Untitled
Abstract: No abstract text available
Text: CXT5551 SOT-89 Transistor NPN 1. BASE 1 2. COLLECTOR SOT-89 3. EMITTER Features 4.6 4.4 1.8 1.4 1.6 1.4 B Switching and amplification in high voltage 2.6 4.25 2.4 3.75 Applications such as telephony 0.8 MIN Low current(max. 600mA) 0.44 0.37 High voltage(max.180v)
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CXT5551
OT-89
OT-89
600mA)
100MHz
10Hzto15
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RS10100
Abstract: CZT5401
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT5401 SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.6 A Collector-base voltage
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OT-223
CZT5401
OT-223
-100V
-10mA
-50mA
-10mA
-50mA
RS10100
CZT5401
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CZT5401
Abstract: No abstract text available
Text: CZT5401 CZT5401 SOT-223 TRANSISTOR PNP FEATURES Power dissipation 1. BASE PCM: 1 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current A ICM: -0.6 Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃
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CZT5401
OT-223
-100V
-10mA
-50mA
-10mA
-50mA
CZT5401
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CZT5551
Abstract: No abstract text available
Text: CZT5551 CZT5551 SOT-223 TRANSISTOR NPN FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃
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CZT5551
OT-223
-10mA
100MHz
10Hzto15
CZT5551
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switching and amplification
Abstract: CXT5551
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors CXT5551 SOT-89 TRANSISTOR NPN FEATURES Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180v)
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OT-89
CXT5551
OT-89
600mA)
100MHz
10Hzto15
switching and amplification
CXT5551
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5551 SOT-89-3L TRANSISTOR NPN FEATURES Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)
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OT-89-3L
CXT5551
OT-89-3L
600mA)
100MHz
10Hzto15
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT5551 SOT-223 TRANSISTOR NPN FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: 0.6 A Collector-base voltage
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OT-223
CZT5551
OT-223
-10mA
100MHz
10Hzto15
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors CXT5551 SOT-89 TRANSISTOR NPN FEATURES 1 Switching and amplification in high voltage z 1. BASE Applications such as telephony z Low current(max. 600mA) z High voltage(max.180v)
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OT-89
CXT5551
OT-89
600mA)
100MHz
10Hzto15
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BSS67
Abstract: No abstract text available
Text: BSS66 SOT23 NPN SILICON PLANAR M E D IU M POW ER SW ITCHING T R A N SIST O R S ISSUE 2 - SEPTEMBER 1995 Q PARTMARKING DETAILS — BSS66 BSS67 - RQQ«7 M6 M7 BSS66R- M8 BSS67R- M9 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE
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OCR Scan
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BSS66
BSS67
BSS66
BSS66R-
BSS67R-
Emitter100m
BSS67
100kHz
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Untitled
Abstract: No abstract text available
Text: BSS69 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS R Q Q 7 ÌÌ ISSU E 2 - SEPTEM BER 1995 Q PARTMARKING DETAILS — BSS69 BSS70 BSS69RBSS70R- L2 L3 L6 L7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V V CBO
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OCR Scan
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BSS69
BSS70
BSS69RBSS70RL2
BSS69
-50mA*
-100mA*
BSS70
100MHz
100kHz
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