marking d6 sod 23 diode
Abstract: L7 SOD323 l7 marking code marking code DIODE d6 BAT17W BAT17WS
Text: BAT17WS New Product Vishay Semiconductors formerly General Semiconductor Schottky Diode Mounting Pad Layout 0.055 1.40 SOD-323 0.062 (1.60) 0.047 (1.20) .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Features .006 (0.15)
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BAT17WS
OD-323
OT-23
OD-123
BAT17W
10-May-02
marking d6 sod 23 diode
L7 SOD323
l7 marking code
marking code DIODE d6
BAT17W
BAT17WS
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Marking Code 2T
Abstract: transistor 2n4403 equivalent sot 23 marking code 2t SOT-23 2N4403 MMBT4403 2T 2N4403 MMBT4401 MMBT4403 2n4403 marking codes
Text: MMBT4403 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0.175)
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MMBT4403
O-236AB
OT-23)
MMBT4401
150mA
150mA,
10-May-02
Marking Code 2T
transistor 2n4403 equivalent
sot 23 marking code 2t
SOT-23 2N4403
MMBT4403 2T
2N4403
MMBT4403
2n4403 marking codes
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PDF
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MPS2907A
Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A EQUIVALENT
Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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MPS2907A
O-226AA
OT-23
MMBT2907A.
20K/box
18-Jul-08
MPS2907A
EQUIVALENT MPS2907A
MMBT2907A
MPS2907A EQUIVALENT
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PDF
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BS250
Abstract: No abstract text available
Text: BS250 Vishay Semiconductors formerly General Semiconductor DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time
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BS250
O-226AA
20K/box
20K/box
10-May-02
BS250
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BAS70
Abstract: BAS70-04 BAS70-05 BAS70-06
Text: BAS70 thru BAS70-06 Vishay Semiconductors formerly General Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as
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BAS70
BAS70-06
O-236AB
OT-23)
OT-23
E8/10K
30K/box
10-May-02
BAS70-04
BAS70-05
BAS70-06
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PDF
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MMBT2907A
Abstract: MPS2907A Marking Code 2F mps2907a transistor
Text: MMBT2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View 3 .056 (1.43) .052 (1.33) Mounting Pad Layout .016 (0.4) 0.035 (0.9) 0.079 (2.0) .007 (0.175)
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MMBT2907A
O-236AB
OT-23)
150mA
200ns
10-May-02
MMBT2907A
MPS2907A
Marking Code 2F
mps2907a transistor
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PDF
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MPS2907A EQUIVALENT
Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A
Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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MPS2907A
O-226AA
OT-23
MMBT2907A.
20K/box
150mA,
10-May-02
200ns
MPS2907A EQUIVALENT
EQUIVALENT MPS2907A
MMBT2907A
MPS2907A
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PDF
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BAT17
Abstract: SOT23 MARKING L7 BAT17DS BAT17W BAT17WS
Text: BAT17 and BAT17DS Vishay Semiconductors New Product formerly General Semiconductor Schottky Diodes Mounting Pad Layout 0.031 0.8 SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 Dimensions in inches and (millimeters)
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BAT17
BAT17DS
OT-23
BAT17
10-May-02
SOT23 MARKING L7
BAT17DS
BAT17W
BAT17WS
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marking CODE L6
Abstract: BAT46 BAT46W LL46 88140
Text: BAT46W Vishay Semiconductors formerly General Semiconductor Schottky Diode SOD-123 .022 0.55 0.094 (2.40) 0.055 (1.40) .006 (0.15) max. .010 (0.25) min. Features 0.055 (1.40) Dimensions in inches and (millimeters) .053 (1.35) max. .067 (1.70) .055 (1.40)
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BAT46W
OD-123
DO-35
BAT46
250mA
10-May-02
marking CODE L6
BAT46W
LL46
88140
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PDF
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vishay sod123
Abstract: l7 marking code BAT17 BAT17W BAT17WS
Text: BAT17W New Product Vishay Semiconductors formerly General Semiconductor Schottky Diodes SOD-123 .022 0.55 Mounting Pad Layout Top View 0.094 (2.40) 0.055 (1.40) Features .006 (0.15) max. 0.055 (1.40) Dimensions in inches and (millimeters) .053 (1.35) max.
