Untitled
Abstract: No abstract text available
Text: F214 Rev 10FEB14 TM SCRES–G–00.25–D SCPE–G–02.00–S SCPE, SCRES SERIES IP68 SEALED ETHERNET SOCKET & PLUG Mates with: SCRES SPECIFICATIONS For complete specifications see www.samtec.com?SCPE Insulator Material: Polycarbonate Contact Material:
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10FEB14)
DCA-17-01
SCPPA-17-01
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - 2 3 1 20 LOC REVISIONS DIST HM ALL RIGHTS RESERVED. 00 P LTR DESCRIPTION F G H DATE DWN APVD REV ECO-11-000935 14JAN2011 LH RA REV ECO-11-010380 20MAY2011 LH RA 10FEB14 JB RA REV PER ECO-14-001886
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ECO-11-000935
ECO-11-010380
14JAN2011
20MAY2011
10FEB14
ECO-14-001886
01OCT96
26SEP96
10SEP96
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Untitled
Abstract: No abstract text available
Text: SEAF–20–05.0–S–10–2–A–K–TR F214 Rev 10FEB14 SEAF–30–05.0–S–08–2–A–K–TR (1,27 mm) .050" SEAF SERIES SEAF–30–05.0–S–08–2–A–LP–K–TR HIGH SPEED/HIGH DENSITY OPEN PIN FIELD SPECIFICATIONS For complete specifications and
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10FEB14)
50x10
40x10
30x10
20x10
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Untitled
Abstract: No abstract text available
Text: F214 Rev 10FEB14 ISDF–07–D–M TSDF–10–D–S SYSTEM ISDF–10–D–S (1,27 mm) .050" ISDF, CC03R, TFM SERIES DISCRETE WIRE COMPONENTS & TOOLING SPECIFICATIONS For complete specifications see www.samtec.com?ISDF or www.samtec.com?CC03R RECOGNITIONS
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10FEB14)
CC03R,
CC03R
CAT-MA-203-2830-XX-01
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Abstract: No abstract text available
Text: VSMY1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES • Package type: Surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified
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VSMY1940X01
AEC-Q101
J-STD-020
VSMY1940X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () MAX. ID (A) a 0.177 at VGS = 10 V 7.7 150 0.185 at VGS = 7.5 V 7.6 0.250 at VGS = 6 V 4 Qg (TYP.) 4.3 nC S 4 • 100 % Rg and UIS tested • Material categorization:
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SiA446DJ
SC-70-6L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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40CPQ050
Abstract: No abstract text available
Text: VS-40CPQ0.0PbF Series, VS-40CPQ0.0-N3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES Base common cathode 2 • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-40CPQ0
O-247AC
-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
40CPQ050
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Untitled
Abstract: No abstract text available
Text: SiA432DJ www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A) b, c 0.0200 at VGS = 10 V 10.1 0.0240 at VGS = 4.5 V 9.2 VDS (V) 30 • TrenchFET power MOSFET • Thermally enhanced PowerPAK® SC-70 package
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SiA432DJ
SC-70
SC-70-6L
SiA432DJ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TSOP753.W, TSOP755.W www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Compatible also with short burst dataformats • Supply voltage: 2.5 V to 5.5 V
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TSOP753.
TSOP755.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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