N02HD

    EUL-150-XL

    Abstract: MPD6S022S HP34401A RM-101 eul150 on 3055v EUL150XL HP6621A eul-150
    Text: MPD6S022S Application 1 DC-DC Converter Application Manual MPD6S022S Features ･ 3.0-5.5V input voltage. ･ High efficiency 95% typ.@3.3V/1A and small size and floor space saving. ･ Wide output voltage 1.1～3.6V range. (Output voltage is adjustable.)


    Original     		PDF MPD6S022S MPD6S022S EUL-150-XL HP34401A RM-101 eul150 on 3055v EUL150XL HP6621A eul-150

    MM74C14N

    Abstract: No abstract text available
    Text: HighCMV ANALOG DEVICES HighPerformance lsolation Amplifier FEATURES HighCMV lsolation:t5000V pk, 10msPulse;12500Vdc Continuous HighCMR: 110dBmin with SkSl tmbalance Low Nonlinearity:0,05%@ 10V pk.pk Ouqut High Gain stability: to.ootswf c,!o.oo1o/ol1o00hours


    Original     		PDF t5000V 10msPulse 2500V 110dBmin oo1o/ol1o00hours 100VA/ Model286f) 100V4/ 284J1 MM74C14N

    A44E

    Abstract: C22F C55F cs5f C202F C14F C11F C12F C201F C203F
    Text: TECHNICA L IN FO R M A TIO N Tempera^ uiire Coefficients Type Capacitance pF C54E C77E 33000 - 50000 50000 - 10OOCO Capacitor Tolerance ± c 500 V O LT W O R K IN G 5-2-I-0.5 5-2-1-0.5 I X b X d max mm a mm 31.7 X 25.4 X 10.2 4 4 .2 x 3 2 .8 x 8 .5 25.4


    OCR Scan     		PDF C55H/F C77H/ C55FA C77FA A44E C22F C55F cs5f C202F C14F C11F C12F C201F C203F

    41256p

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCTS TMM4 1 1 0OOC-10 TMM4 1 10OOC-12 1 ,0 48 ,5 7 6 WORD 1 BIT DYNAMIC RAM X SILICON MO NO LITHIC N-CHANNEL SILICON GATE MOS PRELIMINARY DESCRIPTION The T M M 4 1 1 0 0 0 C is th e n ew g e n e ra tio n d y n a m ic RAM organized 1 , 0 4 8 , 5 7 6 w o rd s by 1 bit,


    OCR Scan     		PDF 0OOC-10 10OOC-12 41256P. 10OOC 41256p

    nec uPD7811

    Abstract: capacitor MKL uPD7811 stc 12MHz 00111R PD7811 eprom 2732A 153 SP-J PD78PG11 UP*7811
    Text: NEC ¿/PD78PG11 HIGH-END, 8-BIT, SINGLE-CHIP NMOS MICROCOMPUTER WITH PIGGYBACK EPROM NEC Electronics Inc. D e scrip tio n Pin C o n fig u ra tio n T h e N E C ¿/PD78PG11 is a prototyping device used to emulate the m asked-RO M /UPD7811. Th e user can insert a standard EP R O M 2732A or 2764 into the


    OCR Scan     		PDF uPD78PG11 /PD78PG11 /UPD7811. theyi/PD78PG11. the/uPD7811. 16-bit nec uPD7811 capacitor MKL uPD7811 stc 12MHz 00111R PD7811 eprom 2732A 153 SP-J PD78PG11 UP*7811

    1000CLP

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 KM41C1000CL-7 KM41inued) 20-LEAD 1000CLP

    C614

    Abstract: No abstract text available
    Text: DC Solid S tate Relow -«as*-TE LEDYNE RELAYS Commercial DIP Solid Stale Relays Part Number Relay C61 $Gi*i s OPTICALLY ISOLATED 0.3 to 1.0 A Description C61 Solid State Relay with Term inals for Through Hole Mount SC61 Solid State Relay with Term inals for Surface Mount


    OCR Scan     		PDF 10OOC C614

    681000CLP

    Abstract: P55n 681000C 2U27 0-00C M681000CL
    Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated


    OCR Scan     		PDF KM681000C 128Kx8 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000CL 681000CLP P55n 681000C 2U27 0-00C M681000CL

    Untitled

    Abstract: No abstract text available
    Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4 V 1 0 0 0 C /C L /C L L is a high sp ee d • Performance range: K M 4 4 V 1 0 0 0 C /C L /C L L -6 tR A C tC A C tR C 60ns


    OCR Scan     		PDF KM44V1OOOC/CL/CLL 20-LEAD

    A44E

    Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
    Text: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000


    OCR Scan     		PDF C101E C201E C202E C203E C204E C55H/F C77H/ C55FA C77FA A44E C14F A12E C22F A33E cs5f A15E C12E C14E

    temperature and humidity sensor SHT1

    Abstract: SHT7x Application Mill-Max 851-93-004-20-001 SHT11 application note SHT11 humidity sensor SHT1X SHT11 application SHT75 DIN-50021 DIN-50021SS
    Text: i - S€N5IRION T H E S eiS iS O R C O M P A N Y S H T 1x / S H T 7x Humidity & Temperature Sensmitter Relative humidity and temperature sensors Dew point Fully calibrated, digital output No external components required Ultra low power consumption Surface mountable or 4-pin fully interchangeable


    OCR Scan     		PDF CH-8052 temperature and humidity sensor SHT1 SHT7x Application Mill-Max 851-93-004-20-001 SHT11 application note SHT11 humidity sensor SHT1X SHT11 application SHT75 DIN-50021 DIN-50021SS

    TMM41256P

    Abstract: tmm41256 TMM411000C-10 TMM411000C-12 TMM41 aaag
    Text: TOSHIBA MOS MEMORY PRODUCTS 10OOC-10 TMM411000C-12 1 ,0 4 8 ,5 7 6 W O R D X 1 BIT D Y N A M IC R A M S IL IC O N M O N O L IT H IC N -C H A N N E L S IL IC O N G A TE M O S PR ELIM IN A R Y D E S C R IP TIO N The T M M 4 1 1 0 0 0 C is th e new g e n e ra tio n


    OCR Scan     		PDF TMM411000C TMM41256P. TMM41 TMM411000C-10 TMM411000C-12 54TYF TMM41256P tmm41256 TMM411000C-12 aaag

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5110 OOC/CL_ E2G0009-17-41 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM 511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511OOOC/ CL achieves high integration, high-speed operation, and


    OCR Scan     		PDF MSM5110 576-Word E2G0009-17-41 511000C/CL MSM511OOOC/ MSM511000C/CL 26/20-pin 20-pin MSM511OOOCL