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BAT17W
OD-123
OT-23
BAT17,
OD-323
BAT17WS
10-May-02
vishay sod123
l7 marking code
BAT17
BAT17W
BAT17WS
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PDF
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GS9014
Abstract: GS9015
Text: GS9015 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistors • Complementary to GS9014
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GS9015
O-226AA
GS9014
100mA,
10-May-02
GS9014
GS9015
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PDF
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GS9012
Abstract: GS9013
Text: GS9012 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AFdriver stages and low power output stages such as
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GS9012
O-226AA
GS9013
500mA,
10-May-02
GS9012
GS9013
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MPSA13
Abstract: MPSA14 MMBTA14 MMBTA13
Text: MPSA13 and MPSA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector TO-226AA (TO-92) Base 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for
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MPSA13
MPSA14
O-226AA
OT-23
MMBTA13
MMBTA14
20K/box
MPSA13
MPSA14
MMBTA14
MMBTA13
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PDF
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2n7000
Abstract: No abstract text available
Text: 2N7000 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage
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2N7000
O-226AA
20K/box
10-May-02
2n7000
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Si4858DY
Abstract: No abstract text available
Text: \\\ SPICE Device Model Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4858DY
0-to-10V
10-May-02
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npn transistors,pnp transistors
Abstract: MMBTA56 MPSA06 MPSA56 vishay transistor
Text: MPSA56 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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MPSA56
O-226AA
MPSA06
OT-23
MMBTA56.
18-Jul-08
npn transistors,pnp transistors
MMBTA56
MPSA56
vishay transistor
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PDF
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transistor MPSA06
Abstract: MMBTA56 MPSA06 MPSA56
Text: MPSA56 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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MPSA56
O-226AA
MPSA06
OT-23
MMBTA56.
10-May-02
transistor MPSA06
MMBTA56
MPSA56
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PDF
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pin configuration transistor mps2222a
Abstract: MMBT2222A MPS2222A equivalent of transistor MMBT2222A
Text: MPS2222A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor NPN TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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MPS2222A
O-226AA
OT-23
MMBT2222A.
20K/box
10-May-02
pin configuration transistor mps2222a
MMBT2222A
MPS2222A
equivalent of transistor MMBT2222A
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PDF
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MMBTA06
Abstract: MPSA06 MPSA56 transistor MPSA56
Text: MPSA06 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor NPN TO-226AA (TO-92) Features 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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MPSA06
O-226AA
MPSA56
OT-23
MMBTA06.
100mA,
100mA
100MHz
10-May-02
MMBTA06
MPSA06
transistor MPSA56
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PDF
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Untitled
Abstract: No abstract text available
Text: BS870 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-236AB (SOT-23) 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Gate 2. Source 3. Drain .007 (0.175) .005 (0.125)
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BS870
O-236AB
OT-23)
OT-23
10-May-02
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PDF
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BS108
Abstract: No abstract text available
Text: BS108 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. ∅ 0.022 (0.55) 0.098 (2.5) Features • • • • • • • • • • • High breakdown voltage
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BS108
O-226AA
10-May-02
BS108
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PDF
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marking code 1p
Abstract: MMBT2222A MPS2222A mps2222a transistor
Text: MMBT2222A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0.175)
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MMBT2222A
O-236AB
OT-23)
10-May-02
marking code 1p
MMBT2222A
MPS2222A
mps2222a transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS GP 00 ALL RIGHTS RESERVED. LTR DESCRIPTION M DATE OWN JG cc 10MAY02 REVISED PER EC 0 S 1 3 - 0 0 9 5 - 0 2 APVD 0 2 .3 9 + 0 .0 8 2 PLC
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OCR Scan
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10MAY02
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED 19 BY AMP IN COR POR ATE D. FOR ALL PUBLICATION RIGHTS 2 19 LOC RE SE R VE D . AF DI ST REVISIONS 50 L TR DESCRIPTION REL PER 0G3A-0448-02 DATE DWN APVD 26JUL02 JR PD D 1 CONTINUOUS STRIP
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26JUL02
0G3A-0448-02
63008E
DRAWING1217835-1
10MAY02
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