LQN2A
Abstract: LQN2A22NM LQN2A82NM LQN2AR10K04 LQN2A33NM Murata lqn2a 8N8 marking LQN2AR18K LQN2A47 lqn2a10nm
Text: SURFACE MOUNT INDUCTORS LQN1A/2A Series The LQN1A and LQN2A Series are comprised of air-core chip coils having sub-miniature alumina core bobbins. These coils are excellent in high-frequency video and communication applications because of their high Q values
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100MHz
LQN2A22NM
LQN2A33NM
LQN2A39NM
LQN2A47NM
LQN2A56NM
LQN2A68NM
LQN2A82NM
LQN2AR10K04
LQN2A
LQN2AR10K04
Murata lqn2a
8N8 marking
LQN2AR18K
LQN2A47
lqn2a10nm
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shct
Abstract: WE VQE 24 E IRGTDN150M12 IR 501
Text: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V
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IRGTDN150M12
100nH
C-574
4flSS452
002D3b4
shct
WE VQE 24 E
IRGTDN150M12
IR 501
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PDF
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9956b
Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
Text: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI140U06
100nH
C-836
4ASS452
0050b2b
9956b
c836
irgti140u06
diode c832
c833
*9956b
956B
mosfet c836
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PDF
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GE DIODE
Abstract: C769
Text: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGKI050U06
C-769
4AS5452
C-770
4S5S452
GE DIODE
C769
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PDF
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Untitled
Abstract: No abstract text available
Text: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■
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GP1200FSS16S
DS4336
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PDF
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GP600FHB16S
Abstract: No abstract text available
Text: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.
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GP600FHB16S
DS4545
GP600FHB16S
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PDF
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NE8392A
Abstract: NE8392AA IN916 NE8392AN AC DC transformer Philips CD235 "network interface controller"
Text: Philips Semiconductors Data Communications Products Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION NE8392A PIN CONFIGURATION The NE8392A Coaxial Transceiver Interface CTI is a coaxial line driver/receiver for Ethernet (10base5) and Thin Ethernet (10base2)
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NE8392A
NE8392A
10base5)
10base2)
100ns
NE8392AA
IN916
NE8392AN
AC DC transformer Philips
CD235
"network interface controller"
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PDF
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Untitled
Abstract: No abstract text available
Text: 130.38 MHz Filter for CDMA Subscriber Applications Part Number 855326 S-Parameter Data Available Continued on follow ing page T y p ic a l / / / ' y 's P e r f o r m a n c t? \ \ \ ' V/ ’ V ’ V fV V Horizontal: 1 M H z / D iv Vertical: 1 0d B / D iv
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220nH
10OnH
165nH,
155nH,
155nH
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PDF
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philips dl 701 application
Abstract: philips dl 701 DC-DC SOT28 SOT261-3 IC-19 NE83Q92 NE83Q92A20 NE83Q92D philips dl 701 K NE83Q93
Text: INTEGRATED CIRCUITS NE83Q92 Low-power coaxial Ethernet transceiver Product specification 1995 May 1 IC-19 Data handbook Philips Semiconductors PHILIPS PHILIPS is Material Copyrigh y -¿ii[ ô2b O Q Û ci?3T S 71 Philips Semiconductors Product specification
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NE83Q92
IC-19
NE83Q92
10base5)
10base2)
OT261-3
MO-047AB
711Dfi2b
philips dl 701 application
philips dl 701
DC-DC SOT28
SOT261-3
NE83Q92A20
NE83Q92D
philips dl 701 K
NE83Q93
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PDF
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IRGTI090U06
Abstract: c823 1C00 954B C824 c821 ls IRGT1090U06 apak
Text: International Hü Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT V c e = 600V .Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant .Switching-Loss Rating includes all "tail"
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IRGTI090U06
25KHz
100KHz
C-823
IRGTI090U06
100nH
10-1NT-A-PAK
C-824
c823
1C00
954B
C824
c821 ls
IRGT1090U06
apak
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PDF
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IRGKI200F06
Abstract: IGBT FF 300 l200a
Text: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"
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10KHz
50KHz
IRGKI200F06
C-188
IRGKI200F06
IGBT FF 300
l200a
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PDF
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OF IGBT 300A 500V
Abstract: IRGTDN300M06 ETH9
Text: brtemational Im i Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Half-Bridge —O3 VCE = 600V lc = 300A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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IRGTDN300M06
C-462
OF IGBT 300A 500V
IRGTDN300M06
ETH9
