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    10N170 Search Results

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    10N170 Price and Stock

    IXYS Corporation IXYH10N170CV1

    IGBT 1700V 36A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH10N170CV1 Tube 410 1
    • 1 $10.08
    • 10 $10.08
    • 100 $6.36067
    • 1000 $10.08
    • 10000 $10.08
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    Mouser Electronics IXYH10N170CV1 440
    • 1 $10.08
    • 10 $9.21
    • 100 $6.36
    • 1000 $5.58
    • 10000 $5.58
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    TTI IXYH10N170CV1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.58
    • 10000 $5.58
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    TME IXYH10N170CV1 1
    • 1 $13.69
    • 10 $10.98
    • 100 $9.87
    • 1000 $9.87
    • 10000 $9.87
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    IXYS Corporation IXYH10N170C

    IGBT 1700V 36A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH10N170C Tube 355 1
    • 1 $8.29
    • 10 $8.29
    • 100 $5.16233
    • 1000 $4.36163
    • 10000 $4.36163
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    Mouser Electronics IXYH10N170C
    • 1 $8.29
    • 10 $7.74
    • 100 $5.16
    • 1000 $4.44
    • 10000 $4.44
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    TTI IXYH10N170C Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.45
    • 10000 $4.45
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    TME IXYH10N170C 1
    • 1 $10.27
    • 10 $8.17
    • 100 $7.34
    • 1000 $7.34
    • 10000 $7.34
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    IXYS Corporation IXBH10N170

    IGBT 1700V 20A 140W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH10N170 Tube 262 1
    • 1 $9.86
    • 10 $9.86
    • 100 $6.212
    • 1000 $9.86
    • 10000 $9.86
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    Mouser Electronics IXBH10N170 238
    • 1 $10.44
    • 10 $9.86
    • 100 $8.16
    • 1000 $6.58
    • 10000 $5.92
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    TTI IXBH10N170 Tube 300 30
    • 1 -
    • 10 -
    • 100 $6.28
    • 1000 $6.28
    • 10000 $6.28
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    TME IXBH10N170 27 1
    • 1 $9.94
    • 10 $9.94
    • 100 $8.1
    • 1000 $7.76
    • 10000 $7.76
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    New Advantage Corporation IXBH10N170 34 1
    • 1 -
    • 10 -
    • 100 $14.67
    • 1000 $14.67
    • 10000 $14.67
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    IXYS Corporation IXGH10N170A

    IGBT NPT 1700V 10A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH10N170A Tube 88 1
    • 1 $7.59
    • 10 $7.59
    • 100 $4.69767
    • 1000 $3.89863
    • 10000 $3.89863
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    Mouser Electronics IXGH10N170A 5
    • 1 $7.59
    • 10 $7.01
    • 100 $5.08
    • 1000 $5.08
    • 10000 $5.08
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    TTI IXGH10N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.3
    • 10000 $5.3
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    TME IXGH10N170A 35 1
    • 1 $7.75
    • 10 $6.15
    • 100 $5.74
    • 1000 $5.74
    • 10000 $5.74
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    IXYS Corporation IXGH10N170

    IGBT 1700V 20A 110W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH10N170 Tube 55 1
    • 1 $11.23
    • 10 $11.23
    • 100 $7.14433
    • 1000 $11.23
    • 10000 $11.23
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    Mouser Electronics IXGH10N170 38
    • 1 $10.85
    • 10 $10.15
    • 100 $7.14
    • 1000 $6.4
    • 10000 $6.4
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    TTI IXGH10N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.4
    • 10000 $6.4
    		Buy Now
    TME IXGH10N170 1
    • 1 $8.22
    • 10 $6.53
    • 100 $5.87
    • 1000 $5.87
    • 10000 $5.87
    		Get Quote
    Find more 10N170 price and stock on Findchips.com

    10N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10N170

    Abstract: BiMOSFET
    Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N170 728B1 123B1 728B1 065B1 10N170 BiMOSFET

    10N170

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 10N170 O-247 O-268 728B1

    ge motor 752

    Abstract: 10N170A 1 0 9 R
    Text: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 10N170A 728B1 123B1 728B1 065B1 10N170A ge motor 752 1 0 9 R

    10N170A

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 10N170A 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 10N170A 728B1

    10N170

    Abstract: No abstract text available
    Text: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N170 10N170 O-268 O-247 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 10N170A 728B1 123B1 728B1 065B1 10N170A

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N170 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 10N170 O-247 O-268 728B1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6