schematic diagram 230VAC to 24VDC POWER SUPPLY
Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element14
schematic diagram 230VAC to 24VDC POWER SUPPLY
48V 30A SPDT RELAY
IM03D
PCH-124
N mosfet 250v 600A
VARISTOR 275 L20
PA66 - GF 25 relay
marking code W16 SMD Transistor
90W 19.5V Power Adapter pcb
G6CU-2117P
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IRACO
Abstract: No abstract text available
Text: POWER MANAGEMENT SYSTEM DEVICE POWER MANAGEMENT SYSTEM DEVICE RC5T583Sx Product Specifications Rev. 1.0 June 11, 2012 RICOH COMPANY, LTD. Electronic Devices Company This specification is subject to change without notice. 2011-2012 Rev.1.0 Page 1 POWER MANAGEMENT SYSTEM DEVICE
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RC5T583Sx
IRACO
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G03H1202
Abstract: ic 5304 1a 1200v 3A ic 5304 IGA03N120H2 IKP03N120H2 PG-TO220-3-31
Text: IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability
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IGA03N120H2
PG-TO220-3-34
PG-TO220-3-31
G03H1202
G03H1202
ic 5304 1a
1200v 3A
ic 5304
IGA03N120H2
IKP03N120H2
PG-TO220-3-31
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k30t60
Abstract: IKW30N60T k30t6 Q67040-S4717 K-30-T IGBT IKW30N60T
Text: IKW30N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW30N60T
k30t60
k30t6
Q67040-S4717
K-30-T
IGBT IKW30N60T
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K75T60
Abstract: 400w power supply K75T60 igbt ikw75n60
Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
PG-TO-247-3-1
K75T60
400w power supply
K75T60 igbt
ikw75n60
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mau aui
Abstract: rxc 150 NATIONAL TP 41 WITH PIN CONFIGURATION DIAGRAM AM7990 LXT901 LXT907 MB86950 MB86960 MTD907 TMS380C26
Text: MYSON TECHNOLOGY MTD907 Ethernet Encoder/decoder and 10BaseT Transceiver with Built-in Waveform Shaper FEATURES • • • • • • • • • Pin-out and functionally compatible with Level One LXT907. Built-in UTP waveform shaping function - no external filters required.
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MTD907
10BaseT
LXT907.
10Base-T
MTD907
LXT907
LXT907
mau aui
rxc 150 NATIONAL
TP 41 WITH PIN CONFIGURATION DIAGRAM
AM7990
LXT901
MB86950
MB86960
TMS380C26
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5s
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IHW40T60
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IkW30N60T
Abstract: No abstract text available
Text: TRENCHSTOP Series IKW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKW30N60T
IkW30N60T
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M2FH3
Abstract: No abstract text available
Text: s /3 '.v h + - a " u y y- Schottky Barrier Diode Single Diode Surface Mount M2FH3 30V 6A > /J'§kSM D > H ffiV F= 0 .3 6 V ID C /D C nyjK-2 nvny RATINGS Absolute Maximum Ratings isÊ » & ^i|rêa E -f- a Storage Temperature Operating Junction Temperature
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50HziE3Kft,
M2FH3
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d10sc9m
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE D10SC9M 90 V 10 A Feature • Tj=150t: • Tj=150°C • P rrsm 'F lîr jy î s x fô M . • P r r s m Rating • Full Molded Main Use • D C /D C D y J t— P • O A ftS • Switching Regulator • DC/DC Converter
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D10SC9M
d10sc9m
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Diode Module mtm D200LC40B OUTLINE 400V 200A Feature •*a a u m • H igh lo R ating • trr=150ns • trr= 150ns • Isolation ty p e Main Use • S e m ic o n d u c to r P roce ss M a c h in e • H igh p o w e r source • FA
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D200LC40B
150ns
J533-1)
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ADC8S-12
Abstract: No abstract text available
Text: Fast Complete 12-Bit A/D Converters ANALOG DEVICES □ AD ADC84/AD ADC85/AD5240 FEATURES FU N CTIONAL BLOCK DIAGRAM Performance Complete 12-Bit A /D Converter with Reference and Clock Fast Successive Approximation Conversion: 10/us or 5fa Buried Zener Reference for Long Term Stability and Low
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12-Bit
ADC84/AD
ADC85/AD5240
10/us
10ppm/Â
880mW
IL-STD-883B
ADC84/0
10/is
ADC8S-12
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm = 4500V Note 1 Repetitive Peak Reverse Voltage : V r r m = 4000V R.M.S On-State Current : IT(RMS) = 800A
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SG3000GXH25
S120MAX.
300mA
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sg3000gx
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG3000GXH25
10ms16000
--2500A
--3000V
300mA
--300A
sg3000gx
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D200LC40B
Abstract: DIODE M4 marking J533 hk7 marking
Text: Super Fast Recovery Diode Diode Module • ¿ m il OUTLINE D200LC40B 400V 200A Feature • High lo Rating • trr=150ns • trr= 150ns • Isolation type •jests? Main Use • Semiconductor Process Machine • * 5 S !* 8 ! • High power source • FA • Factory Automation
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D200LC40B
150ns
0LC40B
J533-1
D200LC40B
DIODE M4 marking
J533
hk7 marking
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FtZ MARKING CODE
Abstract: D25SC6M D25SC6MR
Text: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K
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D25SC6MR
15ffC
R01GD
D25SC6M
CJ533-1
FtZ MARKING CODE
D25SC6M
D25SC6MR
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4500v
Abstract: SG3000GXH23G SG3000GXH29
Text: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus
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SG3000GXH23G
00A//Â
000V//Â
10ms-Width
sg3000gxh29.
4500v
SG3000GXH23G
SG3000GXH29
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UTM ceramic RESISTOR 212-3
Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Text: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage
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Q62702-F201
Q62702-F202
35bQS
00LL753
fl235b05
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D30L60
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD
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D30L60
150ns
D30L60
J533-1
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9V DC INPUT
Abstract: No abstract text available
Text: H A R R IS X CA3440 Semiconductor î0ss^cU6Al January 1999 SS* \C W 63kHz, Nanopower, BiMOS Operational Amplifiers Description Features • High Input Resistance. 2Ti2 Typ The CA3440 is an integrated circuit operational amplifier that combines the advantages of MOS and bipolar transistors on
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CA3440
63kHz,
CA3440
300nW)
9V DC INPUT
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N ; E PGA202/203 1 Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS • DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL— PGA202 GAINS O F 1 ,10,100,1000
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PGA202/203
PGA202
PGA203
PGA202
17313bS
0D3D771
17B13bS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current
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SGR3500GXH29
--3500A
--3000A
--30A
600mA
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BF255
Abstract: IC 41 BF BF254 IS420 81-common Q62702-F201 Q62702-F202 marking code 41 BF TO92
Text: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configural ion 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage
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Q62702-F201
Q62702-F202
EHT07010
BF255
IC 41 BF
BF254
IS420
81-common
marking code 41 BF TO92
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