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRO POWE R S Y S T E M S INC blE » m h D T 7 44 H G G G 4 fl2 b IDS H U P S MP87095 CMOS Very Low Power 10-Bit Analog-to-Digital Converter M Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution
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MP87095
10-Bit
10-Bit
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PDF
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Untitled
Abstract: No abstract text available
Text: R F H MICRO DEVICES RF2604 LINEAR IF AM PLIFIER W ITH AGC AND RSSI Typ ical A p plications • Broadband PCS Receivers • CATV Set-top and Head-end Systems • High Data Rate Digital Systems • Portable Battery Powered Equipment • Dual Mode Digital/Analog Receivers
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RF2604
RF2604
RF2604PCBA
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PDF
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DD-221
Abstract: dioda module
Text: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,
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IRGNI0075M12
0D22152
10OnH
DD-221
dioda module
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PDF
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200a 300v mosfet
Abstract: No abstract text available
Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGTDN200K06
C-460
GD2025D
200a 300v mosfet
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PDF
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Diode C219
Abstract: fast recovery diode 600v 120a 958B IRGTI120F06 DIODE 47N DIODE RG
Text: International [ï«r!Rectifier PM95aB IRGTI120F06 "HALF-BRIDGE" IG BT INT-A-PAK Fast Speed IG BT V CE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail”
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IRGTI120F06
10KHz
50KHz
C-223
IRGTI120F06
C-224
Diode C219
fast recovery diode 600v 120a
958B
DIODE 47N
DIODE RG
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PDF
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high efficiency current mode flyback converter
Abstract: 36Vto 4412DY 55206-A2 N CHANNEL MOSFET MIL GRADE 55380-A2 NEC NeoCap AVXTPSD107M010R0065 lt1339 application note pc 817 mosfet gate drive
Text: Final Electrical Specifications r r u v _ LTC1775 m TECHNO LO G Y High Pow er No R s e n s e C urrent M o d e Synchronous S tep-D ow n S w itching R egu lator FCnTURCS D iS C R IP T IO n • Highest Efficiency Current Mode Controller ■ No Sense Resistor Required
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300mV
30joA
16-Lead
LTC1649
LTC1702
500kHz;
LTC1735
16-Pin
high efficiency current mode flyback converter
36Vto
4412DY
55206-A2
N CHANNEL MOSFET MIL GRADE
55380-A2
NEC NeoCap
AVXTPSD107M010R0065
lt1339 application note
pc 817 mosfet gate drive
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PDF
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IRGKIN150M06
Abstract: No abstract text available
Text: International ioRlRectifier Provisional Data Sheet PD-9.1150 IRGKIN150M06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT V Œ = 600V lc = 150A V ce ON < 2.0V • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGKIN150M06
C-434
IRGKIN150M06
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PDF
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C559
Abstract: IRGRDN300M12 IRGDDN300M12
Text: IRGDDN300M12 IRGRDN300M12 — hecnner "SINGLE SW ITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V CE= 1200V lc = 300A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.7V tsc> 10ms
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IRGDDN300M12
IRGRDN300M12
D0S035G
C-560
C559
IRGRDN300M12
IRGDDN300M12
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PDF
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ge traction motor
Abstract: No abstract text available
Text: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module
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GP500LSS06S
DS4324
GP500LSS06S
ge traction motor
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PDF
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GP600FHB16S
Abstract: DS4545
Text: GP600FHB16S @ M IT E L Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4545 - 2. DS4545 - 2.7 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE(sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.
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DS4545
GP600FHB16S
GP600FHB16S
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PDF
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Untitled
Abstract: No abstract text available
Text: GP600DHB16S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R Supersedes March 1997 version, DS4335 - 5.6 DS4335 - 5.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.
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GP600DHB16S
DS4335
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PDF
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Untitled
Abstract: No abstract text available
Text: R F H RF2609 MICRO DEVICES CDMA/FM TR A N SM IT AGC AM PLIFIER Typ ical A p plications • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA
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RF2609
RF2609
IS-95
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PDF
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