KMM591000B7
Abstract: KMM591000B-7 KMM591000B6 KMM591000B
Text: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs
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KMM591000B
10OOB
10OOBJ
20-pin
30-pin
KMM591OOOB-
591000B-
KMM591000B7
KMM591000B-7
KMM591000B6
KMM591000B
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7443003
Abstract: No abstract text available
Text: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)
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10OOBtffiiU
106KPa
60g/m3
5--30g/m3
30g/m3
7443003
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KM68U1000B
Abstract: KM68V1000B
Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V
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KM68V1000B,
KM68U1000B
128Kx8
128Kx8
KM68V1000B
32-SOP,
32-TSOP
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4HSC
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: ~ 0.730 M ax 3. Electrical Specifications: @25°C ISOLATION: - c G.245 TU R N S 1500 Vrm s RATIO: INSERTION LOSS: -1 .0 d B 0 .0 0 4 ^ RETURN LOSS: - 1 B d B E -1 2 d B 0.050 000000000000“ in X • a XFGIA1QOPOL Qa CD -J L -0 .0 3 0
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350uH
100KHz
100mV
0/350mA
E151550
102mm)
10OOBA5E-T
Mar-29
Mar-29-08
4HSC
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Xfmr
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 3. Electrical Specifications: @25°C ISOLATION: 1500 Vrms 0.730 Max TURNS RATIO: P R I/ S E C 1CT:1CT ±2% D .2 4 Û OCL: 350uH Min 0>100KHz lOOmV BrnADC c Pri DCR: TBD Ohms Max 4 1 1 1» ft 0.Û45 0.025 E 0.050 Sec DCR: TBD Ohms Max
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350uH
100mV
MIL-STD-202G,
UL04V-O
155-C.
E151556
-t-125
102mm)
1000BASE-T
Apr-24-08
Xfmr
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am79761 Physical Layer 10-Bit Transceiver for Gigabit Ethernet GigaPHY -SD DISTINCTIVE CHARACTERISTICS • Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) ■ Suitable for both Coaxial and Optical Link applications
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Am79761
10-Bit
64-pin
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RJ45 jack dimension
Abstract: jack j4 Shielded RJ45 Jack SI-50096-F
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY” TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. / I COMPONENTSfor a CONNECTED PLA N ET^/ DOCUMENT / PART NO.: SI-50096-F TITLE : CMC, 1000BT, TAB UP, SHIELDED
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SI-50096-F
1000BT,
SI-50096-F
FM999183
RJ45 jack dimension
jack j4
Shielded RJ45 Jack
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Untitled
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 3. E lectrical Specifications: @25°C A 0 .6 0 0 Max - ISOLATION: — — 1500 V rm s c 0 .3 2 0 TURNS RATIO: P R l/S E C 1CT:1 CT ±2% 0CL: 3 5 0 uH MIN @100KHz 100m V 8mADC INSERTION LOSS: 1 ,2dB MAX 1 OOKHz 1,4dB MAX @ 1 -1 Z5MHz
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350uH
100KHz
100mV
1-125MHz
-40MHz
100MHz
30-200MHz
10-10GMHz
MIL-STD-202G.
UL94V-0
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Untitled
Abstract: No abstract text available
Text: KM44C1OOOBSL CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1 OOOBSL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1OOOBSL
KM44C1000BSL-6
KM44C1000BSL-7
KM44C1000BSL-8
110ns
130ns
150ns
KM44C1
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ZAB005
Abstract: ZAB010 ZAB020 ZAB040 ZAB060 ZAB080 ZAB100
Text: 6 AMPERE AXIAL LEAD RECTIFIERS HIGH SURGE • PRV TO 1000 VOLTS • 6 AMP RATING • 1000 AMP SURGE • HIGH TEMPERATURE STABILITY • HIGH SURGE CAPABILITY • AVALANCHE CHARACTERISTICS PRV 50V 100V 200V 400V 600V 800V 1000V TYPE NO. ZAB005 ZAB010 ZAB020
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ZAB005
ZAB010
ZAB020
ZAB040
ZAB060
ZAB080
ZAB100
speci00
1071G
1-BOO-B78-a8Ea
ZAB100
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csa 8.00mt cm k
Abstract: adpcm MSM6388GS-2K
Text: O KI Semiconductor MSM6388 ADPCM Solid-State Recorder 1C GENERAL DESCRIPTION The MSM6388 is a "solid-state recorder" IC developed using ADPCM Adaptive Differential Pulse Code Modulation technology. When an external microphone such as a speaker driving amplifier,
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MSM6388
MSM6388
MSM6388,
12-bit
-40dB/oct)
MSM6389)
6389JS
6388GS
csa 8.00mt cm k
adpcm
MSM6388GS-2K
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Untitled
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 0 .7 3 0 3. Electrical Specifications: @25°C ISOLATION: M ax T U R N S 1500 Vrms R A T IO : P R l/ S E C 1 C T :1 C T ± 2% c D.24Û OCL: 3 5 0 uH MIN @100KHz 100mV 8mADC ,_ 0 .Û 4 5 0 025 0 .0 0 4 E Prl DCR: 0 .5 6 Ohms Max
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350uH
100KHz
100mV
1MHz-100MHz
155-C.
