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    GE200NB60S

    Abstract: STGE200NB60S Date Code Marking STMicroelectronics diode icl 707
    Text: STGE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGE200NB60S • ■ ■ ■ ■ VCES 600 V VCE sat (typ.) IC TC 1.2 V 1.3 V 150 A 200 A 100°C 25°C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		PDF STGE200NB60S GE200NB60S STGE200NB60S Date Code Marking STMicroelectronics diode icl 707

    Untitled

    Abstract: No abstract text available
    Text: 4 COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC — »— DIST CM 00 REVISIONS LTR w D ’A/C BUSINESS GROUP’ 3323 1 7 7 -3 4 ’ NICK GANNON’ B A YES YES YES YES YES YES YES YES YES YES YES YES YES YES


    OCR Scan     		PDF 10JUN2003 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 00 LTR DESCRIPTION Y D C B A DATE REV PER ECO—07—003708 DWN 21F E B 07 APVD KW DB D YES YES YES YES


    OCR Scan     		PDF 3-64044ON. 10JUN2003 31MAR2000