10E2 diode
Abstract: 10E2
Text: ｓ DIODE 10E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage
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10E2 diode
Abstract: 10E2
Text: ｓ DIODE 10E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage
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10E2 diode
Abstract: 10E2
Text: Type：10E2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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10E2 diode
Abstract: 10E2
Text: Type：10E2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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C5257
Abstract: No abstract text available
Text: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution
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IKW30N100T
12345646557889A68A6B
C5257
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU2507DX
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10E-2
Abstract: BU2507DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU2507DF
10E-2
BU2507DF
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10E-2
Abstract: BU1507DX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU1507DX
10E-2
BU1507DX
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BU2507AF
Abstract: 10E-2
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
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BU2507AF
BU2507AF
10E-2
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BU1507AX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
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BU1507AX
BU1507AX
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BU2507AX
Abstract: 10E-2
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
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BU2507AX
BU2507AX
10E-2
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10E2 diode
Abstract: 10E8 10e1
Text: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /100 ~ 8 00 v FEATURES o o o ° o M iniature Size Low Forward Voltage Drop Low Reverse Leakage Current High Surge Capability 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS ' " \ > Type 10E1 10E4 10E2
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10E4-10E8
10E2 diode
10E8
10e1
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10E2
Abstract: 10E1 10E4 10E6 10E8 10E2 diode
Text: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /10 0 ~ 8 0 0 v « FEATURES ° Miniature Size o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability ° 52mm Inside Tape Spacing Package Available 2.7 .106 DIA 2.3{.091) 0.9(.035) DIA 0.7(.027)
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IA/100
-10E2
A10E8
bi5123
0001bb3
10E2
10E1
10E4
10E6
10E8
10E2 diode
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10E2
Abstract: 10e1 diode 10E1 LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 10E4 10E6 10E8 10E4-10E8 10E2 diode
Text: SILICON RECTIFIER DIODE ia/100~800 v ioei ~ ioe8 FEATURES o Miniature Size 2 7 U 0 6 D IA 2.3 .091) o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability 0.9(.035) DIA 0.7(.027) ° 52mm Inside Tape Spacing Package Available 27( 1.06)
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A/100
bbl51i23
10E2
10e1 diode
10E1
LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
10E4
10E6
10E8
10E4-10E8
10E2 diode
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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Untitled
Abstract: No abstract text available
Text: TO SHIBA A D V A N CE INFORM ATION TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1KS77FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX16827FT
Tf74UfY1KS77FT
20-BIT
TC74VCX16827FT
10-bit
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CC-009
Abstract: No abstract text available
Text: E>Æm u JT 74ALVCH16827 20-bit buffer/line driver, non-inverting 3-State 1998 Jul 27 Product specification IC24 Data Handbook Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification 20-bit buffer/line driver, non-inverting (3-State)
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74ALVCH16827
20-bit
CC-009
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SAA1064 APPLICATION NOTE
Abstract: PCF8577 Z80 i2c INTERFACING
Text: Philips Comportente-SigneHcs Document Application Note Author Dale AN425 Interfacing the P C D 8584 l2C-bus controller April 1990 to 80C51 family microcontrollers Application Specific Product DESCRIPTION This application note shows how to use the P C D 8 5 8 4 PC-bus controller with
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AN425
80C51
80C31
PCD8584
ASM51
7D483E
6E4B67
SAA1064 APPLICATION NOTE
PCF8577
Z80 i2c INTERFACING
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS, 5 VOLTTOLERANT I/O IDT74LVC16540A ADVANCE INFORMATION DESCRIPTION: FEATURES: - Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
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16-BIT
IDT74LVC16540A
250ps
MIL-STD-883,
200pF,
635mm
-400C
LVC16540A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX162827FT
20-BIT
TC74VCX162827FT
20bit
10-bit
lCC/20
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX16827FT
20-BIT
TC74VCX16827FT
10-bit
lCC/20
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX16827FT
20-BIT
TC74VCX16827FT
10-bit
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74ALVCH16825
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 18-bit buffer/driver 3-State 74ALVCH16825 FEATURES PIN CONFIGURATION • Wide supply voltage range of 1.2V to 3.6V • Complies with JEDEC standard no. 8-1A. [7 56] tv , [7 5S| tA0 •tv, [T 54] 1At GND [T 53]
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18-bit
74ALVCH16825
SY00906
74ALVCH16825
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10E1
Abstract: 10E2 20E1 20E2 TC74VCX162827FT 10e2 equivalent
Text: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX162827FT
20-BIT
TC74VCX162827FT
10-bit
10-bit
TSSOP56-P-OQ61
10E1
10E2
20E1
20E2
10e2 equivalent
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