E151556
-t-125
102mm)
10OOBA5E-T
Oct-19-07
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns
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KM44C1OOOBSL
KM44C1000BSL-6
110ns
KM44C1000BSL-7
130ns
KM44C1000BSL-8
150ns
cycles/256ms
20-LEAD
0Q157G5
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8
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KM68V1000B,
KM68U1000B
128Kx8
DD23b66
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sk 8060
Abstract: 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F
Text: M O S m i» lU i& M O S Integrated C ircu it P i 4 t : 7 h - ' » 1 D 7 1 7 , 1 7 1 7 A i <7)\s3- " j - f ' - * 4 0 P 3 > h n - 7 /¿PD17107liROM1 K / W h (512X16t:-y h) , RAM 16X 4 ti' 7 K 1/0*°- h 11 £ t lT ^ - 5 £ -f “ T-f ? □ = !> h P - 7 t ' t o
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uPD17107
uPD17107A
512X16t
512X16
sk 8060
8060c
17p107
KT77
CDA MC
UM 7107
D17107
17P103
17p104
BR-F SI-F
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gm71c1000b
Abstract: GM71C1000 GM71C1000BJ
Text: LG S e m ic o n GM71C1000B/BL C o .,L td . 1,048,576 W ORDS x 1 BIT CMOS DYNAM IC RAM Description Features The G M 71C 100QB/BL is the new generation dynamic RAM organized 1,048,576 x 1 bit. G M 71C 1OOOB/BL has realized higher density, higher performance and various functions by utilizing
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GM71C1000B/BL
100QB/BL
1000B/BL
gm71c1000b
GM71C1000
GM71C1000BJ
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 P R E L IM IN A R Y D E S C R IP T IO N : Th e D P 5 Z 4 M W 1 6 P n 3 " S L C C " devices are a revolutionary new m em ory subsystem using D ense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip
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DP5Z4MW16Pn3
50-pin
120ns
150ns
200ns
30A161-24
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Untitled
Abstract: No abstract text available
Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996
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KM616V1000B,
KM616U1000B
100ns
KM616V1000B
KM616V1QQGB
KM616U1QQQB
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68U1000
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM68U1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast A ccess Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165nW (max.)L-Version
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KM68U1000BLE
128Kx8
100ns
165nW
132mW
KM68U1000BLGE/BLGE-L:
525mil)
KM68U1000BLTE/BLTE-L
KM68U1000BLRE/BLRE-L:
10OOBLE/BLE-L
68U1000
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Untitled
Abstract: No abstract text available
Text: 3. Electrical Specifications: @25°C 1. Mechanical Dimensions: 0.730 ISOLATION: 1500 Vrms Prf -to Sec Max TURNS RATIO: P R l/S E C 1 CT:1 CT ± 2 % 0CL: 3 5 0 uH MIN @100KHz 100mV 8mADC o Rise Time: 1,75ns Max. 0 .0 4 5 0 .0 2 5 •±=, - it 0 .0 0 4 E
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0DD00DDDD0DD"
350uH
100KHz
100mV
0/35ex:
E15155B
102mm'
1000BASE-T
0ct-08-08
0ct-08-0a
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8ca6
Abstract: No abstract text available
Text: AMDËI '•Rl UMîNAP Am79761 Gigabit Ethernet PHY Layer Products DISTINCTIVE CHARACTERISTICS • Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) ■ Suitable tor both Coaxial and Optical Link applications ■ 10-bit TTL Interface for Transmit and Receive
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Am79761
10-bit
64-pin
10x10
14x14
11CPC-1W
11CPC-1W`
8ca6
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IEEE Standard 803.2
Abstract: RJ45 connector IEEE 802.3 amp sca-2 IEEE ethernet 803.2
Text: Catalog 1307515 Issued 9-99 Industry Standards Reference Chart Standard Description Typical AM P Connectors Section IEEE 802.3 10BASE-T http://standards.ieee.org IEEE 802.3 standards for 10Mb/s Ethernet over unshielded twisted pair or 150 Ohm cables 8 position Modular Jacks and Plugs that
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10BASE-T
10BASE-FL
100BASE-TX
10Mb/s
100Mb/s
IEEE Standard 803.2
RJ45 connector IEEE 802.3
amp sca-2
IEEE ethernet 803.2
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kvp smd
Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
kvp smd
kvp 42 DIODE
kvp 26A M
kvp diode
2005C
1.5 khp
SMD kvp
XMR5
0709a
PKF SMD
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 R U S H 104 RUSH105 ELECT R ICAL CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified
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RUSH103
RUSH105
200mA,
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